• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.186-189
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• 2003

The role of excess Pb about the crystallization behavior and electrical properties in b(Zr$\sub$0.52/Ti$\sub$0.48/)O3(PZT) thin films has not been precisely defined. In this work, the effect of excess Pb content on the ferroelectric properties of these films was investigated. To analyze the effect, PZT films containing various amounts of excess Pb were Prepared. PZT thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method and then they were crystallized by rapid thermal annealing (RTA). The experiment showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (111) and no pyrochlore phase was observed. As higher excess Pb was included, the films showed that value of leakage current shift from 2.03${\times}$10$\^$-6/ to 6.63 ${\times}$ 10$\^$-8/A/cm$^2$ at 100kV/cm, and value of remanent polarization shift from 8.587 ${\mu}$C /cm$^2$ to 4.256 ${\mu}$C/ cm$^2$. Electrical properties of PZT thin film affected by Pb excess content of target were explained to be caused of defect among space charges and defect grain boundaries.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.7
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• pp.514-520
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• 1999

Ferroelectric PZT(30/70)/PZT(70/30) heterolayered thin films were fabricated by spin-coating method on the $Pt/Ti/SiO_2Si$ substrate alternately using(30/70) and PZT(70/30) alkoxide solutions prepared by sol-coating method. The coating and heating procedure was repeated six times to form PZT heterolayered films, and thickness of the film obtained by one-times drying/sintering process was about 40-50 nm. All PZT heterolayered films, showed dense and homogeneous structure without the presence of rosette sturctrue. The relative dielectric constant, remanent polarization and leakage current density of PZT heterolayered films were superior to those of single composition PZT(30/70) and PZT(70/30) films, and those values for the PZT-6 film were 975, $21 \muC/cm^2\; and\; 8\times10^{-9}\; A/cm^2$, respectively. And the PZT-6 heterolayered film showed fairly good fatigue characteristics of remanent polarization and coercive field after application of $10^8$ switching cycles.

• Current Photovoltaic Research
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• v.2 no.1
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• pp.18-27
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• 2014

Dye-sensitized solar cells (DSSCs), developed two decades ago, are considered to be an attractive technology among various photovoltaic devices because of their low cost, accessible dye chemistry, ease of fabrication, high power conversion efficiency, and environmentally friendly nature. A typical DSSCs consists of a dye-coated $TiO_2$ photoanode, a redox electrolyte, and a platinum (Pt)-coated fluorine-doped tin oxide (FTO) counter electrode. Among them, redox electrolytes have proven to be extremely important in improving the performance of DSSCs. Due to many drawbacks of iodide electrolytes, many research groups have paid more attention to seeking other alternative electrolyte systems. With regard to this, one-electron outer sphere redox shuttles based on cobalt complexes have shown promising results: In 2014, porphyrin dye (SM315) with the cobalt (II/III) redox couple exhibited a power conversion efficiency of 13% in DSSCs. In this review, we will provide an overview and perspectives of cobalt redox electrolytes in DSSCs.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.40-44
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• 2000

Metal-ferroelectric-insulator-semoiconductor field effect transistor (MFISFETs) were fabricated using CMOS processes. The Pt/SBT/NO combined layers were etched for forming a conformal gate by using Ti/Cr metal masks and a two step etching method, By the method, we were able to fabricate a small-sized gate with the dimension of $16/4{\mu}textrm{m}$ in the width/length of gate. It has been chosen the non-self aligned source and drain implantation process, We have deposited inter-layer dielectrics(ILD) by low pressure chemical vapor deposition(LPCVD) at $380^{circ}C$ after etching the gate structure and the threshold voltage of p-channel MFISFETs were about 1.0 and -2.1V, respectively. It was also observed that the current difference between the $I_{ON}$(on current) and $I_{OFF}$(off current) that is very important in sensing margin, is more that 100 times in $I_{D}-V_{G}$ hysteresis curve.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.177-178
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• 2007

본 연구에서는 MIM (Metal-Insulator-Metal) capacitor의 유전 물질로 사용되는 $Ba_xTi_yO_z$(BTO) 박막의 식각 특성을 고찰하였다. $Cl_2$/Ar 혼합가스를 이용하여 Inductively Coupled Plasma(ICP)에서 BTO 박막을 식각하였고, 식각된 BTO박막의 표면을 X-ray photoelectron spectroscopy(XPS) 분석하였다. BTO박막의 식각 속도는 Ar이 80%인 식각 조건에서 31.7nm/min의 식각 속도를 추출하였고, 동시에 Pt박막에 대한 높은 선택비를 얻었다. X-ray photoelectron spectroscopy (XPS) 분석 결과로부터 표면 반응을 조사하여, 식각 기구를 고찰하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.171-171
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• 2007

Dysprosium-doped bismuth titanate (BDT) thin films were successfully deposited on Pt(111)/Ti/$SiO_2$/Si(100) substrates by liquid delivery MOCVD process and their structural and ferroelectric properties were characterized. Fabricated BDT thin films were found to be random orientations, which were confirmed by X-ray diffraction experiment and scanning electron microscope analysis. The crystallinity of the BDT films was improved and the average grain size increased as the crystallization temperature increased from 600 to $720^{\circ}C$ at an interval of $40^{\circ}C$. The BDT thin film annealed at $720^{\circ}C$ showed a large remanent polarization (2Pr) of $52.27\;{\mu}C/cm^2$ at an applied voltage of 5V. The BDT thin film exhibits a good fatigue resistance up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied pulse of ${\pm}5\;V$. These results indicate that the randomly oriented BDT thin film is a promising candidate among ferroelectric materials useti비 in lead-free nonvolatile ferroelectric random access memory applications.

