• Atmosphere
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• v.28 no.1
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• pp.25-35
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• 2018

This study presents future potential sea level change over the seas surrounding Korea using Climate Model Intercomparison Project Phase 5 9 model ensemble result from Representative Concentration Pathways (RCPs), downloaded from icdc.zmaw.de. At the end of 21st century, regional sea level changes are projected to rise 37.8, 48.1, 47.7, 65.0 cm under RCP2.6, RCP4.5, RCP6.0 and RCP8.5 scenario, respectively with the large uncertainty from about 40 to 60 cm. The results exhibit similar tendency with the global mean sea level rise (SLR) with small differences less than about 3 cm. For the East Sea, the Yellow Sea, and the southern sea of Korea, projected SLR in the Yellow Sea is smaller and SLR in the southern sea is larger than the other coastal seas. Differences among the seas are small within the range of 4 cm. Meanwhile, Commonwealth Scientific and Industrial Research Organization (CSIRO) data in 23 years shows that the mean rate of sea level changes around the Yellow Sea is high relative to the other coastal seas. For sea level change, contribution of ice and ocean related components are important, at local scale, Glacial Isostatic Adujstment also needs to be considered.

• Atmosphere
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• v.29 no.4
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• pp.367-380
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• 2019

Global warming causes various problems such as the increase of the sea surface temperature, the change of coastlines, ocean acidification and sea level rise. Sea level rise is an especially critical threat to coastal regions where massive population and infrastructure reside. Sea level change is affected by thermal expansion and mass increase. This study projected future sea level changes in the 21st century using the HadGEM2-AO with RCP8.5 scenario. In particular, sea level change due to water mass input from ice-sheets and glaciers melting is studied. Sea level based on surface mass balance of Greenland ice-sheet and Antarctica ice-sheet rose 0.045 m and -0.053 m over the period 1986~2005 to 2081~2100. During the same period, sea level owing to dynamical change on Greenland ice-sheet and Antarctica ice-sheet rose 0.055 m and 0.03 m, respectively. Additionally, glaciers melting results in 0.145 m sea level rise. Although most of the projected sea level changes from HadGEM2-AO are slightly smaller than those from 21 ensemble data of CMIP5, both results are significantly consistent each other within 90% uncertainty range of CMIP5.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.20 no.2
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• pp.114-118
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• 1987

The authors carried out a model experiment to examine the hydrodynamic charactristics of the simple camber and the super-V otter board. The model otter boards are made of 1 mm thick iron plate. The simple camber otter board is made to have $12\%$ camber ratio and $432\;cm^2$ plane projected area, and the super-V otter board to have the same camber ratio as the former in every latitudinal section and almost the same plane projected area. The experiment had been done in a circular flow tank in the speed range of $0.1\~1.2m/sec$. As a result, it is examined that in the simple camber otter board the most effective angle of attack is about $25^{\circ}$, the shearing coefficient 1.47 and the drag coefficient 0.42, while in the super-V otter board they are about $20^{\circ}$, 1.40 and 0.40 respectively, so that the simple camber otter board performs a little better efficiency than the super-V otter board.

• The Transactions of the Korea Information Processing Society
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• v.6 no.1
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• pp.148-158
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• 1999

ABR traffic form ATM LAN is controlled through RM cell, and the interface function to public ATM network is necessary to provide ABR service efficiently. This paper presnets new interface architecture, which is based on "Projected Node" [6]. using AIPU(ABR Interface Proxy Unit) to support ABR traffic streams incoming from ATM LAN in the public ATM network. For the efficient interworking, the AIPU has designed for interworking functions with ERICA switch mechanism. Conventional ERICA switch mechanism specified in TM 4.0 is basically used for short distance comparative to public network, however AIPU adopts the novel control mechanism to cover logng roud trip time (RTT). To improve the problems and to provide a dynamic range of UCI(Update Count Interval), this paper proposes, a novel control scheme, DUCI ( Dynamic Update Count Interval. And the paper shows inefficiencies of ERICA mechanism with fixed UCI through the simulation results, and represents the performance enhancement of DUCI mechanism developed to adjust the update count interval dynamically.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.2
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• pp.325-330
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• 2012

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET to be next-generation devices. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. DIBL has been investigated according to projected range and standard projected deviation as variables of Gaussian function, and channel structure and channel doping intensity as device parameter. Since the validity of this analytical potential distribution model derived from Poisson's equation has already been proved in previous papers, DIBL has been analyzed using this model. Resultly, DIBL has been greatly changed for channel structure and doping concentration.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.681-684
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• 2011

In this paper, the relationship of potential and charge distribution in channel for double gate(DG) MOSFET has been derived from Poisson's equation using Gaussian function. The subthreshold swing has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and subthreshold swing has been obtained from this model. The subthreshold swing has been defined as the derivative of gate voltage to drain current and is theoretically minimum of 60mS/dec, and very important factor in digital application. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the subthreshold swings have been analyzed according to the shape of Gaussian function.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.3
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• pp.672-677
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• 2013

This paper have analyzed the change of breakdown voltage for channel dimension of double gate(DG) MOSFET. The breakdown voltage to have the small value among the short channel effects of DGMOSFET to be next-generation devices have to be precisely analyzed. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The breakdown voltages have been analyzed for device parameters such as channel thickness and doping concentration, and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result, we know the breakdown voltage is influenced on Gaussian function and device parameters for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.811-814
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• 2012

This paper have analyzed the change of breakdown voltage for channel dimension of double gate(DG) MOSFET. The breakdown voltage to have the small value among the short channel effects of DGMOSFET to be next-generation devices have to be precisely analyzed. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The breakdown voltages have been analyzed for device parameters such as channel thickness and doping concentration, and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is influenced on Gaussian function and device parameters for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.762-765
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• 2013

This paper analyzed the change of subthreshold current for gate oxide thickness of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for gate oxide thickness, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and gate oxide thickness for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.768-771
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• 2013

This paper analyzed the change of subthreshold current for channel doping concentration of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for channel doping concentration, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. As a result, we know the subthreshold current was influenced on parameters of Gaussian function and channel doping concentration for DGMOSFET.