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http://dx.doi.org/10.4313/JKEM.2014.27.1.18

Fabrication and Properties of ZnSnO3 Piezoelectric Films Deposited by a Pulsed Laser Deposition  

Park, Byeong-Ju (Department of Materials Engineering, Chungnam National University)
Yoon, Soon-Gil (Department of Materials Engineering, Chungnam National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.1, 2014 , pp. 18-21 More about this Journal
Abstract
Because the Pb-based piezoelectric materials showed problems such as an environmental pollution. lead-free $O_3$ materials were studied in the present study. The $O_3$ thin films were deposited at $640^{\circ}C$ on $Pt/Ti/SiO_2$ substrate by pulsed laser deposition (PLD) and were annealed for 5 min at $750^{\circ}C$ using rapid thermal annealing (RTA) in nitrogen atmosphere. Samples annealed at $750^{\circ}C$ showed a smooth morphology and an improvement of the dielectric and leakage properties, as compared with as-grown samples. However, electrical properties of the $O_3$ thin films obtained in the present study should be improved for piezoelectric applications.
Keywords
$ZnSnO_3$ thin film; Pulsed laser deposition; Rapid thermal annealing;
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