• Current Photovoltaic Research
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• 제10권2호
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• pp.39-48
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• 2022

A Se-containing Cu/SnSe₂/ZnSe precursor was employed to introduce S to the precursor to form Cu₂ZnSn(S,Se)₄ (CZTSSe) film. The morphology of CZTSSe films strongly varied with two different pre-annealing environments: S and N₂. The CZTSSe film with S pre-annealing showed a dense morphology with a smooth surface, while that with N₂ pre-annealing showed a porous film with a plate-shaped grains on the surface. CuS and Cu₂Sn(S,Se)₃ phases formed during the S pre-annealing stage, while SnSe and Cu₂SnSe₃ phases formed during the N₂ pre-annealing stage. The SnSe phase formed during N₂ pre-annealing generated SnS₂ phase that had plate shape and severely aggravated the morphology of CZTSSe film. The power conversion efficiency of the CZTSSe solar cell with S pre-annealing was low (1.9%) due to existence of Zn(S.Se) layer between CZTSSe and Mo substrate. The results indicated that S pre-annealing of the precursor was a promising method to achieve a good morphology for large area application.

• Progress in Superconductivity
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• 제5권2호
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• pp.124-127
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• 2004

Many of research efforts have been focused on the improvement of critical current density (Jc) of silver-sheathed Bi-2223 tapes far practical applications. In this study, the transformation of Bi-2212 phase was investigated, which was transformed to orthorhombic from tetragonal through pre-annealing during powder packing and drawing process. The relationship between hardness of Bi-2212 orthorhombic phase and workability of Bi-2223/Ag tape was investigated. Bi-2223 superconducting wires with 55 filaments were fabricated by stacking and drawing process with different heat-treatment histories. Before rolling process, round wires were pre-annealing at 76$0^{\circ}C$ and in a low oxygen partial pressure. We confirmed that pre-annealing step was to transform to Bi-2212 orthorhombic structure from Bi-2212 tetragonal structure and to reduce the formation of second phases. However the breakages were created at Ag-alloy clad during rolling for pre-annealed Bi-22231Ag tapes. Several pre-annealing scenarios were introduced to reduce the breakages during rolling process. Microstructure and critical current density of pre-annealed Bi-2223 superconducting tapes were investigated. We could achieve proper pre-annealing conditions for Ag-alloy clad Bi-2223 superconducting tapes.

• Tribology and Lubricants
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• 제37권2호
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• pp.62-70
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• 2021

The problem with intermetallics coating using the heat of molten casting is that the heat generated during combustion synthesis dissolves the coating and the substrate metal. This study investigates whether pre-annealing before synthesis can control the reaction heat, with the aim of Ni₃Al coating on the casting surface. Therefore, the effects of the annealing temperature and time on the combustion synthesis behavior of the powder compact of Ni-25at%Al after annealing were investigated. As results, the reaction heat when synthesized decreased as the annealing temperature was high and the annealing time was longer. This was attributed to the fact that Al was diffused to Ni particles during low temperature annealing and intermediate Ni-Al compounds were formed during high temperature annealing. After combustion synthesis, however, it was found that their microstructures were almost identical except for the amount of intermediate intermetallics. Furthermore, an annealing temperature above 450℃, at which intermediate compounds begin to form, is needed to prevent the dissolving problem during synthesizing. The intermetallics synthesized after annealing at higher temperature and prolonger annealing time showed a good wear resistance. This might be because much intermediate intermetallics of high hardness were remained in the microstructure.

• 한국재료학회지
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• 제14권8호
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• pp.552-557
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• 2004

Thin Ni-B films, 1 ${\mu}m$ thick, were electrolessly deposited on Cu bus electrode fabricated by electro deposition. The purpose of these films is to encapsulate Cu electrodes for preventing Cu oxidation and to serve as a diffusion barrier against copper contamination of dielectric layer in AC-plasma display panel. The layers were heat treated at $580^{\circ}C$(baking temperature of dielectric layer) with and without pre-annealing at $300^{\circ}C$($Ni_{3}B$ formation temperature) for 30 minutes. In the layer with pre-annealing, amount of Cu diffusion was lower about 5 times than that in the layer without pre-annealing. The difference of Cu concentration could be attributed to Cu diffusion before $Ni_{3}B$ formation at grain boundaries. However, the diffusion behavior of the layer with pre-annealing was similar to that of the layer without pre-annealing after $Ni_{3}B$ formation. With increasing annealing time, Cu concentration of both layers increased due to grain growth.

• Journal of Electrical Engineering and Technology
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• 제12권6호
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• pp.2353-2358
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• 2017

A femtosecond laser pre-annealing process based on indium zinc oxide (IZO) thin-film transistors (TFTs) is fabricated. We demonstrate a stable pre-annealing process to analyze surface structure change of thin films, and we maintain electrical stability and improve electrical performance. Furthermore, dynamic electrical characteristics of the IZO TFTs were investigated. Femtosecond laser pre-annealing process-based IZO TFTs exhibit a field-effect mobility of $3.75cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $1.77{\times}10^5$, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. And the IZO-based inverter shows a fast switching behavior response. From this study, IZO TFTs from using the femtosecond laser annealing technique were found to strongly affect the electrical performance and charge transport dynamics in electronic devices.

