• Journal of IKEEE
• /
• v.18 no.3
• /
• pp.335-340
• /
• 2014

Recently, LED (Light Emitting Diode) becomes to be useful to apply for the lightening sources in electric systems and the lightening equipment since the power is less consumed with high efficiency, and the size and the weight of LED are small and light, respectively. The LED is controlled with constant current and SMPS (Switching Mode Power Supply). It is necessary for the LED manufacturer to secure the fundamental technology of designing LED chip, and to study the methodology to improve the power factor (PF) and to design the operational circuit for the development of LED to reduce the power loss in the application of LED lightening. The direct AC (Alternating Current) LED driving circuit, HV9910, is widely used in the industry field. In this paper, it is to evaluate the improved methodology for the power factor and efficiency through simulations when PFC (Power Factor Correction) and Noise Filter are added to HV9910.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.25 no.9
• /
• pp.895-902
• /
• 2014

This paper presents a 2-stage CMOS power amplifier for the 1.75 GHz band using a $0.18-{\mu}m$ CMOS process. Using ADS simulation, a power gain of 28 dB and an efficiency of 45 % at an 1dB compression point of 27 dBm were achieved. The implemented CMOS power amplifier delivered an output power of up to 24.8 dBm with a power-added efficiency of 41.3 % and a power gain of 22.9 dB. For a 16-QAM uplink LTE signal, the PA exhibited a power gain of 22.6 dB and an average output power of 23.1 dBm with a PAE of 35.1 % while meeting an ACLR(Adjacent Channel Leakage Ratio) level of -30 dBc.

• Clean Technology
• /
• v.7 no.3
• /
• pp.203-214
• /
• 2001

A silicon oxide cleaning characteristic and its mechanism were studied in RF plasma cleaning system with various gases such as $CHF_3$, $CF_4$, Argon, oxygen and mixing gas. The experimental parameters - working pressure (100 mTorr), RF power (300 W, 500 W), electrode distance (5cm, 8cm, 11.5cm), cleaning time (90, 180 seconds), gas flow (50 sccm) were fixed to compare cleaning efficiency by gas types. The results were as follows. First, the argon plasma is retaining only physical sputtering effect and etch rate was low. Second, the oxygen plasma showed good cleaning efficiency in electrode distace of 5cm, 300W, 180secs, but surface roughness increased. Third, $CF_4$ Plasma could get the best cleaning efficiency. Fourth, $CHF_3$ plasma could know that addition gas that can lower the CFx/F ratio need. We could not get good cleaning efficiency in case of added argon to $CHF_3$. But, we could get good cleaning efficiency in case added oxygen.

• Journal of IKEEE
• /
• v.1 no.1 s.1
• /
• pp.164-175
• /
• 1997

In this paper, the CE-OQPSK that has constant envelope was designed for applying PSK to the nonlinear amplifier so as to improve power efficiency. For this realization. ROM and D/A converter that have relative low power consumption were used. As a result of comparing the PSD (Power spectrum density) of CE-OQPSK with that of conventional OQPSK through simulation for estimating the performance. In case of correlation factor ${\alpha}$ = 0.707. the improvement of bandwidth efficiency of 5% and 20% is achieved in the main lobe and the sidelobe, respectively. And, in case additional bandwidth-limiting-filter is added, it can be shown that the PSD of CE-OQPSK meet the FCC wireless LAN spectrum specification.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.27 no.5
• /
• pp.391-396
• /
• 2022

In this study, a new voltage-balancing dual-active bridge converter that integrates a DAB converter with a voltage balancer is proposed for a bipolar DC distribution system. The proposed converter is configured to connect two loads to the transformer secondary center tap of the DAB converter, and no additional components are added. The proposed converter has the same operation as the conventional DAB converter, and it makes both output voltages similar. Moreover, the imbalanced current offset between the two loads is bypassed only on the secondary side of the transformer. Consequently, the proposed converter integrates a voltage balancer without any additional components, and no additional loss occurs in the corresponding components. Thus, high efficiency and high power density can be achieved. The feasibility of the proposed converter is verified using 3 kW prototypes under 380 V input and 190/190 V output conditions.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.27 no.10
• /
• pp.892-899
• /
• 2016

