• Title/Summary/Keyword: Pt(111)

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Preparation and Electrical Properties of Ferroelectric $Bi_{3.3}Eu_{0.7}Ti_3O_{12}$ Thin Films for Memory Applications (강유전체 메모리용 $Bi_{3.3}Eu_{0.7}Ti_3O_{12}$ 박막의 증착과 전기적 특성)

  • Kang, Dong-Kyun;Park, Won-Tae;Kim, Byong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.39-40
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    • 2005
  • Ferroelectric Eu-substituted $Bi_4Ti_3O_{12}$ (BET) thin films with a thickness of 200 nm were deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrate by means of the liquid delivery MOCVD system and annealed at several temperatures in an oxygen atmosphere. At annealing temperature above $600^{\circ}C$, the microstructure of layered perovskite phase was observed. The remanent polarization of these films increased with increase in annealing temperature. The remanent polarization values ($2P_r$) of the BET thin films annealed at $720^{\circ}C$ were $37.71{\mu}C/cm^2$ at an applied voltage of 5 V.

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Dielectric Properties of the (Ba, Sr)$TiO_3$ Thin Films with deposition time (증착시간에 따른 (Ba, Sr)$TiO_3$ 박막의 유전특성)

  • Lee, Sang-Chul;Lim, Sung-Soo;Lee, Sung-Gap;Chung, Jang-Ho;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 1999.11d
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    • pp.845-847
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    • 1999
  • (Ba, Sr)$TiO_3$[BST] thin films were fabricated on Pt/$TiO_2/SiO_2$/Si substrate by RF sputtering. The structural and dielectric properties of the BST thin films were investigated with the deposition time. Increasing the deposition time from 20 min. to 60 min., second phases were decreased, and EST (111), (100), (200) peaks were increased. The relative dielectric constant and dielectric loss of the EST thin films with the thickness of 3000$\AA$ were 300 and 0.018, respectively at 1[kHz]. The relative dielectric constants was decreased and dielectric losses was increased as increasing the frequency.

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Synthesis of aerosol nanoparticles by spark discharge and applications

  • Park, Jaehong;Byeon, Jeong Hoon;Yoon, Ki Young;Park, Jae Hong;Hwang, Jungho
    • Particle and aerosol research
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    • v.5 no.3
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    • pp.111-122
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    • 2009
  • This paper reviews about synthesis of nanoparticles by spark discharge and applications. A method of catalytic activation with Pd and Pt aerosol nanoparticles produced by spark discharge was introduced. After annealing, the catalytically activated substrate placed into a solution for electroless silver deposition. The silver was then formed only on the activated regions of the substrate. Silver line patterns having a width of $18{\mu}m$ and a height of $1{\mu}m$ were created with the ability to be effectively reproduced. Antimicrobial nanoparticles such as silver were used for removal of bioaerosols. Silver nanoparticles deposited air filters such as ACF filters were evaluated by antimicrobial test.

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Growth of $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ thin film by pulsed laser deposition (펄스 레이저 증착법에 의한 $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ 박막의 증착)

  • Eun, Dong-Seog;Park, Jeong-Heum;Lee, Sang-Yeol;Park, Chang-Yub
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1236-1238
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    • 1997
  • 유전체 PLT(28) ($Pb_{0.72}La_{0.28}Ti_{0.93}O_3$) 박막을 레이저 어블레이션 기법으로 Pt/Ti/$SiO_3$/Si기판을 $500^{\circ}C{\sim}700^{\circ}C$까지 가열한 상태에서 $O_2$분위기에서 증착시켰다. 증착된 박막은 SEM, XRD 등의 구조적 분석을 통하여 $600^{\circ}C$이상에서 증착된 경우, (111)방향으로 우세하게 성장한, 결정성이 양호한 박막임을 확인하였다. 박막의 전기적 특성은, 증착 온도가 $650^{\circ}C$일 때 약 1400정도의 높은 비유전율을 얻었으며, 전하저장밀도는 100[KV/cm]에서 약 9[${\mu}C/cm^2$]이었다.

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Microstructure of the Oriented Hexagonal HoMnO3 Thin Films by PLD

  • Choi, Dong-Hyeok;Shim, In-Bo;Kouh, Tae-Joon;Kim, Chul-Sung
    • Journal of Magnetics
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    • v.12 no.4
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    • pp.141-143
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    • 2007
  • We have fabricated (0001) oriented hexagonal $HoMnO_3$ thin films with thickness of 300 nm using Pulsed Laser Deposition (PLD) technique on $Pt(111)/Ti/SiO_2/Si$ substrates. The XRD $\theta-2\theta$ pattern shows only (0002), (0004), and (0008) reflection of a hexagonal phase, and the full width at half maximum (FWHM) of (0004) peak is under $1.6^{\circ}$. The chemical state of Mn from XPS spectra of the films reveals the presence of $Mn^{3+}$ only. The temperature dependence of dielectric constant shows a weak anomaly at magnetic $N\acute{e}el$ temperature $(T_N)$, which is about 70 K.

