• 제목/요약/키워드: Process memory

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Improvement Method and Performance Analysis of Shared Memory in Dual Core Embedded Linux system (듀얼코어 임베디드 리눅스 시스템에서 공유 메모리 성능 개선 방안 및 성능 분석)

  • Jung, Ji-Sung;Kim, Chang-Bong
    • Journal of Internet Computing and Services
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    • v.11 no.4
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    • pp.95-106
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    • 2010
  • Recently multiple process communicate together. They share resource and information for cooperation in complicated programming environment. Kernel provides IPC (Inter -Process Communication) for communication with each other process. Shared Memory is a technique that many processes can access to identical memory area in the Linux environment. In this paper, we propose a performance improvement method of shared memory in the dual-core embedded linux system which is consist of different core and different operating system. We construct the MPC2530F (ARM926F+ARM946E) linux system and measure the performance therein. We attempt a performance enhancement in each CPU for each process which uses a shared memory.

Integration Process and Reliability for $SrBi_2$ $Ta_2O_9$-based Ferroelectric Memories

  • Yang, B.;Lee, S.S.;Kang, Y.M.;Noh, K.H.;Hong, S.K.;Oh, S.H.;Kang, E.Y.;Lee, S.W.;Kim, J.G.;Shu, C.W.;Seong, J.W.;Lee, C.G.;Kang, N.S.;Park, Y.J.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.3
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    • pp.141-157
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    • 2001
  • Highly reliable packaged 64kbit ferroelectric memories with $0.8{\;}\mu\textrm{m}$ CMOS ensuring ten-year retention and imprint at 125^{\circ}C$ have been successfully developed. These superior reliabilities have resulted from steady integration schemes free from the degradation, due to layer stress and attacks of process impurities. The resent results of research and development for ferroelectric memories at Hynix Semiconductor Inc. are summarized in this invited paper.

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Emotional Memory Mechanism Depending on Emotional Experience (감정적 경험에 의존하는 정서 기억 메커니즘)

  • Yeo, Ji Hye;Ham, Jun Seok;Ko, Il Ju
    • Journal of Korea Society of Digital Industry and Information Management
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    • v.5 no.4
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    • pp.169-177
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    • 2009
  • In come cases, people differently respond on the same joke or thoughtless behavior - sometimes like it and laugh, another time feel annoyed or angry. This fact is explained that experiences which we had in the past are remembered by emotional memory, so they cause different responses. When people face similar situation or feel similar emotion, they evoke the emotion experienced in the past and the emotional memory affects current emotion. This paper suggested the mechanism of the emotional memory using SOM through the similarity between the emotional memory and SOM learning algorithm. It was assumed that the mechanism of the emotional memory has also the characteristics of association memory, long-term memory and short-term memory in its process of remembering emotional experience, which are known as the characteristics of the process of remembering factual experience. And then these characteristics were applied. The mechanism of the emotional memory designed like this was applied to toy hammer game and I measured the change in the power of toy hammer caused by differently responding on the same stimulus. The mechanism of the emotional memory suggest in above is expected to apply to the fields of game, robot engineering, because the mechanism can express various emotions on the same stimulus.

Verbal Memory Function and Characteristics of Memory Process in Schizophrenia and Affective Disorder (정신분열병과 기분장애 환자의 언어적 기억능력과 기억과정의 특성에 대한 연구)

  • Lee, So-Youn;Lee, Bun-Hee;Lee, Jung-Ae;Kim, Kye-Hyun;Kim, Yong-Ku;Park, Sun-Wha
    • Korean Journal of Biological Psychiatry
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    • v.12 no.2
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    • pp.207-215
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    • 2005
  • Objectives:This study was to compare verbal memory ability among patients with schizophrenia, bipolar manic patients and unipolar depressive patients, and to understand their charicteristics of memory process. Methods:All subjects were hospitalized patients and had been interviewed by using the Structured Clinical Interview for DSM-IV(SCID). Schizophrenic patients(N=40), bipolar manic patients(N=17), and unipolar depressive patients(N=20) were assessed with K-AVLT for verbal memory and with K-WAIS for verbal IQ. Three groups were compared regarding total immediate recall, delayed recall, delayed recognition, learning curve, memory retention, and retrieval efficiency under controlled verbal IQ. Multiple regression analysis was performed to find which clinical factors have an influence on verbal memory ability. Results:In MANCOVA, differences of verbal memory test scores among the groups were statistically significant(F=1.800, p<.05). In post hoc analysis, Patients with schizophrenia and bipolar mania showed poorer performance in immediate recall, delayed recall, delayed recognition, retrieval efficiency than unipolar depres- sive patients. And schizophrenics performed poorly in delayed recall, delayed recognition, retrieval efficiency than nonpsychotic affective disorder group, but no difference in total immediate recall, delayed recall, delayed recognition, retrieval efficiency between the schizophrenic group and the psychotic affective group. Conclusions:These results partially confirm previous reports of verbal memory ability among major psychiatric disorders. Our results showed that psychotic symptoms were related with verbal memory, and longer duration of illness was related with poorer performance in schizophrenia and unipolar depression.

