• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.61-66
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• 2010

Cu-Cu thermo-compression bonding process was successfully developed as functions of the deposited Cu thickness and $Ar+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the interfacial toughness was measured by 4-point bending test. Pre-annealing with $Ar+H_2$ gas at $300^{\circ}C$ is effective to achieve enough interfacial adhesion energy irrespective of Cu film thickness. Successful Cu-Cu bonding process achieved in this study results in delamination at $Ta/SiO_2$ interface rather than Cu/Cu interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.2
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• pp.95-100
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• 2016

We fabricated a tin sulfide (SnS) layer with Sn/Mo/glass layers followed by a RTP (rapid thermal processing), and studied the film growth and structural characteristics as a function of annealing temperature and time. The elemental sulfur (S) was cracked thermally and applied to form SnS polycrystalline film out of the Sn percursor at pre-determined pressures in the RTP tube. The sulfurization was done at the temperature from $200^{\circ}C$ to $500^{\circ}C$ for a time period of 10 to 40 min. At ${\leq}300^{\circ}C$, 20 min., p-type SnS thin films was grown and showed the best composition of at.% of [S]/[Sn] $${\sim_=}$$ 1 and [111] preferred orientation as investigated from using XRD (X-ray diffraction) analysis and EDS (energy dispersive spectroscopy) and SEM (scanning electron microscopy), and optical absorption by a UV-VIS spectrometer. In this paper, we report the details of growth characteristics of single phase SnS thin film as a function of annealing temperature and time associated with the pressure and ambient gas in the RTP tube.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.371-375
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• 2014

Diffusion coefficient of Fe in polycrystalline host ZnSe as a mid-IR gain medium has been measured in the annealing temperature ranges of 850 to $950^{\circ}C$. The synthesis of the samples was carried out in quartz ampoule in which the Fe thin film deposited by physical vapor evaporation method on the ZnSe. One can realize that the diffusion coefficient strongly depends on the surface active surfactants through the cleaning process and the substrate temperature during the thin film deposition leading to $2.04{\times}10^{-9}cm^2/s$ for $Fe^{2+}:ZnSe$. The Annealing temperature dependence of the Fe ions diffusion in ZnSe was used to evaluate the activation energy, $E_a$=1.39 eV for diffusion and the pre-exponential factor $D_0$ of $13.5cm^2/s$.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.529-532
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• 1988

This paper proposes a graph matching algorithm based on simulated annealing, which assures the globally optimal solution for circuit partitioning for the placement in the rectilinear region occurring as a result of the pre-placement of some macro cells, or onto the nonplanar surface in some military or space applications. The circuit graph ($G_{C}$) denoting the circuit topology is formed by a hierarchical bottom-up clustering of cells, while another graph called region graph ($G_{R}$) represents the geometry of a planar rectilinear region or a nonplanar surface for circuit placement. Finding the optimal many-to-one vertex mapping function from $G_{C}$ to $G_{R}$, such that the total mismatch cost between two graphs is minimal, is a combinatorial optimization problem which was solved in this work for various examples using simulated annealing.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.90-94
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• 1995

Defects introduced by Si, Ge preamorphization and their effects on the dopant diffusion and electrical characteristics. Good crystalline quality are obtained after the annealing of Ge ion double implanted samples. The defect clusters under the a/c interface are expected to extend up to the deep in the Si ion implanted samples. The dislocation loops near the junction absorb the interstitial Si atoms resolving from the defect cluster and result in the prevention of enhanced boron diffusion near the tail region of boron profile and show good reverse current charactristics.

• Journal of the Korean Society for Heat Treatment
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• v.33 no.4
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• pp.161-172
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• 2020

The tensile property of A5082 and A6060 aluminium wrought alloys was investigated, in terms of the strain rate sensitivity on alloy conditions by heat treatment and bake hardenability on pre-strain prior to strain ageing. The tensile test was carried out in a range of strain rate of 4.17 × 10^-5 s^-1 ~ 4.17 × 10^-5 s^-1 in room temperature and the nominal range of pre-strain was 3.0 ~ 10.5%. The tensile deformation of A5082 alloys is characterized as typical case of dynamic strain ageing with negative strain rate sensitivity for all conditions, and the tensile strength indicates a similar level regardless of alloy conditions, except only in full annealed condition. The stress-relief annealing on A6060 alloys can induce practical decrease in strength level of over approximately 100 MPa without any ductility loss, compared to as-rolled condition, while a full annealed and aged condition leads remarkable strengthening effect with the decrease of tensile elongation. Additionally, the bake hardenability of A5082 alloy by strain ageing indicates a negative dependence upon the increase of pre-strain, while A6060 alloy exhibits a positive sign even in low level relatively compared with conventional SPCC.