Effects of heat treatment conditions on the crystallinity and electrical characteristics of co-supttered BST this films (열처리 조건이 BST 박막의 결정성과 전기적 특성에 미치는 영향)

  • Ju, Jae-Hyeon;Ju, Seung-Gi
    • Korean Journal of Materials Research
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    • v.5 no.5
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    • pp.518-524
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    • 1995
  • BST 박막을 Pt/Si$O_{2}$/Si 기판위에 co-sputtering 방법으로 형성할 때 열처리 조건이 BST 박막의 결정성과 전기적 특성에 미치는 영향에 관하여 연구하였다. BST 박막의 특성은 급속 열처리나 관상로 열처리과 같은 후열처리 온도보다 증착시의 기판온도에 따라서 민감하게 변화하였고, 기판 온도를 55$0^{\circ}C$로 하여 증착할대 Perovskite상이 가장 안정적으로 성장하여 유전율 1100, 유전손실계수 0.02로 우수한 유전특성을 나타내는 막을 형성할 수 있었다. BST 박막은 기판온도를 증가하면 정합에너지와 표면에너지를 최소로하는 (111) 방향으로 우선방위를 나타내었고 결정립의 조대화 현상으로 누설전류가 증가하였다.

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SPIN REORIENTATION TRANSIT10N OF ULTRATHIN Co FILMS ON ARTIFICIALLY ROUGHENED Pd(111) SINGLE CRYSTAL (블록 공중합체를 이용한 CoCrPt 나노점 배열의 자기적 성질 연구)

  • Jeong, Jong-Ryul;Park, Yong-Sung;Kim, Jong-Hyun;Lee, Jeong-Won;Shin, Sung-Chul
    • Proceedings of the Korean Magnestics Society Conference
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    • 2002.12a
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    • pp.78-79
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    • 2002
  • It is well known that surface and interface roughnesses greatly affect the magnetic properties such as magnetic domain structure, magnetization reversal, magnetoresistance, and spin reorientation transition (SRT) of ultrathin magnetic films. Therefore, recent studies focus on artificially roughened surface, since it could be possible to systematically understand the effect of roughness on the magnetic properties as well as to obtain the desirable magnetic properties by artificially creating the surface structure and morphology. (omitted)

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The specimen preparation for the high energy electron diffraction and reflection electron microscopy observation (고에너지 회절무늬 및 반사전자현미경 관찰을 위한 시편준비)

  • 김유택
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.4
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    • pp.543-551
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    • 1996
  • The use of reflection high energy electron diffraction and reflection electron microscopy technique has been increased with increasing number of studieds on surfaces of single crystals and epitaxial growth layers. Here, the speciment preparation techniques are summerized for these two techniques which are not so polular in the country. The panoramic reflection high energy electron diffraction maps have been completed and an example of Pt(111) surface was demonstrated.

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Microstructure and Dielectric Properties of (Ba,Sr)TiO$_3$ Thin Film with Thickness (박막 두께에 따른 (Ba,Sr)TiO$_3$박막의 구조 및 유전특성)

  • 이상철;임성수;정장호;이성갑;배선기;이영희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.121-124
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    • 1999
  • The (Ba,Sr)TiO$_3$[BST] thin film were fabricated on the Pt/Ti/SiO$_2$/Si substrate by RF sputtering technique. The structural properties of the BST thin films were investigated with deposition time and substrate temperature by XRD. In the case of the BST thin films which has the deposition thin of 20 min, second phases and BST (111) peaks were increased with increasing the temperature of substrate. The capacitance of the BST thin film (deposition time of 20 min.) was decreased with the substrate temperature and was 1500pF with applied voltage of 1V.

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Hydrogen Annealing effect on the dielectric properties of $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ thin film

  • Lee, Eun-Sun;Chung, Hyun-Woo;Lim, Sung-Hoon;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.41-43
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    • 2004
  • Dielectric thin films of $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ were deposited on $Pt(111)/Ti/SiO_2/Si$ substrates in situ by pulsed laser deposition(PLD) and annealed with different gases which are forming gas and oxygen gas, respectively. The diffusion of hydrogen into the ferroelectric film was caused by annealing process and resulted in the destruction of polarization. The dielectric properties of forming gas annealed PLT thin films, which are dielectric constant, ferroelectric characteristic, and leakage current characteristics, were degraded

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