• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.59-62
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• 2003

Our Zn diffusion into n-type $GaAs_{0.60}P_{0.40}$ used ampoule-tube method to increase IV. N-type epitaxial wafers were preferred by $H_2SO_4$-based pre-treatment. $SiO_2$ thin film was deposited by PECVD for some wafers. Diffusion times and diffusion temperatures respectability are 1, 2, 3 hr and 775, $805^{\circ}C$. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. The highest IV is about 270 mcd at the diffusion condition of $775^{\circ}C$, 3h for the wafers which didn't deposit $SiO_2$ thin films. Also, the longer diffusion time is the higher IV for the wafers which deposit $SiO_2$ thin films.

• Elastomers and Composites
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• v.48 no.2
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• pp.167-171
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• 2013

Weatherability was examined according to aluminum particle size and its orientation used in PCM(Paint Coated Metal). Substrate delamination was checked by different UV transmission rate with QUV$^{(R)}$ (Q-LAB) equipment that can make accelerated UV irradiation. Film was prepared using three different types of conflake aluminum pastes under a PCM coating process and clearcoat was sprayed. UV transmission test results showed low transmission rate when EKART #790 having the smallest particle size and horizontal orientation was used. From the gloss retention results, gloss retention was highest in EKART #790 and followed by #770, #750.

• Bulletin of the Korean Chemical Society
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• v.29 no.7
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• pp.1349-1352
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• 2008

We report a novel patterning method for a homo-polymeric poly(3-hexylthiophene) (P3HT) nanofilm particularly capable of strong adhesion to a $SiO_2$ surface. An oxidized silicon wafer substrate was micro-contact printed with n-octadecyltrichlorosilane (OTS) monolayer, and subsequently its negative pattern was selfassembled with three different amino-functionalized alkylsilanes, (3-aminopropyl)trimethoxysilane (APS), N- (2-aminoethyl)-3-aminopropyltrimethoxy silane (EDAS), and (3-trimethoxysilylpropyl) diethylenetriamine (DETAS). Then, P3HT nanofilms were selectively grown on the aminosilane pre-patterned areas via the vapor phase polymerization method. To evaluate the adhesion, patterning, and the film itself, the PEDOT nanofilms and SAMs were investigated with a $Scotch^{(R)}$ tape test, contact angle analyzer, ATR-FT-IR, and optical and atomic force microscopes. The evaluation showed that the newly developed all bottom-up process can offer a simple and inexpensive patterning method for P3HT nanofilms robustly adhered to an oxidized Si wafer surface by the mediation of $FeCl_3$ and amino-functionalized alkylsilane SAMs.

• Journal of Welding and Joining
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• v.32 no.2
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• pp.70-75
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• 2014

In automotive industry, applying of Mg alloy to autobody has been issued recently as a light metal. But poor resistance spot weldability of Mg alloy is blocking commercialization. So studies on improving resistance spot weldability of Mg alloy is increasing continuously. For reduce loss of heat input during welding, inverter DC power source is considered because of short rise time to target welding current. But rapid rising of welding current can increase temperature rapidly in nugget and oxide film between electrode and base metal, and that causes generating expulsion on low welding current range. In this study, for increase optimum welding current range and prevent generating expulsion, applicate various types of welding current waveform controls during resistance spot welding. For analysis effects of each current waveform control, acceptable welding current regions according to electrode force and welding time is determined and lobe diagram is derived. In result, pre heat is proposed as optimum type of welding current waveform control.

• Journal of the Ergonomics Society of Korea
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• v.21 no.1
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• pp.95-112
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• 2002

Two experiments were carried out to compare the suitability in visual tasks between cathode-ray tube (CRT) and thin film transistor-liquid crystal display (TFT-LCD). In the first experiment, the subjects were requested to detect pre-assigned target words or icons among distracters presented under time-invariant (static) image mode. The subjects' visual performance and fatigue were assessed while carrying out search tasks with dim and bright ambient light conditions. Significant interaction effects were found among displays, task types, and ambient light conditions. Due to visual fatigue, the subjects' accommodative power decreased in the end of task and the degradation was more significant for the CRT users and under bright ambient light. IN the second experiment, the subjects performed information processing task with time-varying road signs at a driving simulator to assess interaction effects between display types and changing speed of dynamic image. The perception time using TFT-TCD was shorter under slow image change while that of CRT was shorter rapid image change. Findings from this study suggest that, to improve visual task performance, users should carefully select their visual display type depending on the task to be performed.

