• The Journal of Korea Robotics Society
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• v.4 no.4
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• pp.298-304
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• 2009

This paper describes an algorithm that improves 3D reconstruction result using a multi-sensor fusion disparity map. We can project LRF (Laser Range Finder) 3D points onto image pixel coordinatesusing extrinsic calibration matrixes of a camera-LRF (${\Phi}$, ${\Delta}$) and a camera calibration matrix (K). The LRF disparity map can be generated by interpolating projected LRF points. In the stereo reconstruction, we can compensate invalid points caused by repeated pattern and textureless region using the LRF disparity map. The result disparity map of compensation process is the multi-sensor fusion disparity map. We can refine the multi-sensor 3D reconstruction based on stereo vision and LRF using the multi-sensor fusion disparity map. The refinement algorithm of multi-sensor based 3D reconstruction is specified in four subsections dealing with virtual LRF stereo image generation, LRF disparity map generation, multi-sensor fusion disparity map generation, and 3D reconstruction process. It has been tested by synchronized stereo image pair and LRF 3D scan data.

• Journal of Korean Society for Atmospheric Environment
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• v.15 no.5
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• pp.599-611
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• 1999

Now that the plume of point source was suspected to have strong impact on visibility impairment in Pusan, we evaluated visibility impairment impact of the pulme from Pusan Thermo Electric Power Plant in Pusan. Level-1 and-2 analyses were carried out using VISCREEN(Visual Impact Screen model). The emission rates for this Pusan Thermo Electric Power Plant was projected to be 116g/s of nitrogen oxides(as $NO_2$). The source fails the level-1 test with a Plume perceptibility(ΔE) of 30, nearly 15 times the screeing threshold. To characterize worstcase meteorological conditions for level-2 screening, we obtained meteorological data from Mar., 1996 to Feb., 1997 of Pusan Thermo Electric Power Plant. The source fails the level-2 test with a ΔE of 17, nearly 8.5 times the screening threshold. These analyses indicated that adverse visibility impairment could not be ruled out. Therefore a Level-3 analysis was performed using PLUVUE II(Plume Visibility model). As a result, maximum reduction of visual range for 0900LST in winter was 0.9%. Visual impact of the plume from vast point source was judged to be considerable in terms of background visibility of urban area.

• Journal of Institute of Control, Robotics and Systems
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• v.17 no.10
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• pp.989-994
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• 2011

This study aims to demonstrate the feasibility of a visual servoing-based paired structured light (SL) robot for estimating structural displacement under various external loads. The former paired SL robot, which was proposed in the previous study, was composed of two screens facing with each other, each with one or two lasers and a camera. It was found that the paired SL robot could estimate the translational and rotational displacement each in 3-DOF with high accuracy and low cost. However, the measurable range is fairly limited due to the limited screen size. In this paper, therefore, a visual servoing-based 2-DOF manipulator which controls the pose of lasers is introduced. By controlling the positions of the projected laser points to be on the screen, the proposed robot can estimate the displacement regardless of the screen size. We performed various simulations and experimental tests to verify the performance of the newly proposed robot. The results show that the proposed system overcomes the range limitation of the former system and it can be utilized to accurately estimate the structural displacement.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.3
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• pp.180-187
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• 2004

The miniaturization technologies are perceived as potential key technologies of the future. They will bring about completely different ways in which people and machines interact with the physical world. However, at the present time, the primary technologies used fur miniaturization are dependent on the microelectronic fabrication techniques. The principal shortcomings associated with such techniques are related to the inability of to produce arbitrary three-dimensional features not only in electronics but also in a wide range of metallic materials. In this paper, a ultramicro-stereolithography system assisted with a femto-second laser was developed to fabricate the arbitrary three-dimensional nano/micro-scaled features. In the developed process, a femto-second laser is projected according to CAD data on a photosensitive monomer resin, it induces polymerization of the liquid resin. After the polymerization, a droplet of ethanol is dropped to remove the liquid resin and then the polymerized nano-scaled features only remain. By a newly developed process, miniature devices for an extremely wide range of applications would become a technologically feasible reality. Some of nano/micro-scaled features as examples were fabricated to prove the usefulness of this study at the fundamental stage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.5
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• pp.1143-1148
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• 2014

This paper has analyzed the change of subthreshold swing for doping distribution function of asymmetric double gate(DG) MOSFET. The basic factors to determine the characteristics of DGMOSFET are dimensions of channel, i.e. channel length and channel thickness, and doping distribution function. The doping distributions are determined by ion implantation used for channel doping, and follow Gaussian distribution function. Gaussian function has been used as carrier distribution in solving the Poisson's equation. Since the Gaussian function is exactly not symmetric for top and bottome gates, the subthreshold swings are greatly changed for channel length and thickness, and the voltages of top and bottom gates for asymmetric double gate MOSFET. The deviation of subthreshold swings has been investigated for parameters of Gaussian distribution function such as projected range and standard projected deviation in this paper. As a result, we know the subthreshold swing is greatly changed for doping profiles and bias voltage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.1
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• pp.123-128
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• 2014

This paper analyzed the change of subthreshold current for channel dimension of double gate(DG) MOSFET. The nano-structured DGMOSFET to reduce the short channel effect had to be preciously analyze. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The subthreshold current had been analyzed for device parameters such as channel dimension, and projected range and standard projected deviation of Gaussian function. Since this potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and channel dimension for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.683-685
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• 2012

This paper have presented the analysis of the change for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET with two gates to be next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold chatacteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering is changed, and the deviation rate is changed for device parameters for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.716-718
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• 2012

This paper have presented the change for subthreshold characteristics for double gate(DG) MOSFET based on scaling theory and the shape of Gaussian function. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution and consequently potential distributions have been analyzed closely for experimental results, and the subthreshold characteristics have been analyzed for the shape parameters of Gaussian function such as projected range and standard projected deviation. Since this potential model has been verified in the previous papers, we have used this model to analyze the subthreshold chatacteristics. The scaling theory is to sustain constant outputs for the change of device parameters. As a result to apply the scaling theory for DGMOSFET, we know the subthreshold characteristics have been greatly changed, and the change of threshold voltage is bigger relatively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1260-1265
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• 2012

This paper have presented the change for subthreshold characteristics for double gate(DG) MOSFET based on scaling theory and the shape of Gaussian function. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution and consequently potential distributions have been analyzed closely for experimental results, and the subthreshold characteristics have been analyzed for the shape parameters of Gaussian function such as projected range and standard projected deviation. Since this potential model has been verified in the previous papers, we have used this model to analyze the subthreshold chatacteristics. The scaling theory is to sustain constant outputs for the change of device parameters. As a result to apply the scaling theory for DGMOSFET, we know the subthreshold characteristics have been greatly changed, and the change of threshold voltage is bigger relatively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.6
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• pp.1338-1342
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• 2011

In this paper, threshold voltage characteristics have been analyzed as one of short channel effects occurred in double gate(DG)MOSFET to be next-generation devices. The Gaussian function to be nearly experimental distribution has been used as carrier distribution to solve Poisson's equation, and threshold voltage has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and threshold voltage has been obtained from this model. Since threshold voltage has been defined as gate voltage when surface potential is twice of Fermi potential, threshold voltage has been derived from analytical model of surface potential. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the threshold voltage characteristics have been considered according to the doping profile of DGMOSFET.