• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.5
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• pp.639-642
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• 2013

In this paper, proposed NED(nuclear event detectors) for detection of a transient radiation. Nuclear event detector was blocked of power temporary for defence of critical damage at a electric device when a induced transient radiation. Conventional NED consist of BJT, resistors and capacitors. The NED supply voltage of 5V and MCM(Multi Chip Module) structures. The proposed NED were designed for low supply voltage using 0.18um CMOS process. The response time of proposed NED was 34.8ns. In addition, pulse radiation experiments using a electron beam accelerator, the output signal has occurred.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.601-607
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• 2015

A set of novel silicon controlled rectifier (SCR) devices' characteristics have been analyzed and verified under the electrostatic discharge (ESD) stress. A ring-shaped diffusion was added to their anode or cathode in order to improve the holding voltage (Vh) of SCR structure by creating new current discharging path and decreasing the emitter injection efficiency (${\gamma}$) of parasitic Bipolar Junction Transistor (BJT). ESD current density distribution imitated by 2-dimensional (2D) TCAD simulation demonstrated that an additional current path exists in the proposed SCR. All the related devices were investigated and characterized based on transmission line pulse (TLP) test system in a standard $0.5-{\mu}m$ 24 V CDMOS process. The proposed SCR devices with ring-shaped anode (RASCR) and ring-shaped cathode (RCSCR) own higher Vh than that of Simple SCR (S_SCR). Especially, the Vh of RCSCR has been raised above 33 V. What's more, their holding current is kept over 800 mA, which makes it possible to design power clamp with SCR structure for on chip ESD protection and keep the protected chip away from latch-up risk.

• Proceedings of the KIEE Conference
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• 2000.07d
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• pp.3124-3126
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• 2000

The application of IR(Infrared) communication is very wide and IR receiver has become a standard of home entertainment. A preamplifier with single 5V supply was designed for IR receiver IC. To operate at long distance, receiver IC should have high gain and low noise characteristic. To provide constant output signal magnitude, independent of transciever distance, gain limiting stage is needed. And to cut-off DC noise component effectively, large resistance and capacitance are required. Transimpedance type preamplifier, and diode limiting amplifier, and current limiting amplifier were designed. It is another function of current limiting amplifier that transforms single input signal to differential output signal. Using AMS BiCMOS model, both BJT version and MOS version was designed. Total power consumption is O.lmW, and IC size is $0.3mm^2$