• JSTS:Journal of Semiconductor Technology and Science
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• 제2권1호
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• pp.59-69
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• 2002

A semi-analytical model based on exact numerical analysis of the 2DEG channel in pseudo-morphic HEMT (PMHEMT) is presented. The exactness of the model stems from solving both Schrodinger's wave equation and Poisson's equation simultaneously and self-consistently. The analytical modeling of the device terminal characteristics in relation to the charge control model has allowed a best fit with the geometrical and structural parameters of the device. The numerically obtained data for the charge control of the channel are best fitted to analytical expressions which render the problem analytical. The obtained good agreement between experimental and modeled current/voltage characteristics and small signal parameters has confirmed the validity of the model over a wide range of biasing voltages. The model has been used to compare both the performance and characteristics of a PMHEMT with a competetive HEMT. The comparison between the two devices has been made in terms of 2DEG density, transfer characteristics, transconductance, gate capacitance and unity current gain cut-off frequency. The results show that PMHEMT outperforms the conventional HEMT in all considered parameters.

• 한국세라믹학회지
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• 제20권2호
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• pp.153-160
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• 1983

This study was carried out to research the change of mineral phases and the characteristics(apparent specific gra-vity water absorption firing shrinkage modulus of rupture thermal expansion and specific dielectric constant) of the sintered bodies manufactured by kaolin and limestone. Samples were composed of the same theoretical composition as it of anorthite and fired up to 145$0^{\circ}C$ Investigated the change and micro-structure of the mineral phases by XRD and SEM the characterisdtics of the sintered bodies by TMA Automatic Capacitance Bridge and etc. The results were as follow. 1. Reactions of sintering are occurred between 860-95$0^{\circ}C$ and 1200-138$0^{\circ}C$ and state of bloating is occurred at 1410-145$0^{\circ}C$ 2. For the inclusion of feldspar and its fine particles of materials the temperature of producing and collapsing is decreased. 3. Pseudo-wollastonite and gehlenite are formed about 95$0^{\circ}C$ 4. At 114$0^{\circ}C$ anorthite are begin to forming and increase continuously to 138$0^{\circ}C$. Above 141$0^{\circ}C$ content of anorthite are decreased. 5. The variations of bending strength with sintering temperature reflect similar trend of sintered contraction and in-crease continuously from 120$0^{\circ}C$. At 145$0^{\circ}C$ reached about 680kg/cm2. 6. Specific dielectric constant$($\varepsilon$_s)$ of specimen sintered at 141$0^{\circ}C$ is 7.12 and that value is most favorable.

• 한국재료학회지
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• 제31권5호
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• pp.264-271
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• 2021

Porous carbons have been widely used as electrode material for supercapacitors. However, commercial porous carbons, such as activated carbons, have low electrochemical performance. Nitrogen-doping is one of the most promising strategies to improve electrochemical performance of porous carbons. In this study, nitrogen self-doped porous carbon (NPC) is prepared from melamine foam by carbonization to improve the supercapacitive performance. The prepared NPC is characterized in terms of the chemical structures and elements, morphology, pore structures, and electrochemical performance. The results of the N₂ physisorption measurement, X-ray diffraction, and Raman analyses reveal that the prepared NPC has bimodal pore structures and pseudo-graphite structures with nitrogen functionality. The NPC-based electrode exhibits a gravimetric capacitance of 153 F g^-1 at 1 A g^-1, a rate capability of 73.2 % at 10 A g^-1, and an outstanding cycling ability of 97.85 % after 10,000 cycles at 10 A g^-1. Thus, the NPC prepared in this study can be applied as electrode material for high-performance supercapacitors.

• 멤브레인
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• 제13권3호
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• pp.162-173
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• 2003

폴리아닐린(polyaniline, PANI)과 도판트인 camphorsulfonic acid(CSA), dodecyl benzene sulfonic acid(DBSA)와 의몰비 변화에 따라 가상 n형 PANI을 제조하였다. FT-IR측정으로부터 도핑유무를 확인하였고, indium thin oxide(ITO)에 코팅하여 제조한 전극에 대해, 순환전압전류법과 교류임피던스법을 이용하여 도판트의 영향을 조사하였다. FT-IR과 순환전압전류법으로부터, 제조된 전극이 양이온의 도핑-탈도핑이 일어나는 가상 n형의 특성을 가짐을 확인하였다. 순환전압전류법에서 산화-환원 피크전류값은 PANI/DBSA에 비하여 PANI/CSA가 약 5 배정도 더 큰 결과를 보였다. 교류임피던스법으로부터, 두 전극 모두 이상적인 Randles의 등가회로와 유사한 거동을 보였다. 전하이동저항은 PANI/CSA에서 $1.14~1.09 k{\Omega}$으로 거의 일정한 값을 보였고, PANI/DBSA는 DBSA 몰 비에 증가에 따라 $27.73{\sim}8.37K{\Omega}$으로 감소하여 나타났다. 이중층용량 또한 PANI/CSA는 $13.47{\sim}14.59 {\mu}F$으로 거의 일정하였으나, PANI/DBSA는 DBSA 몰 비 증가에 따라 $0.49{\sim}l.20 {\mu}F$으로 증가를 보였다. 결과적으로 PANI/CSA의 전기적 특성이 더 좋았으나, 도판트의 몰 비 증가에 따른 특성은 PANI/CSA 전극은 거의 일정하였고, PANI/DBSA 전극은 전기적 활성이 좋아짐을 알 수 있었다.

