• Korean Journal of Materials Research
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• v.23 no.6
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• pp.329-333
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• 2013

The structural phase transformations of $0.7Pb(Mg_{1/3}Nb_{2/3})O_3-0.3PbTiO_3$ (PMN-0.3PT) were studied using high resolution x-ray diffraction (HRXRD) as a function of temperature and electric field. A phase transformational sequence of cubic (C)${\rightarrow}$tetragonal (T)${\rightarrow}$rhombohedral (R) phase was observed in zero-field-cooled conditions; and a $C{\rightarrow}T{\rightarrow}$monoclinic $(M_C){\rightarrow}$ monoclinic ($M_A$) phase was observed in the field-cooled conditions. The transformation of T to $M_A$ phase was realized through an intermediate $M_C$ phase. The results also represent conclusive and direct evidence of a $M_C$ to $M_A$ phase transformation in field-cooled conditions. Beginning from the zero-field-cooled condition, a $R{\rightarrow}M_A{\rightarrow}M_C{\rightarrow}T$ phase transformational sequence was found with an increasing electric field at a fixed temperature. Upon removal of the field, the $M_A$ phase was stable at room temperature. With increasing the field, the transformation temperature from T to $M_C$ and from $M_C$ to $M_A$ phase decreased, and the phase stability ranges of both T and $M_C$ phases increased. Upon removal of the field, the phase transformation from R to $M_A$ phase was irreversible, but from $M_A$ to $M_C$ was reversible, which means that $M_A$ is the dominant phase under the electric field. In the M phase region, the results confirmed that lattice parameters and tilt angles were weakly temperature dependent over the range of investigated temperatures.

• Korean Journal of Materials Research
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• v.21 no.7
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• pp.391-395
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• 2011

The structure and dielectric properties of poled <001>-oriented 0.7Pb($Mg_{1/3}Nb_{2/3})O_3-0.3PbTiO_3$ (PMN-0.3PT) crystals have been investigated for orientations both parallel and perpendicular to the [001] poling direction. An electric field induced monoclinic phase was observed for the initial poled sample. The phase remained stable after the field was removed. A quite different temperature dependence of dielectric constant has been observed between heating and cooling due to an irreversible phase transformation. The results of mesh scans and temperature dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a single domain tetragonal phase at 370K and to a paraelectric cubic phase at 405K upon heating. However, upon subsequent cooling from the unpoled state, the cubic phase changes to a poly domain tetragonal phase and to a rhombohedral phase. In the ferroelectric tetragonal phase with a single domain state, the dielectric constant measured perpendicular to the poling direction was dramatically higher than that of the parallel direction. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believed to be related to dielectric softening close to the morphotropic phase boundary and at the phase transition temperature.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.20-25
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• 1997

In this study, piezoelectric actuator samples were fabricated using 0.375PMN-0.37OPT-0.255PZ system ceramics with Barium substitution and the strain properties of them were investigated. Dielectric constant of the specimens increased with the increase of Ba content up to 5mol% and decreased with futher addition of Ba. The largest piezoelectric coefficient and electromechanical coupling coefficient were observed at the sintering temperature of 1250'C and Barium content of 5mol%. The characteristics of strain hysteresis was found largely with varing the sintering temperature on the single round type, and the strain is proportional to piezoelectric coefficient.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.1
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• pp.245-248
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• 2012

In this paper, the optimized growing conditions of PZT thin films on low temperature co-fired ceramics (LTCC) substrates are studied. The LTCC technology is an emerging one in the fields of mesoscale (from 10 um to several hundred um) sensor and actuator against silicon based technology due to low cost, high yield, easy manufacturing of 3 dimensional structure, etc. The LTCC substrates with thickness of 400 um are fabricated by laminating 100 um green sheets using commercial power (NEG, MLS 22C). The Pt/Ti bottom electrodes are deposited on the LTCC substrates, then the growing conditions of PZT thin films using rf magnetron sputtering method are studied. The growing conditions are tested under various rf power and gas ratio of oxygen to argon. And the crystallization and ingredient of PZT films are analyzed by X-ray diffraction method (XRD) and energy dispersive spectroscopy (EDS). The optimized growing conditions of PZT thin films are rf power of 125W, Ar/O2 gas ratio of 15:5.