• Bulletin of the Korean Chemical Society
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• v.30 no.10
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• pp.2329-2337
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• 2009

Three heteroleptic ruthenium sensitizers, Ru(L)($L^1)(NCS)_2$ [L = 4,4'-dicarboxylic acid-2,2'-bipyridine, Ru-T1: $L^1$ = (E)-2-(4'-methyl-2,2'-bipyridin-4-yl)-3-(thiophen-2-yl)acrylonitrile, Ru-T2: $L^2$ = (E)-3-(5'-hexyl-2,2'-bithiophen-5- yl)-2-(4'-methyl-2,2'-bipyridin-4-yl)acrylonitrile, and Ru-T3: $L^3$ = (E)-3-(5"-hexyl-2,2':5',2"-terthiophen-5-yl)-2- (4'-methyl-2,2'-bipyridin-4-yl)acrylonitrile)], were synthesized and used as photosensitizers in nanocrystalline dyesensitized solar cells (DSSCs). The introduction of the 3-(5-hexyloligothiophen-5-yl)acrylonitrile group increased the conjugation length of the bipyridine donor ligand and thus improved their molar absorption coefficient and light harvesting efficiency. DSSCs with the configuration of Sn$O_2$: F/Ti$O_2$/ruthenium dye/liquid electrolyte/Pt devices were fabricated using these Ru-$T1{\sim}T3$ as a photosensitizers. Among the devices, the DSSCs composed of Ru-T2 exhibited highest power conversion efficiency (PCE) of 2.84% under AM 1.5 G illumination (100 mW/$cm^2$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.190-190
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• 2008

자연적으로 발생되는 파도, 비, 우박 등과 철도, 차량 및 엘리베이터 등과 같은 인위적인 설치, 이동에 의해 발생되는 진동에너지는 우리 일상생활에서 가장 흔하게 발생할 수 있는 에너지원인데, 이러한 진동에너지는 압전 소재를 이용하여 재생 가능하여 최근에는 이에 대한 연구가 활발히 진행되어 왔다. 예를 들면, 미국의 MIT에서는 인간이 걸을 때 신발에 가해지는 압력을 이용하여 전력을 발생시키는 연구를 진행하여 2.9 mW의 전력을 얻었다. 특히 이러한 기술은 인간의 걷기 운동 등과 같은 일상적인 동작으로 필요한 전력을 얻을 수 있고, 세라믹 소자를 이용하기 때문에 전자노이즈가 발생되지 않을 뿐 아니라 반영구적으로 사용할 수가 있어서, 소형 전자기기 등에 서 기존 이차전지를 대체 또는 보완 할 수 있는 기술로 검토되고 있다. PZT계 세라믹스는 높은 유전상수와 우수한 압전특성으로 이러한 압전발전 분야에서 가장 널리 사용되어지고 있다. 하지만 에너지 효율을 높이기 위하여 적층 구조의 제작 시 구조적 특성상 내부전극이 도포된 상태에서 동시 소결이 필요한데, $1000^{\circ}C$ 이상의 높은 소결온도 때문에 소재 원가가 낮은 Ag전극 대신 값비싼 Pd나 pt가 다량 함유된 Ag/Pd, Ag/Pt 전극이 사용되고 있어 경제성이 떨어지는 단점을 갖게 된다. 순수 Ag 전극을 사용하거나 Ag의 비율이 높은 내부전극을 사용하기 위해서는 $900^{\circ}C$ 이하에서 소결되고 우수한 전기적 특성을 보이는 압전 세라믹스 소재를 개발 하는 것이 필요하다. 따라서 본 연구에서는 압전특성이 우수한 $(Pb_{1-x}Cd_x)(Ni_{1/3}Nb_{2/3})_{0.25}(Zr_{0.35}/Ti_{0.4})O_3$ 계의 조성을 설계하고, 소결온도를 낮추기 위해서 2 단계 하소법을 이용하였다. 또한 $MnCO_3$, $SiO_2$, $Pb_3O_4$ 등을 소랑 첨가하여 액상 소걸 특성을 부여하여 소결 온도를 감소시키려는 시도도 하였다. 소결체의 전체적인 제조 공정은 일반적인 벌크 세라믹의 소걸 공정을 따랐다. 최종 소결된 시편을 XRD분석을 통하여 상을 확인하였고 SEM을 이용하여 미세조직을 관찰 하였다. 전기적 특성을 평가하기 위하여 두께를 1mm로 연마한 시편에 Ag 전극을 도포하여 $650^{\circ}C$ 에서 열처리한 후, 분극처리 하였다. Impedance analyzer를 이용하여 압전 특성 (전기기계결합계수 및 기계적품질계수)을 측정 하였고, 압전전하상수는 $d_{33}$-meter로 측정하였다. 본 연구에서는 압전체에 가해지는 하중의 크기, 시편의 크기, 하중을 가하는 방법, 에너지 저장회로의 최적화 등을 다양하게 시도하면서 에너지 변환 및 저장 효율을 평가하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.24-24
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• 1998

