• Proceedings of the KIEE Conference
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• 1999.07c
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• pp.1472-1474
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• 1999

This paper proposes the estimation method about how much reactive power can be increased or decreased under prescribed bus voltage limits in non-linear reactive power and power flow equations. The static nonlinear reactive power voltage problem can be formulated using a linear resistive(I-V) network with voltage dependent current sources. Linear programming model is derived for finding bounds on reactive power. This method was applied to future Korean power system and proved its effectiveness.

• Proceedings of the KIEE Conference
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• 1999.07b
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• pp.976-978
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• 1999

Recently PWM invertor is broadly used for control of induction motor. The invertor is able to generate sin wave current from high speed switching power device such as IGBT. However the invertor is disturbed by dead time inevitably needed to prevent a short of the DC link voltage, and the dead time mainly causes distortions of the output current. In this Paper the dead time compensation method which corrects the voltage error from dead time, and Min Max algorithm enlarging the operating voltage of PWM were Proposed. This method can be implemented by software programming without any additional hardware circuit. The proposed algorithms were implemented by DSP(TMS320C31, 40MHz) and FPGA(QL2007, Quick Logic) described in VHDL. and applied to 3 phase induction motor(2.2 KW) to show the superior performance

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.7
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• pp.824-832
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• 2018

According to the government's policy to demonstrate and expand the renewable energy sources, distributed generators such as PV and WP are installed and operated in distribution systems. However, there are many issues related to power quality problems including over voltage and under voltage of customers. In order to overcome these problems, the electric power company have installed a step voltage regulator (SVR) in primary feeders interconnected with distributed generators, and also have established the technical guidelines for the distributed generators to stabilize the customer voltages in distribution systems. However, it is difficult to maintain the customer voltages within allowable limit. Therefore, this paper reviews the problems of voltage control by SVR in a distribution systems interconnected with a large amount of PV systems, and proposes characteristics of operating range and voltage control limit of the small hydropower generators. Also, with the estimation of the influence to the power system voltages from the voltage control mode of generators, this paper proposes the optimal voltage control algorithm of the small hydropower generators. By programming the proposed algorithm into control simulator of exciter, it is confirmed that the proposed algorithm can contribute the voltage stabilization in distribution systems interconnected with large scaled PV systems.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.55 no.7
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• pp.297-305
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• 2006

This paper summarizes a development of visualization software for protective engineering in low-voltage power systems. The study is concentrated on the following aspects. First, a software engineering method is applied for designing the object-oriented program. The design and implementation of a Graphic User Interface(GUI) and its integration to a power system framework are developed using object-oriented programming(OOP) in Visual C++. Second, we develop the short circuit analysis module that oriented a low-voltage power system. It is possible to calculate a peak, symmetrical RMS, DC component and asymmetrical fault currents for each time. And it is the first software that can calculate the fault current for single branch of three-phase system. The calculation accuracy is compared with commercial software, and the libraries of low-voltage components are served for convenience use. Third, protective engineering functions are equipped. It is possible to automatically select the circuit breaker which based on the user input characteristics and the fault current calculation and examine the protective coordination. Through the case study, we verified that the developed software can be effectively used to examine the protective engineering in low-voltage power systems.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.852-855
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• 2012

A DC-DC converter for EEPROM IPs which perfom erasing by the FN (Fowler-Nordheim) tunneling and programming by the band-to-band tunneling is designed in this paper. For the DC-DC converter for EEPROM IPs using a low voltage of $1.5V{\pm}10%$ as the logic voltage, a scheme of using VRD (Read Voltage) instead of VDD is proposed to reduce the pumping stages and pumping capacitances of its charge pump circuit. VRD ($=3.1V{\pm}0.1V$) is a regulated voltage by a voltage regulator using an external voltage of 5V. The designed DC-DC converter outputs VPP (=8V) and VNN (=-8V) in the write mode.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.269-275
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• 2003

