• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.395-397
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• 2002

Dielectric thin films of Pb$\_$0.72/La$\_$0.28/Ti$\_$0.93/O$_3$(PLT(28)) have been deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film. Structural properties including dielectric constant, and ferroelectric characteristics of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step process including pre-annealing treatment has a strong (111) orientation. However, the films deposited by using single-step process with hydrogen annealing process shows the smallest grain size.

• 한국재료학회지
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• 제18권4호
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• pp.204-210
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• 2008

$1.5\;{\mu}m$-thick copper films deposited on silicon wafers were successfully bonded at $415^{\circ}C$/25 kN for 40 minutes in a thermo-compression bonding method that did not involve a pre-cleaning or pre-annealing process. The original copper bonding interface disappeared and showed a homogeneous microstructure with few voids at the original bonding interface. Quantitative interfacial adhesion energies were greater than $10.4\;J/m^2$ as measured via a four-point bending test. Post-bonding annealing at a temperature that was less than $300^{\circ}C$ had only a slight effect on the bonding energy, whereas an oxygen environment significantly deteriorated the bonding energy over $400^{\circ}C$. This was most likely due to the fast growth of brittle interfacial oxides. Therefore, the annealing environment and temperature conditions greatly affect the interfacial bonding energy and reliability in Cu-Cu bonded wafer stacks.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.263-263
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• 2010

High temperature annealing is required to synthesize graphene using CVD. When thin metal catalyst is used for the synthesis, the high temperature pre-annealing makes the thin catalyst highly agglomerated. We investigated the agglomeration effect on the shape of the synthesized graphene. It is found that high temperature annealing makes randomly distributed many hole or blister on metal catalyst, and the synthesized graphene features floral pattern around the hole. The floral patterns of graphene turned out to be multi-layers and higher D peaks in raman spectrum.

• 한국자기학회지
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• 제5권5호
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• pp.507-510
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• 1995

A heat-treatment method of pre-annealing and then flash annealing(FA) has been used to improve the soft magnetic properties of nanocrystalline $Fe_{76}CuSi_{13}B_{10}$ and $Fe_{74}CuNb_{3}Si_{12}B_{10}$ alloys. Outstanding magnetic properties of nanocrystalline $Fe_{74}CuNb_{3}Si_{12}B_{10}$ alloy were attained by flash-annealing in air after annealed at $500^{\circ}C$ for 0.5hr below the crystallization temperature. The same results were obtained for $Fe_{74}CuSi_{13}B_{10}$ alloy. The measurment of relief of stress and X-ray diffraction were used to analyze the effect of flashannealing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.370-373
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• 1999

Si direct bonding (SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on- pre treatment conditions in Si wafer direct bonding, The paper resents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, applied pressure and annealing temperature(200~ 100$0^{\circ}C$) after pre-bonding. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively, Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding(Min 2.4kgf/$\textrm{cm}^2$~ Max : 14.kgf/$\textrm{cm}^2$)

• Journal of Information Display
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• 제11권3호
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• pp.113-118
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• 2010

The effect of hydrogen in the alumina gate insulator on the bottom gate oxide thin film transistor (TFT) with an InGaZnO film as the active layer was investigated. TFT with more H-containing alumina films (TFT A) fabricated via atomic layer deposition using a water precursor showed higher stability under positive and negative bias stresses than that with less H-containing alumina deposited using ozone (TFT B). While TFT A was affected by the pre-vacuum annealing of GI, which resulted in $V_{th}$ instability under NBS, TFT B did not show a difference after the pre-vacuum annealing of GI. All the TFTs showed negative-bias-enhanced photo instability.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.105-108
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• 2003

Long length of Bi-2223 superconducting wires were fabricated by stacking, drawing process with different precursor owders and different heat-treatment histories. The precursor powders were 2 kinds of Pb content. And a part of the tapes were experienced pre-annealing process which caused tetragonal structure of Bi-2212 phase to orthorhombic structure of it was during drawing process. We confirmed the transformation of Bi-2212 phase from tetragonal structure to orthorhombic structure and reduction of second phases. We designed and made a continuous Ic measurement system for Bi-2223/Ag HTS tape. We could achieve best Ic of 65 A at the Bi-2223/Ag tape using low Pb content of precursor powder and experienced pre-annealing process.

• 대한전자공학회논문지SD
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• 제41권8호
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• pp.31-36
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• 2004

본 논문에서는 UV 처리와 BOE 세정을 이용하여 레이저 어닐링 전의 실리콘 표면에 자연 산화막을 제거하여 다결정 실리콘 TFT의 신뢰성을 향상시키는 방법을 제안하였다. 전처리 공정이 다결정 실리콘의 표면 거칠기에 미치는 영향을 AFM으로 측정하였으며, 다결정 실리콘 TFT의 전기적 특성인 스위칭 특성과 항복특성을 대형 유리기판의 위치와 전처리의 유무에 대해서 조사하였다.

• 생명과학회지
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• 제10권2호
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• pp.182-187
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• 2000

The optimized RAPD-PCR conditions, which can be utilized as a basic information for the analysis of the genetic characteristics were investigated with four onion varieties, named Changryungdaego, Yeoeuijuhwang, Yakwangju, and Dabonghwang using Operon primers, OPR01 (TGCGGGTCCT) and OPZ20 (ACTTTGGCGG). We tested several concentrations of DNA, primer, and MgCl2, annealing temperature, number of PCR cycle, and presence/absence of pre-heating time at the begining of PCR reation in the 25${mu}ell$ volume. The best RAPD profiles were obtained using 50ng of DNA, 5mM of primer, 1.5mM of MgCl2, 45$^{\circ}C$ of annealing temperature and an absence of pre-heating time. An establishment of the stable and reproducible RAPD-PCR conditions are expected to be useful for the subsequent RAPD-related investigation, such as genetic characterization of the onion strains, re-establishment of phylogenetic relationships and development of new varieties.

• Computers and Concrete
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• 제11권3호
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• pp.253-270
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• 2013

The aim of the present paper is to show the application of optimization strategies for the cost of beams in reinforced concrete buildings and to propose pre-sizing parameters. In order for these goals to be met, an optimization software program was developed. The program combines the analysis of structures by the grid model, reinforced concrete sizing, and the simulated annealing optimization heuristic. Sizing is compliant with the NBR 6118 (2007) Brazilian standard, according to which flexural, shearing, torsion, and web reinforcements and serviceability limit states (deflection and crack width limitation) are checked. Besides the dimensions of the situations mentioned above, the influence the cost of each material (steel, concrete and formwork) has on the overall cost of structures was also determined.