• 설비공학논문집
• /
• 제23권11호
• /
• pp.754-761
• /
• 2011

The present study numerically investigates two-dimensional flow and heat transfer in the multiple confined impinging slot jet. Numerical simulations are performed for the different Reynolds numbers(Re=100 and 200) in the range of nozzles from 1 to 9 and height ratios(H/D) from 2 to 5, where H/D is the ratio of the channel height to the slot width. The vector plots of velocity profile, stagnation and averaged Nusselt number distributions are presented in this paper. The dependency of thermal fields on the Reynolds number, nozzle number and height ratio can be clarified by observing the Nusselt number as heat transfer characteristic at the stagnation point and impingement surface. The Nusselt number at the stagnation point of the central slot shows unsteadiness at H/D=3 and Re=200. The value of Nusselt number at the stagnation point of the central slot decreases with higher Reynolds number and number of nozzle although overall area averaged Nusselt number increases. Hence careful selection of geometrical parameters and number of nozzle are necessary for optimization of the heat transfer performance of multiple slot impinging jet.

• 대한기계학회논문집B
• /
• 제34권3호
• /
• pp.229-235
• /
• 2010

원관 내부반경이 변하는 사각형상 환형 훤의 최적 값들이 변수 분리법에 의하여 제시된다. 최적의 열손실이 존재할 수 있는 주위 대류특성계수의 범위가 나열된다. 최적 열손실, 그와 관련된 최적의 훤 유용성, 훤 길이 그리고 훤 높이가 원관 내부반경, 내부유체 대류특성계수, 훤 체적, 그리고 주위 대류특성계수의 함수로 표현된다. 결과 중 하나는 훤 체적과 훤 바닥반경이 고정되었을 때 최적 열손실, 유용성 그리고 훤 길이는 원관 내부반경의 증가에 따라 선형적으로 증가함을 보여준다.

• 한국식품저장유통학회지
• /
• 제13권5호
• /
• pp.623-628
• /
• 2006

꽃향유로부터 정유물을 추출하여 천연향료로 개발하기 위하여 수증기증류법으로 추출하고 추출공정의 최적 조건을 반응표면 분석법으로 얻고자 하였다. 수증기증류법의 추출조건에 따른 꽃향유 추출물의 품질특성으로 수율과 총페놀화합물, 전자공여능과 주요 향기성분으로 estragole 과 thymol, beta-caryophyllene의 함량을 분석하였다. 추출온도가 추출시간보다 더 큰 영향을 주는 것으로 나타났으며, 각 품질 특성에 대하여 수립된 예측모델식이 모두 유의성이 높아 각 변수의 예측이 가능함을 보였다. 실험구간내에서 능선분석을 통하여 최대점과 추출조건을 예측하였으며 품질특성 값을 최대로 하는 제한 조건으로 얻어진 최적 추출조건은 $108^{\circ}C$와 2.1시간이었다.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2011년도 자성 및 자성재료 국제학술대회
• /
• pp.29-30
• /
• 2011

We have demonstrated the fabrication of sub 30 nm MTJ pillars with PMA characteristics. The multi-step IBE process performed at $45^{\circ}$ and $30^{\circ}$, using NER resulted in almost vertical side profiles. There deposition on the sidewalls of the NER prevented lateral etching of the resist hard mask allowing vertical MTJ side profile formation without any reduction in the lithographically defined resist lateral dimensions. For the 28nm STT-MTJ pillars, the measured TMR ratio was 13 % with resistance of 1 $k{\Omega}$, which was due to remaining redeposition layers less than 0.1 nm thick. With further optimization in multi-step IBE conditions, it will be possible to fabricate fully operating sub 30 nm perpendicular STT-MTJ structures for application to future non-volatile memories.

• 한국지능시스템학회논문지
• /
• 제22권3호
• /
• pp.300-304
• /
• 2012

본 논문은 리튬 폴리머 배터리 셀의 잔존충전용량을 추정하기 위한 비선형 관측기의 설계방법을 제시한다. 배터리 셀의 동적방정식은 비선형 전압원을 갖는 간단한 RC 전기회로로 모델하고 파라메터는 비선형 최적화기법을 이용하여 구한다. 관측기 이득은 제곱합 분해기법을 사용하여 오차의 동적방정식이 점근적으로 안정하고 추정오차 감소율이 설계자가 지정한 값 이하가 되도록 설계한다. 관측기의 성능을 입증하기 위하여 UDDS 전류 프로파일을 사용한 실험 데이터를 이용하여 모의실험을 수행하였다.