Polysilicon-oxide-nitride-oxide-silicon(SONOS) transistors were fabricated by using 0.35${\mu}{\textrm}{m}$ complementary metal-oxide-semiconductor(CMOS) process technology to realize a low voltage programmable flash memory. The thickness of the tunnel oxide, the nitride, and the blocking oxide were 2.4nm, 4.0nm, and 2.5nm, respectively, and the cell area of the SONOS memory was 1.32$\mu$$m^2$. The SONOS device revealed a maximum memory window of 1.76V with a switching time of 50ms at 10V programming, as a result of the scaling effect of the nitride. In spite of scaling of nitride thickness, memory window of 0.5V was maintained at the end of 10 years, and the endurance level was at least 105 program/erase cycles. Over-erase, which was shown seriously in floating gate device, was not shown in SONOS device.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.254.2-254.2
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• 2014

The Transmission Fourier Transform Infrared spectroscopy (FTIR) of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000~2300 cm-1. It indicated that the existence of many silicon phases and defect sources in the matrix of the SiOx films. The total hysteresis width is the sum of the flat band voltage shift (${\Delta}VFB$) due to electron and hole charging. At the range voltage sweep of ${\pm}15V$, the ${\Delta}VFB$ values increase of 0.57 V, 1.71 V, and 13.56 V with 1/2, 2/1, and 6/1 samples, respectively. When we increase the gas ratio of SiH4/N2O, a lot of defects appeared in charge storage layer, more electrons and holes are charged and the memory window also increases. The best retention are obtained at sample with the ratio SiH4/N2O=6/1 with 82.31% (3.49V) after 103s and 70.75% after 10 years. The high charge storage in 6/1 device could arise from the large amount of silicon phases and defect sources in the storage material with SiOx material. Therefore, in the programming/erasing (P/E) process, the Si-rich SiOx charge-trapping layer with SiH4/N2O gas flow ratio=6/1 easily grasps electrons and holds them, and hence, increases the P/E speed and the memory window. This is very useful for a trapping layer, especially in the low-voltage operation of non-volatile memory devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.537-542
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• 2014

The three-dimensional (3-D) NAND flash structure with fully charge storage using edge fringing field effect is presented, and its programming characteristic is evaluated. We successfully confirmed that this structure using fringing field effect provides good program characteristics showing sufficient threshold voltage ($V_T$) margin by technology computer-aided design (TCAD) simulation. From the simulation results, we expect that program speed characteristics of proposed structure have competitive compared to other 3D NAND flash structure. Moreover, it is estimated that this structural feature using edge fringing field effect gives better design scalability compared to the conventional 3D NAND flash structures by scaling of the hole size for the vertical channel. As a result, the proposed structure is one of the candidates of Terabit 3D vertical NAND flash cell with lower bit cost and design scalability.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.75-87
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• 2012

A design paradigm using sequential geometric programming is presented to accurately design CMOS op amps with BSIM3. It is based on new adaptive modeling of transistor parameters through the operating point simulation. This has low modeling cost as well as great simplicity and high accuracy. The short-channel dc, high-frequency small-signal, and short-channel noise models are used to characterize the physical behavior of submicron devices. For low-power and low-voltage design, this paradigm is extended to op amps operating in the subthreshold region. Since the biasing and modeling errors are less than 0.25%, the characteristics of the op amps well match simulation results. In addition, small dependency of design results on initial values indicates that a designed op amp may be close to the global optimum. Finally, the design paradigm is illustrated by optimizing CMOS op amps with accurate transfer function.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.113-117
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• 2007

We have investigated the effects of doping concentration in polysilicon floating gate on the endurance characteristics of the EEPROM cell haying the structure of spacer select transistor. Several samples were prepared with different implantation conditions of phosphorus for the floating gate. Results show the dependence of doping concentration in polysilicon floating gate on performance of EEPROM cell from the floating gate engineering point of view. All of the samples were endured up to half million programming/erasing cycle. However, the best $program-{\Delta}V_{T}$ characteristic was obtained in the cell doped at the dose of $1{\times}10^{15}/cm^{2}$.