• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.4
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• pp.443-450
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• 2016

The linearization technique for low noise amplifier (LNA) has been implemented in standard $0.18-{\mu}m$ BiCMOS process. The MOS-BJT derivative superposition (MBDS) technique exploits a parallel LC tank in the emitter of bipolar transistor to reduce the second-order non-linear coefficient ($g_{m2}$) which limits the enhancement of linearity performance. Two feedback capacitances are used in parallel with the base-collector and gate-drain capacitances to adjust the phase of third-order non-linear coefficients of bipolar and MOS transistors to improve the linearity characteristics. The MBDS technique is also employed cascode configuration to further reduce the second-order nonlinear coefficient. The proposed LNA exhibits gain of 9.3 dB and noise figure (NF) of 2.3 dB at 2 GHz. The excellent IIP3 of 20 dBm and low-power power consumption of 5.14 mW at the power supply of 1 V are achieved. The input return loss ($S_{11}$) and output return loss ($S_{22}$) are kept below - 10 dB and -15 dB, respectively. The reverse isolation ($S_{12}$) is better than -50 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.2
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• pp.174-180
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• 2008

The pulsed amplifier which switches the main supply voltage of RF amplifier according to input pulse signal has good efficiency and low noise level between pulses. And it has simple structure because it doesn't need a pulse modulator at input port. The pulsed amplifier using the conventional switching circuit has slow fall time compared to rise time. We proposed the novel switching circuit for improving the fall time of pulsed amplifier The proposed switching circuit is implemented by replacing FET of conventional circuit with BJT. As a result of appling this circuit to RF pulsed amplifier, the rise and fall time are 5.7 ns and 21.9 ns at 27 dBm output power, respectively.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.937-940
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• 2005

In this paper, the design of high current and high performance Regulatior IC using BCD Technology are presented. We design the 5A class regulator IC including the VDMOS Pass Tr. of N-sink array structure. Also, to obtain the high current and low power characteristics, the PMOS and BJT device are adapted for the Pass Tr. It is shown that simulation results of Regulator IC with VDMOS Pass Tr. have the Iout=4.5092A, LDO=7.3mV.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.815-818
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• 1998

The Insulated Gate Bipolar Transistor has the characteristics of MOSFET and BJT. The characteristics of proposed device exhibit high speed switching, the voltage controlled property, and the low ON resistance. This hybrid device has been used and developed continuously in the power electronic engineering field. We can simulate many IGBT circuits, such as the motor drive circuit, the switching circuits etc, with PSpice. However, some problems in PSpice is that the IGBT is old-fashioned and is very difficult to get it. In this paper, the IGBT in PSpice is considered as the basic structure. We changed the valuse of base width, gate-drain overlaping area, device area, and doping concentration, then calculated MOS transconductance, ambipolar recombination lifetime etc. Using this resultant parameter, we could predict the transient response characteristicsof IGBT, for examplex, voltage overshoot, the rising curve of voltage, and the falling curve of current.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.26-30
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• 2001

In this paper, transient characteristics of IGBT has been analytically solved to express the excess minority carrier distribution in active base region and the output voltage. Non-Punch Through(NPT) structure has been selected to prove the validity of the model. It is based on the equivalent circuit of MOSFET which supplies a low gain and a high level injection to the base of BJT. None of the quasi static conditions have been assumed to trace the transient characteristics. The basic elements of the model have been derived from the ambipolar transport theory. Theoretical predictions of the output voltages have been obtained with different lifetimes and compared with experimental and theoretical results available in the literature. From the analytical approach, good agreement has been obtained to provide reliable and fast output of the device.

• ETRI Journal
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• v.27 no.4
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• pp.449-452
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• 2005

The electrical characteristics of solid state devices such as the bipolar junction transistor (BJT), metal-oxide semiconductor field-effect transistor (MOSFET), and other active devices are altered by impinging photon radiation and temperature in the space environment. In this paper, the threshold voltage, the breakdown voltage, and the on-resistance for two kinds of MOSFETs (200 V and 100 V of $V_{DSS}$) are tested for ${\gamma}-irradiation$ and compared with the electrical specifications under the pre- and post-irradiation low dose rates of 4.97 and 9.55 rad/s as well as at a maximum total dose of 30 krad. In our experiment, the ${\gamma}-radiation$ facility using a low dose, available at Korea Atomic Energy Research Institute (KAERI), has been applied on two commercially available International Rectifier (IR) products, IRFP250 and IRF540.