In this paper, an X-band 50 W internally matched power amplifier is designed and fabricated using an $80{\times}150{\mu}m$ GaN HEMT that is developed by the $0.25{\mu}m$ GaN HEMT process of ETRI. The optimum source and load impedances are experimentally extracted from the loadpull measurement using impedance-transform-prematching circuits, and the transistor performance is predicted. The power performance of the internally matched power amplifier, whose matching circuits are fabricated on a substrate with ${\varepsilon}_r$ of 10.2, is measured under the pulsed mode of $100{\mu}s$ pulse period and 10 % duty cycle, and the best output power of 47.46 dBm(55.5 W) and the power-added efficiency of 46.6 % are obtained at 9.2 GHz. The output power of 47~47.46 dBm(50~55.7 W) is measured in 9.0~9.5 GHz, and the power-added efficiency is measured to be greater than 43 % in 9.0~9.3 GHz and above 36 % in 9.4~9.5 GHz.

• Journal of electromagnetic engineering and science
• /
• v.17 no.2
• /
• pp.105-107
• /
• 2017

The self-biasing circuit through a feedback resistor is applied to a gallium nitride (GaN) distributed power amplifier (PA) monolithic microwave circuit (MMIC). The self-biasing circuit is a useful scheme for biasing depletion-mode compound semiconductor devices with a negative gate bias voltage, and is widely used for common source amplifiers. However, the self-biasing circuit is rarely used for PAs, because the large DC power dissipation of the feedback resistor results in the degradation of output power and power efficiency. In this study, the feasibility of applying a self-biasing circuit through a feedback resistor to a GaN PA MMIC is examined by using the high operation voltage of GaN high-electron mobility transistors. The measured results of the proposed GaN PA are the average output power of 41.1 dBm and the average power added efficiency of 12.2% over the 6-16 GHz band.

• Journal of Communications and Networks
• /
• v.12 no.2
• /
• pp.140-149
• /
• 2010

Green communication is a new paradigm of designing the communication system which considers not only the processing performance but also the energy efficiency. Power control management is one of the approaches in green communication to reduce the power consumption in distributed communication system. In this paper, we propose improved power control schemes for mobile satellite systems with ancillary terrestrial components (ATCs). In order to increase system capacity and reduce the transmitting power of the user's equipment, we propose an efficient channel estimation method consisting of a modified open-loop power control (OLPC) and closed-loop power control (CLPC). The OLPC works well if the forward and reverse links are perfectly correlated. The CLPC is sensitive to round-trip delay and, therefore, it is not effective in a mobile satellite system. In order to solve the above problem, we added monitoring equipment to both the OLPC and CLPC to use information about transmitting power that has not yet been received by the receiver over the satellite/ATC channel. Moreover, we adapted an efficient pilot diversity of both OLPC and CLPC in order to get a better signal to interference plus noise ratio estimation of the received signal.

• Journal of IKEEE
• /
• v.23 no.1
• /
• pp.181-187
• /
• 2019

In this paper, we demonstrated a power amplifier monolithic microwave integrated circuit (MMIC) for X-band radar applications. It utilizes commercial $0.25{\mu}m$ GaN-based high electron mobility transistor (HEMT) technology and delivers more than 20 W of output power. The developed GaN-based power amplifier MMIC has small signal gain of over 22 dB and saturated output power of over 43.3 dBm (21.38 W) in a pulse operation mode with pulse width of $200{\mu}s$ and duty cycle of 4% over the entire band of 9 to 10 GHz. The chip dimensions are $3.5mm{\times}2.3mm$, generating the output power density of $2.71W/mm^2$. Its power added efficiency (PAE) is 42.6-50.7% in the frequency bandwidth from 9 to 10 GHz. The developed GaN-based power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• Proceedings of the KIEE Conference
• /
• 1996.07a
• /
• pp.355-357
• /
• 1996

With the wide-spread use of rectifier in electronic equipments, such problems as electronic components failures or equipment disorders have been occurred due to current harmonics. To overcome these problems, power factor correction circuits employing boost converter have been used. The switching stress of boost converter can be reduced by snubber circuit. Recently, research activities in snubber circuits have been directed to energy recovery snubber for improving the efficiency of power converter. In this study, a new passive snubber circuit which can recover trapped snubber energy without added control is proposed for boost converter The control of boost converter with proposed snubber is the same as the conventional one. In addition, the energy recovery circuit can be implemented with a few passive components. The circuit operation is confirmed through simulation.