• Polymer(Korea)
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• v.34 no.6
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• pp.579-587
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• 2010

To investigate the properties of PET films, PET films were extruded at various temperature above $T_m$ and quenched at $18^{\circ}C$ for amorphous sheet, and stretched along a direction defined as the machine direction (MD) with a transverse direction (TD) above $T_g$ at various stretching ratios and then annealed at various temperatures produced by SKC PET line. Thermal shrinkage of MD and TD increased with decreasing annealing temperature and extruding temperature, and increasing stretching ratio. The degree of crystallinity, density, heat of fusion (${\Delta}H$) and pre-melting point ($T_m'$) increased with increasing annealing temperature and extruding temperature. Number average molecular weight ($M_n$) and intrinsic viscosity decreased with increasing extruding temperature. Tensile strength and modulus increased with increasing stretching ratio, however decreased with increasing annealing temperature. Reflective index of both stretching and thickness direction increased with increasing stretching ratio and annealing temperature.

• Korean Journal of Materials Research
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• v.24 no.2
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• pp.116-122
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• 2014

$Bi_2Sr_2CaCu_2O_x$(Bi-2212) and $Bi_2Sr_2Ca_2Cu_3O_y$(Bi-2223) high-Tc superconductors(HTS) have been manufactured by plasma spraying, partial melt process(PMP) and annealing treatment(AT). A Bi-2212/2223 HTS coating layer was synthesized through the peritectic reaction between a 0212 oxide coating layer and 2001 oxide coating layer by the PMP-AT process. The 2212 HTS layer consists of whiskers grown in the diffusion direction. The Bi-2223 phase and secondary phase in the Bi-2212 layer were observed. The secondary phase was distributed uniformly over the whole layer. As annealing time goes on, the Bi-2212 phase decreases with mis-orientation and irregular shape, but the Bi-2223 phase increases because a new Bi-2223 phase is formed inside the pre-existing Bi-2212 crystals, and because of the nucleation of a Bi-2223 phase at the edge of Bi-2212 crystals by diffusion of Ca and Cu-O bilayers. In this study the spray coated layer showed superconducting transitions with an onset Tc of about both 115 K, and 50 K. There were two steps. Step 1 at 115 K is due to the diamagnetism of the Bi-2223 phase and step 2 at 50 K is due to the diamagnetism of the Bi-2212 phase.

• Journal of IKEEE
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• v.25 no.1
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• pp.64-68
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• 2021

We demonstrate an effect of annealing temperature on imprinting process of BiLaO thin film for liquid crystal alignment. BiLaO prepared sol-gel process was deposited by spin coating on a glass substrate, and then transferred to a pre-fabricated aligned pattern which is fabricated on a silicon wafer by laser interference lithography. Thin film was annealed at different temperature of 100, 150, 200, and 250 ℃. From the polarized optical microscopy analysis, the liquid crystal orientation was not uniform at the annealing temperature of 200 ℃ or lower and the uniform liquid crystal alignment characteristics were confirmed at the annealing temperature of 250 ℃. From atomic force microscopy, the pattern was not transferred at a temperature of 200 ℃ or lower. In contrast, the pattern was transferred at 250 ℃. Anisotropy of the thin film was obtained by the alignment pattern transferred at a temperature of 250 ℃, and the liquid crystal molecules could be evenly oriented on the thin film. Therefore, it was confirmed that the liquid crystal alignment process by the imprinting process of the BiLaO oxide film was affected by the annealing temperature.

• 한국초전도학회:학술대회논문집
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• v.13
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• pp.87-87
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• 2003