• The Magazine of the IEIE
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• v.20 no.9
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• pp.82-89
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• 1993

새로운 개념의 인버터로서 종래의 인버터의 직류부에 공진회로를 설치하여 직류와 교류를 공진 DC 링크로 접속하는 방식이다. 공진동작으로 링크부의 전압이 명이되는 것을 이용하여 인버터의 PSD를 ZVSAT킨다. (PSD = Power Switching Device)전압공진형은 ZVS가 가능하나 어느 정도의 전류를 OFF할 필요가 있기 때문에 비교적 TURN OFF의 속도가 빠른 MOSFET, SIT, IGBT등의 PSD를 이용하여 수십 kHz의 스위칭 을 한다. 여기에 대하여 전류공진형은 ZCS(Zero Current State)가 가능하게 되고 OFF하는 전류도 작게되기 때문에 TURN OFF가 늦은 BJT와 GTO. IGBT 싸이리스터 등의 TURN OFF 시간이 꾀 짧은 것들을 이용하여 수십 kHz의 스위칭이 가능하게 된다. 이들 PSD는 대용량화에 적합하여 대용량 전력변환기에의 적용이 시도되고 있다. 여기에서는 이들 인버터에 관하여 기본적인 동작원리와 제어방식을 중심으로 설명한다. 또한 공진형 방식의 결점인 전압과 전류의 피크치를 저감하는 전압 Clamp식에 관하여도 기술한다.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.509-512
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• 2004

This paper proposed a new solid State Relay(SSR) structure that can replace the conventional SSR as a power IC. The photodiode arrays, the main part of this structure, were designed and integrated in the same power It chip with the output parts, LDMOSFET and BJT, on a SOI substrate. The fabrication of this input part shared the same output LDMOSFET fabrication processs, except the additional deposition of Silicon nitride($Si_3N_4$) for the photo-detection part. According to LED illumination intensites and photo detecting areas, we could obtain voltage of 0.49V ${\~}$0.52V and current of 5.5uA ${\~}$ 108uA respectively from the fabricated unit photodiode. The maximum value of the voltage and the current we could obtain from the photodiode array were 3.58V and 24.4uA respectively, and the voltage was enough to operate the output LDMOSFET

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.3
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• pp.381-389
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• 2015

A fully integrated multistandard multiband CMOS mobile TV tuner with small silicon area and low power consumption is proposed for receiving multiple mobile digital TV signals and FM signal. In order to reduce the silicon area of the multistandard multiband receiver, other RF front-end circuits except LNAs are shared and a local oscillator (LO) signal generation architecture with a single VCO for a frequency synthesizer is proposed. To reduce the low frequency noise and the power consumption, a vertical NPN BJT is used in an analog baseband circuits. The RF tuner IC is implemented in a $0.18-{\mu}m$ CMOS technology. The RF tuner IC satisfies all specifications for DVB-H/T, T-DMB, and ISDB-T with a sufficient margin and a successful demonstration has been carried out for DVB-H/T, T-DMB, and ISDB-T with a digital demodulator.

• Korea Science and Art Forum
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• v.20
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• pp.421-428
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• 2015

Electronic/hybrid car and electroplating rectifier should have switching devices such as SCR, MOSFET, IGBT. And those switching devices should be operated by gate driver. In this paper, we propose high power gate driver that contains H-Bridge using 4 BJTs. H-Bridge and transformer generate isolate power. And gate control signal is transferred to isolated one by photo coupler and operate real switching device. We designed H-Bridge and 555-Timer by PSpice simulation and manufactured real product. Finally we succeed to operate 27V 50,000A electroplating rectifier using proposed gate driver.