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.71-74
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• 2009

Electroplated Cu is a cost efficient metallization method in microelectronic packaging applications. Typically in 3-D chip staking technology, utilizing through silicon via (TSV), electroplated Cu metallization is inevitable for the throughput as well as reducing the cost of ownership (COO).To achieve a comparable film quality to sputtering or CVD, a pre-cleaning process as well as plating process is crucial. In this research, atmospheric plasma is employed to reduce the usage of chemicals, such as trichloroethylene (TCE) and sodium hydroxide (NaHO), by substituting the chemical assisted organic cleaning process with plasma surface treatment for Cu electroplating. By employing atmospheric plasma treatment, marginally acceptable electroplating and cleaning results are achieved without the use of hazardous chemicals. The experimental results show that the substitution of the chemical process with plasma treatment is plausible from an environmentally friendly aspect. In addition, plasma treatment on immersion Sn/Cu was also performed to find out the solderability of plasma treated Sn/Cu for practical industrial applications.

• Tuberculosis and Respiratory Diseases
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• v.61 no.1
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• pp.60-64
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• 2006

Pulmonary aspergillosis presents as the following three different types depending on the immune status of the host: invasive aspergillosis, allergic bronchopulmonary aspergillosis (ABPA), and aspergilloma. Aspergilloma develops as a result of an aspergillus growth inside a pre-existing lung cavity. However, endobronchial aspergilloma without a lung parenchymal lesion is quite rare. We encountered a case of endobronchial aspergilloma that developed in a healthy 75 year-old woman that led to necrotizing pneumonia of the right lower lobe. The chief complaints were fever, cough and yellowish sputum. The chest film revealed haziness with cavity-like shadows on the right lower lobe, and the chest CT scan showed endobronchial calcified density in the basal bronchus of the right lower lobe with peribronchial lymph node enlargement. Bronchoscopy revealed an obstruction of the basal orifice of the right lower lobe by blackish stone-like material, and the aspergilloma was confirmed by the bronchoscopic biopsy. The pneumonia improved after bronchoscopic removal of this lesion. We report this case along with a review of the relevant literature.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.425-427
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• 1996

New fabrication technique was developed to make three dimensional silicon microstructure with five fold vertical steps through entire wafer thickness. Each step is pre-defined on multiply stacked thermal oxide and silicon nitride (O/N) layers by photolithographies. Multi-stepped silicon microstructure is formed by anisotropic etch in aqueous KOH solution with the patterned nitride film as masking layer. Fabricated microstructure consists of four $16{\mu}m$ thick flexural spring beams, $290{\mu}m$ thick proof mass, mesas for overrange stop with $10{\mu}m$ height from the surface of the proof mass, and the other mesas and V grooves used for assembling this structure to the packaging frame of pendulous servo accelerometer. Using the numerical finite element method (FEM) simulator: ABAQUS, mechanical characteristics of the fabricated microstructure by the developed technique was compared with those of the same structure processed by one step silicon bulk etch followed by oxidation and patterning the etched region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.163-168
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• 2020

We studied the change of photovoltaic properties of a flexible CuIn_xGa(_1-x)Se₂ (CIGS) solar cell fabricated on polyimide by mechanical bending with curvature radii of 75 mm (75R) and 20 mm (20R). The flexible CIGS cells were flattened on a PET film, then placed and forced against the surface of a curved block fabricated with pre-designed curvatures. Both up (compressive) and down (tensile) bending were applied to a specimen of CIGS on PET with curvatures of 75R and 20R for 10,000 times and 2,000 times, respectively. From J-V measurements, we found that the conversion efficiency (Eff.) was reduced by 3% and 4% for up-and down-bending, respectively, at curvature 75R; it was greatly reduced by 15% for curvature 20R in the up-bending. However, the open circuit voltage (V_oc) and short-circuit current density (J_sc) seemed to change little, within 3%, for the applied mechanical stresses. The degradation in Eff. resulted from the deterioration of the series (R_s) and shunt (R_sh) resistances of the solar cell.

• Journal of Surface Science and Engineering
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• v.45 no.2
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• pp.75-80
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• 2012

A sputter-sublimation source was tested for high rate deposition of protective coating of PEMFC(polymer electrolyte membrane fuel cell) with high electrical conductivity and anti-corrosion capability by DC biasing of a metal rod immersed in inductively coupled plasma. A SUS(stainless steel) tube, rod were tested for low thermal conductivity materials and copper for high thermal conductivity ones. At 10 mTorr of Ar ICP(inductively coupled plasma) with 2.4 MHz, 300 W, the surface temperature of a SUS rod reached to $1,289^{\circ}C$ with a dc bias of 150 W (-706 V, 0.21 A) in 2 mins. For 10 min of sputter-sublimation, 0.1 gr of SUS rod was sputter-sublimated which is a good evidence of a high rate deposition source. ICP is used for sputter-sublimation of a target material, for substrate pre-treatment, film quality improvement by high energy particle bombardment and reactive deposition.