• Applied Chemistry for Engineering
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• v.17 no.5
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• pp.471-475
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• 2006

$VO_x$ thin films with the thickness of 450 nm were prepared on a $Pt/Ti/SiO_{2}/Si$ substrate at room temperature by a reactive radio frequency (rf) magnetron sputtering method. The deposition rates of $VO_x$ thin films were investigated as a function of $O_{2}$ concentration and rf power. As the $O_{2}$ concentration in a $O_{2}/Ar$ mixture increased, the deposition rate decreased. However, the deposition rate increased with increasing rf power. The deposited $VO_x$ thin films were annealed at $450^{\circ}C$ for 2, 4, and 6 h in $O_{2}$ and $N_{2}$ ambient. After annealing, the phase changes of $VO_x$ thin films were investigated using X-ray diffraction analysis. The plane and cross-sectional views of $VO_x$ thin films before and after annealing were observed by field emission scanning electron microscopy. The metal-insulator transition (MIT) properties of $VO_x$ thin films were measured using current-voltage measurement. The excellent MIT properties were observed in $VO_x$ thin films annealed in $O_{2}$ ambient.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.121-122
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• 2008

The films of the vanadium tungsten oxide, $V_{1.85}W_{0.15}O_5$, were grown on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the thin film thickness. As increasing of $V_{1.85}W_{0.15}O_5$ thickness, the grain size, morphology, and crystallinity increased. The dielectric constants of $V_{1.85}W_{0.15}O_5$ thin films deposited at 150nm were 71.11, with a dielectric loss of 0.015, respectively. Also, The $V_{1.85}W_{0.15}O_5$ thin films showed good TCR values of -3.45%/K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.18-21
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• 2014

Because the Pb-based piezoelectric materials showed problems such as an environmental pollution. lead-free $O_3$ materials were studied in the present study. The $O_3$ thin films were deposited at $640^{\circ}C$ on $Pt/Ti/SiO_2$ substrate by pulsed laser deposition (PLD) and were annealed for 5 min at $750^{\circ}C$ using rapid thermal annealing (RTA) in nitrogen atmosphere. Samples annealed at $750^{\circ}C$ showed a smooth morphology and an improvement of the dielectric and leakage properties, as compared with as-grown samples. However, electrical properties of the $O_3$ thin films obtained in the present study should be improved for piezoelectric applications.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.715-723
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• 2006

Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.190-194
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• 2003

Dielectric thin films of (P $b_{0.72}$,L $a_{0.28}$) $Ti_{0.93}$ $O_3$ (PLT(28)) have been deposited on Pt(111)/Ti/ $SiO_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition Processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. We have tried to form the film by a two-step deposition process In order to improve electrical property. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film and to reduce the leakage current characteristics. Structural properties and electrical properties including dielectric constant, ferroelectric characteristics, and leakage current of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step Process including pre-annealing treatment has a strongly(111) orientation. However, the films deposited by using single -step process with hydrogen annealing process show the smallest grain size. The film deposited by using two-step process including pre-annealing treatment shows the leakage current density of below 10$^{-7}$ A/c $m^2$ for the field of smaller than 100 kV/cm. However, the films deposited by using single-step process with hydrogen annealing process and pre-annealing process show worse leakage current density than the film deposited by using two-step process including pre-annealing treatment.tment.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1252-1253
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• 2008

The $V_{1.8}W_{0.2}O_5$ thin films deposited on $Pt/Ti/SiO_2/Si$ substrates by RF sputtering method with different $Ar/O_2$ ratio. The $V_{1.8}W_{0.2}O_5$ thin films were measured electrical and structural properties, fairly good Temperature coefficient of resistance(TCR). It was found that electrical and structural properties, TCR properties of thin films were strongly dependent upon the $Ar/O_2$ ratio. The dielectric constant of the $V_{1.8}W_{0.2}O_5$ thin films with 50/20 ratio were 93 with a dielectric loss of 0.535, respectively. Also, the TCR values of the $V_{1.8}W_{0.2}O_5$ thin films with 50/20 ratio were -3.15%/$^{\circ}C$.