반도체장비를 포함하는 초고진공장비의 園훌化가 급속히 그리고 절실히 요구되고 있는 것이 현실정이다. 當面해서 실현할 국산진공장비의 대상은 廣範圍하다. 즉, 각종 진공 pump ( (rotary, dry, diffusion, cryo, ion, turbo melecular pump), 진공 chamber, 진공 line, gate valve 를 위 시 한 진공 V머ve, flange, gasket, fl않d야lU, mainpulater 퉁 진공 部品이 다. 진공계 의 핵심 은 適切하고 優良한 진공재료의 선태파 사용이다. 진공장비는 사용자가 원하는 진공도를 원하 는 시간 동안 륨空度를 유지해 주어야 한다. 진공재료 선태의 기준사항은:(1) 기체의 透過성 (2) 薰했훌 (3) 혔體放出특성 - -outgassing과 degassing- (4) 機械的 량훌度 (5) 온도 의존성 (6) 化學톡성 (7) 加I성 및 鎔接 성 (8) 課電특성 (9) 磁氣특성 (10) 高速함子 및 放射線 특성 (11) 經濟성 및 調達생 둥이 다. 우량한 초고진공계재료는 풍부하게 개발되어 왔고, 또 新材料들이 개발되고 있다. 여기에서는 주로 초고진공 내지는 극고진공계의 構造材料, 機能材料, 部品材料 일반파 몇가지 신재료의 특 성에 관해서 記述한다. M Mild SteeHSAE, 1112, 1010, 1020, 1022, etc)., S Stainless SteeHAlSI, 304, 304L, 310, 316, 321, 347): 구조재료, chamber, fl하1ges A Aluminum과 Alloys (1060, 1100, 2014, 4032, 6(뻐1): 구조재료, chamber, flanges, gaskets A AI, Al 떠loy는 SS에 代替하는 역 할올 시 작하고 있다. C Copper, Copper Alloys(C11$\alpha$)0, C26800, C61400, Cl7200): 내장인자, gasket, cryopanel, tubing T Titanium, Ziriconium, Haf띠um 및 Alloys: 특히 Ti은 10n pump 용 getter material 이 외 에 U UHV,XHV용 chamber계로서 관심올 끌고 있다. N Nickel, Nickel Alloys (200, 204, 211, monel, nichrome): 부식 방지 , 전자장치 , 자기 장치 귀 금속(Ag, Au, Pt, Pd, Rh, Ir, Os, Ru): 보조부품, gasket, filament, coating, thermocouple, 접 합부위 T TiC, SiC, zrC, HfC, TaC 둥의 탄화물과, BN, TiN, AlN 동의 질화물, 붕화물이 둥장하고 었 다. 유리: Soda Lime, Borosilicate, Potash Soda Lead: View Port, Chamber envelope C Ceramics: AlZ03, BeO, MgO, zrOz, SiOz, MgOzSiOz, 3Alz032SiOz, Z$textsc{k}$hSiOz S상N4: e electrical, thermal insulators, crucibles, boats, single crystals, sepctr려 windows 저자는 최근 저자들이 발견한 Zr-Ti-Cu-Ni-Be amorphous alloys coated cham뾰r가 radiation p proof로 이용될 수 있는 사실을 점검하고 었다 .. Z.Y. Hua 들은 Cs3Sb를 새로운 photocathode 재료로 보고하고 있다.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.222-225
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• 2011

Lead zirconate titanate (PZT) films were fabricated on Pt/Ti/$SiO_2$/Si substrate by the sol-gel method using a sol containing poly(N-vinylpyrrolidone) (PVP). PVP in alkoxide solutions can suppress the condensation reaction in gel films during heat treatment, and increase the viscosity of alkoxide solutions. Single-phase PZT films as thick as 1 ${\mu}m$ were deposited by repetitive coating with successive third-step heat treatments at 150$^{\circ}C$, 350$^{\circ}C$ and 650$^{\circ}C$. After heat treatment, the films were crack free, and optically transparent. As a result, we demonstrated a PZT film with a PVP molar ratio of 0.5, which has a permittivity of 734, a dielectric loss of 0.042, a $P_r$ of 40.5 ${\mu}C/cm^2$ and an $E_c$ of 156 kV/cm.