Preparation and Electrical Properties of Ferroelectric $Bi_{3.3}Eu_{0.7}Ti_3O_{12}$ Thin Films for Memory Applications

강유전체 메모리용 $Bi_{3.3}Eu_{0.7}Ti_3O_{12}$ 박막의 증착과 전기적 특성

Ferroelectric Eu-substituted $Bi_4Ti_3O_{12}$ (BET) thin films with a thickness of 200 nm were deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrate by means of the liquid delivery MOCVD system and annealed at several temperatures in an oxygen atmosphere. At annealing temperature above $600^{\circ}C$, the microstructure of layered perovskite phase was observed. The remanent polarization of these films increased with increase in annealing temperature. The remanent polarization values ($2P_r$) of the BET thin films annealed at $720^{\circ}C$ were $37.71{\mu}C/cm^2$ at an applied voltage of 5 V.