• 마이크로전자및패키징학회지
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• 제17권4호
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• pp.73-76
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• 2010

A two-facet approach was used to investigate the parametric performance of functional high-speed DDR3 (Double Data Rate) DRAM (Dynamic Random Access Memory) die placed in different types of BGA (Ball Grid Array) packages: wire-bonded BGA (FBGA, Fine Ball Grid Array), flip-chip (FCBGA) and lead-bonded $microBGA^{(R)}$. In the first section, packaged live DDR3 die were tested using automatic test equipment using high-resolution shmoo plots. It was found that the best timing and voltage margin was obtained using the lead-bonded microBGA, followed by the wire-bonded FBGA with the FCBGA exhibiting the worst performance of the three types tested. In particular the flip-chip packaged devices exhibited reduced operating voltage margin. In the second part of this work a test system was designed and constructed to mimic the electrical environment of the data bus in a PC's CPU-Memory subsystem that used a single DIMM (Dual In Line Memory Module) socket in point-to-point and point-to-two-point configurations. The emulation system was used to examine signal integrity for system-level operation at speeds in excess of 6 Gb/pin/sec in order to assess the frequency extensibility of the signal-carrying path of the microBGA considered for future high-speed DRAM packaging. The analyzed signal path was driven from either end of the data bus by a GaAs laser driver capable of operation beyond 10 GHz. Eye diagrams were measured using a high speed sampling oscilloscope with a pulse generator providing a pseudo-random bit sequence stimulus for the laser drivers. The memory controller was emulated using a circuit implemented on a BGA interposer employing the laser driver while the active DRAM was modeled using the same type of laser driver mounted to the DIMM module. A custom silicon loading die was designed and fabricated and placed into the microBGA packages that were attached to an instrumented DIMM module. It was found that 6.6 Gb/sec/pin operation appears feasible in both point to point and point to two point configurations when the input capacitance is limited to 2pF.

• 전기화학회지
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• 제3권4호
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• pp.235-240
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• 2000

고출력 전기화학 캐패시터를 위한 전극제조공정으로 screen printing과 doctor blade법이 연구되었다. Screen printing에 의해서 제작된 비정질 $MnO_2$전극으로 측정된 CV (cyclic voltammogram)는 이상적인 캐패시터에 가까운 특성을 보여주었다. 50mV/s의 scan rate에서의 CV로부터 계산된 비용량은 $140{\mu}m,\;24{\mu}m,\; 3{\mu}m$의 전극두께에 대해서 각각 5.8F/g과, 81.8F/g, 172.0F/g의 값을 나타내었다. Screen printing전극에서의 $MnO_2$활물질의 이용율을 $100\%$로 하였을 때, paste와 doctor blade법의 이용율은 각각 $3.4\%$와 $47.6\%$이었다. Screen printing은 고출력 응용을 위한 얇은 전극의 코팅 방법으로 우수한 특성을 보였다.

• 전기전자학회논문지
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• 제24권1호
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• pp.120-126
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• 2020

본 연구에서는 인체의 임펄스 응답 신호를 이용하여 사용자를 인식하는 방법을 제안한다. 인체는 물, 근육, 지방, 뼈 등으로 구성되어 있고, 이러한 구성비는 사람마다 다르게 형성되어 있다. 기존의 인체 통신 연구에서는 인체가 커패시터와 저항으로 이루어진 회로로 모델링 되었고, 회로의 특징은 인체의 구성 특성에 따라 다르다는 것이 밝혀졌다. 따라서 인체는 개인별 고유한 채널로 인식될 수 있고, 이를 이용한 사용자 인식이 가능하다는 연구가 보고 되었다. 이 연구에서는, 임펄스 신호를 인체에 인가하여 임펄스 응답 신호를 측정하고, empirical mode decomposition 기법으로 노이즈를 제거한다. 그리고 10개의 피크 값을 추출하고 피크 간 값의 차이를 특징량으로 사용하여 사용자 인증을 수행하였다. 6명의 참가자로부터 수집한 데이터를 k-nearest neighbors(KNN) 알고리즘을 사용하여 분류 성능을 확인한 결과, 임펄스 응답 신호의 전체 시계열 데이터의 분류 정확도는 91.57%이었으나, 제안한 피크 간 값의 차이를 특징량으로 하여 분류를 하였을 때 분류 정확도가 97.71%로 크게 향상되는 것을 확인할 수 있었다.