Browse > Article
http://dx.doi.org/10.4313/JKEM.2007.20.2.113

Effects of Doping Concentration in Polysilicon Floating Gate on Programming Threshold Voltage of EEPROM Cell  

Chang, Sung-Keun (청운대학교 디지털방송공학과)
Kim, Youn-Jang (매그나칩 반도체)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.20, no.2, 2007 , pp. 113-117 More about this Journal
Abstract
We have investigated the effects of doping concentration in polysilicon floating gate on the endurance characteristics of the EEPROM cell haying the structure of spacer select transistor. Several samples were prepared with different implantation conditions of phosphorus for the floating gate. Results show the dependence of doping concentration in polysilicon floating gate on performance of EEPROM cell from the floating gate engineering point of view. All of the samples were endured up to half million programming/erasing cycle. However, the best $program-{\Delta}V_{T}$ characteristic was obtained in the cell doped at the dose of $1{\times}10^{15}/cm^{2}$.
Keywords
EEPROM; Select transistor; Endurance; Floating gate; $Program-V_{T}$;
Citations & Related Records
연도 인용수 순위
  • Reference
1 J. H. Lee and M. K. Ko, 'A novel EEPROM cell for smart card application', Microelectron. Eng., Vol. 71, p. 283, 2004   DOI   ScienceOn
2 H. W. Tsai, P. Y. Chiang, S. S. Chung, D. S. Kuo, and M. S. Liang, 'The performance and reliability enhancement of ETOX p-channel flash EEPROM cell with p-doped floating-gate', VLSI Tech. digest paper, p. 36, 2003
3 K. F. Schuegraf, C. C. King, and C. Hu, 'Impact of Polysililcon Depletion in Thin Oxide MOS Technology', VLSI Tech. System and Applications, p. 86, 1993
4 J. Lee, Y. Epstein, A. C. Berti, J. Huber, K. Hess, and J. W. Lyding, 'The effect of deuterium passivation at different steps of CMOS processing on lifetime improvements of CMOS transistors', IEEE Trans. Electron Devices, Vol. 46, No.8, p. 1812, 1999   DOI   ScienceOn
5 J. M. Daga, C. Papaix, M. Merandat, S. Richard, G. Medulla, J. Guichaoua, and D. Auvergne, 'Design techniques for EEPROM's embedded in portable system on chips', IEEE Des. Test Comut., Vol. 20, No.1, p. 68, 2003
6 U. Karthaus and M. Fisher, 'Fully integrated passive UHF RF ill transponder IC with 16.7 m W minimum RF input power', IEEE J. Solid State Circuits, Vol. 38, No. 11, p. 1602, 2003   DOI   ScienceOn
7 L. Baldi, L. Sourgen, and P. Gravez, 'An advanced smart card family for public key algorithm', Proc. ICECS IEEE Int. cont., p. 558, 1996
8 J. Caywood, C. J. Huang, and Y. J. Chang, 'A novel nonvolatile cell suitable for both flash and byte-writable applications', IEEE Trans. Electron Devices, Vol. 49, No. 10, p. 802, 2002   DOI   ScienceOn
9 K. H. Lee and Y. C. King, 'New singlepoly EEPROM with cell size down to 8F2 for high density embedded nonvolatile memory applications', VLSI Tech. digest paper, p. 93, 2003
10 D. M. Carthy, R. Duane, M. O'Shea, R. Duffy, K. M. Carthy, A. M. Kelliher, A. Concannon, and A. Mathewson, 'A novel CMOS compatible top-floating-gate EEPROM cell for embedded application', IEEE Trans. Electron Devices, Vol. 50, No. 11, p. 1708, 2003   DOI   ScienceOn