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Efficient Process Checkpointing through Fine-Grained COW Management in New Memory based Systems (뉴메모리 기반 시스템에서 세밀한 COW 관리 기법을 통한 효율적 프로세스 체크포인팅 기법)

  • Park, Jay H.;Moon, Young Je;Noh, Sam H.
    • Journal of KIISE
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    • v.44 no.2
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    • pp.132-138
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    • 2017
  • We design and implement a process-based fault recovery system to increase the reliability of new memory based computer systems. A rollback point is made at every context switch to which a process can rollback to upon a fault. In this study, a clone process of the original process, which we refer to as a P-process (Persistent-process), is created as a rollback point. Such a design minimizes losses when a fault does occur. Specifically, first, execution loss can be minimized as rollback points are created only at context switches, which bounds the lost execution. Second, as we make use of the COW (Copy-On-Write)mechanism, only those parts of the process memory state that are modified (in page units) are copied decreasing the overhead for creating the P-process. Our experimental results show that the overhead is approximately 5% in 8 out of 11 PARSEC benchmark workloads when P-process is created at every context switch time. Even for workloads that result in considerable overhead, we show that this overhead can be reduced by increasing the P-process generation interval.

Memory Impairment in Dementing Patients (치매환자의 기억장애)

  • Han, Il-Woo;Seo, Sang-Hun
    • Sleep Medicine and Psychophysiology
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    • v.4 no.1
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    • pp.29-38
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    • 1997
  • Dementia is defined as a syndrome which is characterized by various impairments in cognitive functions, especially memory function. Most of the diagnostic criteria for dementia include memory impairment as on essential feature. Memory decline can be present as a consequence of the aging process. But it does not cause significant distress or impairment in social and occupational functionings while dementiadoes. Depression may also be associated with memory impairment. However, unlike dementia, depression dose not cause decrease in delayed verbal learning and recognition memory. In dementia, different features of memory impairment may be present depending on the involved area. Memory impairment in cortical dementia is affected by the disturbance of encoding of information and memory consolidation, while memory imparnene in subcortical denentiy is affected by the disturbance of retrieval in subcortical dementia.

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Study on Memory Data Encryption of Windows Hibernation File (윈도우 최대 절전 모드 파일의 메모리 데이터 암호화 기법 연구)

  • Lee, Kyoungho;Lee, Wooho;Noh, Bongnam
    • Journal of the Korea Institute of Information Security & Cryptology
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    • v.27 no.5
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    • pp.1013-1022
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    • 2017
  • Windows hibernation is a function that stores data of physical memory on a non-volatile media and then restores the memory data from the non-volatile media to the physical memory when the system is powered on. Since the hibernation file has memory data in a static state, when the attacker collects it, key information in the system's physical memory may be leaked. Because Windows does not support protection for hibernation files only, we need to protect the memory that is written to the hibernate file. In this paper, we propose a method to encrypt the physical memory data in the hibernation file to protect the memory data of the processes recorded in the hibernation file. Hibernating procedure is analyzed to encrypt the memory data at the hibernating and the encryption process for hibernation memory is implemented to operate transparently for each process. Experimental results show that the hibernation process memory encryption tool showed about 2.7 times overhead due to the crypt cost. This overhead is necessary to prevent the attacker from exposing the plaintext memory data of the process.

Non volatile memory device using mobile proton in gate insulator by hydrogen neutral beam treatment

  • Yun, Jang-Won;Jang, Jin-Nyeong;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.192.1-192.1
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    • 2015
  • We demonstrated the nonvolatile memory functionality of nano-crystalline silicon (nc-Si) and InGaZnOxide (IGZO) thin film transistors (TFTs) using mobile protons that are generated by very short time hydrogen neutral beam (H-NB) treatment in gate insulator (SiO2). The whole memory fabrication process kept under $50^{\circ}C$ (except SiO2 deposition process; $300^{\circ}C$). These devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We also executed hydrogen treatment in order to figure out the difference of mobile proton generation between PECVD and H-NB CVD that we modified. Our study will further provide a vision of creating memory functionality and incorporating proton-based storage elements onto a probability of next generation flexible memorable electronics such as low power consumption flexible display panel.

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