• Transactions on Electrical and Electronic Materials
• /
• 제11권1호
• /
• pp.15-19
• /
• 2010

In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a $0.35\;{\mu}m$ standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and $1.5\;{\mu}m$. The drain current ($I_{ON}$), transconductance ($g_m$), substrate current ($i_{SUB}$), drain to source leakage current ($i_{OFF}$), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved $I_{ON}$ and $g_m$ characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and $I_{OFF}$ characteristics.

• 한국가시화정보학회지
• /
• 제17권1호
• /
• pp.43-52
• /
• 2019

'Ionic wind' is phenomenon induced by corona discharge which occurs when large electric potential is applied to electrodes with high curvature. The ionic wind has advantage that it could generate forced convective flow without any external energy like separate pump. In this study, 'pin-mesh' arrangement is utilized for experiments. First, optimization of configuration is conducted with local momentum of ionic wind behind the mesh. Empirical equation for prediction about velocity profile was derived using the measured results. Secondly, the enhancement of mass transfer rate of acetone with ionic wind was analyzed. Also, the drying efficiency using a fan which has same flow rate was compared with ionic wind for identification of additional chemical reaction. At last, the drying process of organic solvent was visualized with image processing. As a result, it was shown that the use of ionic wind could dry organic matter four times faster than the natural condition.

• 반도체디스플레이기술학회지
• /
• 제20권3호
• /
• pp.32-38
• /
• 2021

We developed an inductively coupled plasma (ICP) etcher for GaN etching using a parallel plasma electrode source with a multifunctional chuck matched to it in order for the low power consumption and low process cost in comparison with the conventional ICP system with a helical-type plasma electrode source. The optimization process condition using it for the micro light-emitting diode (µ-LED) chip fabrication was established, which is an ICP RF power of 300 W, a chuck power of 200 W, a BCl₃/Cl₂ gas ratio of 3:2. Under this condition, the mesa structure with the etch depth over 1 ㎛ and the etch angle over 75° and also with no etching residue was obtained for the µ-LED chip. The developed ICP showed the improved values on the process pressure, the etch selectivity, the etch depth uniformity, the etch angle profile and the substrate temperature uniformity in comparison with the commercial ICP. The µ-LED chip fabricated using the developed ICP showed the similar or improved characteristics in the L-I-V measurements compared with the one fabricated using the conventional ICP method

• International Journal of Knowledge Content Development & Technology
• /
• 제11권1호
• /
• pp.29-48
• /
• 2021

The paper discusses the ICT infrastructure as far as the availability of (computers, local or wide area networks, Internet connectivity and its reliability, size of the bandwidth and its optimization, etc.) in the S&T research institution. It also examined the profile of the research scientists and looked at the type of ICT infrastructure that is available for their use as well as the reliability of the Internet connectivity within these research institutions. It looked at the broadband capacities of the research institutions and the ICT capabilities in respect of the technical and managerial support back-up that are available to the research institutions. The study used the survey research method with a questionnaire as well as personal observation to gather the data. From the data gathered, it was realized that the internet connectivity and the size of the bandwidth that the R&D institutions subscribed to differed significantly. Again, the extent to which the research scientists were able to access the internet in their respective institutions depended on the quality of the local network in place. Generally, the investments in ICT were made for different management objectives, and these were meant to facilitate the generation of new knowledge as well as make measurable improvements in R&D activities.

• 마이크로전자및패키징학회지
• /
• 제29권1호
• /
• pp.1-6
• /
• 2022

The mobile device industry demands much higher levels of integration and lower costs coupled with a growing awareness of the complete system's configuration. A subsystem module package is similar to a board-level circuit that integrates a system function in a package beyond a System-in-Package (SiP) design. It is an advanced IC packaging solution to enhance the PDN and achieve a smaller form factor. Unlike a system-level design with a decoupling capacitor, a subsystem module package system needs to redefine the role of the capacitor and its configuration for PDN performance. Specifically, the design of package's form factor should include careful consideration of optimal PDN performance and the number of components, which need to define the decoupling capacitor's value and the placement strategy for a low impedance profile with associated cost benefits. This paper will focus on both the static case that addresses the voltage (IR) drop and AC analysis in the frequency domain with three specific topics. First, it will highlight the role of simulation in the subsystem module design for the PDN. Second, it will compare the performance of double-sided component placement (DSCP) motherboards with the subsystem module package and then prove the advantage of the subsystem module package. Finally, it will introduce three-terminal decoupling capacitor (decap) configurations of capacitor size, count and value for the subsystem module package to determine the optimum performance and package density based on the cost-effective model.