• 대한금속재료학회지
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• 제49권10호
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• pp.790-796
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• 2011

To reduce the heat released during intermetallic reaction, Ni-50at%Al powder compact has been previously annealed at several conditions before the reaction. The effects of the pre-annealing conditions on the reaction synthesis process have been investigated. Experimental results show that the heat released during the reaction synthesis decreased proportionally with increase of the pre-annealing temperature and duration time. The reaction duration period was significantly increased when the intermetallics were formed in the powder compact during the pre-annealing. This was attributed to the fact that the reaction occurred by solid-state diffusion between the un-reacted elemental atoms and that the $NiAl_3$ phase formed predominantly during pre-annealing.

• 한국초전도ㆍ저온공학회논문지
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• 제5권1호
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• pp.31-34
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• 2003

Bi-2223 superconducting wires with 55 filaments were fabricated by stacking, drawing process with different heat-treatment histories. Two kinds of powders were prepared. One was pre-annealed at 760-820 $^{\circ}C$ and low oxygen partial pressure, and the other was only calcined state. Before rolling process, round wires were pre-annealed at 760 -820 $^{\circ}C$ and in a low oxygen partial pressure. We confirmed that pre-annealing step was to transform Bi-2212 orthorhombic structure from Bi-2212 tetragonal structure and to reduce the formation of second phases at superconducting wire. However Bi-2223 phases were formed at higher pre-annealing temperature. Bi-2223 conductor was needed frequently annealing at low temperature because pre-annealing at precursor powder brought about decrease in workability. We could achieve highest Je of 6500 A/$\textrm{cm}^2$ at the tape using Bi-2212 orthorhombic phase by introduced slightly overheating at the 1st sintering process.

• 한국전기전자재료학회논문지
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• 제16권3호
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• pp.190-194
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• 2003

Dielectric thin films of (P $b_{0.72}$,L $a_{0.28}$) $Ti_{0.93}$ $O_3$ (PLT(28)) have been deposited on Pt(111)/Ti/ $SiO_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition Processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. We have tried to form the film by a two-step deposition process In order to improve electrical property. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film and to reduce the leakage current characteristics. Structural properties and electrical properties including dielectric constant, ferroelectric characteristics, and leakage current of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step Process including pre-annealing treatment has a strongly(111) orientation. However, the films deposited by using single -step process with hydrogen annealing process show the smallest grain size. The film deposited by using two-step process including pre-annealing treatment shows the leakage current density of below 10$^{-7}$ A/c $m^2$ for the field of smaller than 100 kV/cm. However, the films deposited by using single-step process with hydrogen annealing process and pre-annealing process show worse leakage current density than the film deposited by using two-step process including pre-annealing treatment.tment.

• Journal of Advanced Marine Engineering and Technology
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• 제39권1호
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• pp.81-85
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• 2015

본 연구에서는 Poly (3-hexylthiophene-2,5-diyl) (P3HT):[6,6]-Phenyl C61 butyric acid methyl ester (PCBM)과 GaN를 이용하여 유무기 하이브리드 광전변환소자를 제작함에 있어서, P3HT:PCBM 활성층의 열처리가 소자의 단락전류밀도에 미치는 영향을 알아보았으며 이때 유기물의 농도와 혼합비율을 달리 하였다. 유기물 각각의 층을 코팅하여 층을 만들 때마다 열처리 한 경우, 즉 pre-annealing샘플과 pre-annealing 과정을 거쳐 제작된 소자 전체를 한 번 더 열처리하여 즉 post-annealing까지 행한 샘플을 비교하였다. 그 결과 post-annealing한 샘플이 더 높은 단락전류밀도의 값을 가졌고 이때 P3HT와 PCBM은 1wt%와 1:1 혼합비율에서 좋은 열처리 효과를 나타내었다.

• 전기화학회지
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• 제14권3호
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• pp.125-130
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• 2011

본 연구에서는 텅스텐 금속박막을 $200^{\circ}C$에서부터 $600^{\circ}C$의 온도 구간에서 전열처리 (Preannealing) 한 후에, 빛의 조사 유무에 따라 양극산화를 진행하여 생성된 텅스텐 산화물의 표면과 두께에 대해 관찰하였다. 결과적으로 6시간의 동일한 반응시간 동안, $400^{\circ}C$에서 전열처리 한 후에 빛의 조사 없이 양극산화 하였을 때, $1.83{\mu}m$ 두께의 텅스텐 산화물을 제조할 수 있는 것을 발견하였다. 더욱이 전열처리를 하게 되면 더 두꺼운 산화물을 제조 할 수 있으나, 빛을 조사하게 되면 전열처리에 의해 생성된 산화물을 결정화시켜 오히려 산화물 성장에 방해가 되었다. 이러한 차이점에 대해 결정구조 및 메커니즘에 근거하여 설명하였다.