• Journal of IKEEE
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• v.18 no.4
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• pp.471-477
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• 2014

In this paper, we propose a low-cost license plate recognition system based on smart cam system using Android. The proposed system consists of a portable device and server. Potable device Hardware consists of ARM Cortex-A9 (S5PV210) processor control unit, a power supply device, wired and wireless communication, input/output unit. We develope Linux kernel and dedicated device driver for WiFi module and camera. The license plate recognition algorithm is consisted of setting candidate plates areas with canny edge detector, extracting license plate number with Labeling, recognizing with template matching, etc. The number that is recognized by the device is transmitted to the remote server via the user mobile phone, and the server re-transfer the vehicle information in the database to the portable device. To verify the utility of the proposed system, user photographs the license plate of any vehicle in the natural environment. Confirming the recognition result, the recognition rate was 95%. The proposed system was suitable for low cost portable license plate recognition device, it enabled the stability of the system when used long time by using the Android operating system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.9
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• pp.854-864
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• 2016

The use of small drone platform has become a popular topic in these days but its application for SAR operation has been little known due to the burden of the payload implementation. Drone platforms are distinguished from the conventional UAV system by the increased vulnerability to the turbulences, control-errors and poor motion stability. Consequently, sophisticated motion compensation may be required to guarantee the successful acquisition of high quality SAR imagery. Extremely limited power and mass budgets may prevent the use of additional hardwares for motion compensation and the difficulty of SAR focusing is further aggravated. In this paper, we have carried out a feasibility study of mico-SAR drone operation. We present the image acquisition results from the preliminary flight tests and a quality assessment is followed on the experimental SAR images. The in-flight motion errors derived from the unique drone movements are investigated and attempts have been made to compensate for the geometrical and phase errors caused by motions against the nominal trajectory. Finally, the successful operation of drone SAR system is validated through the focussed SAR images taken over test sites.

• Journal of the Korean GEO-environmental Society
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• v.21 no.9
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• pp.25-32
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• 2020

The underground utilities installed under the ground is an important civil engineering structure, such as water supply and sewerage pipes, underground power lines, various communication lines, and city gas pipes. Such underground utilities can be exposed to risk due to external factors such as concentrated rainfall and vehicle load, and it is important to select and construct an appropriate backfill material. Currently, a method mainly used is to fill the soil around the underground utilities and compact it. But it is difficult to compact the lower part of the buried pipe and the compaction efficiency decreases, reducing the stability of the underground utilities and causing various damages. In addition, there are disadvantages such as a decrease in ground strength due to disturbance of the ground, a complicated construction process, and construction costs increase because the construction period becomes longer, and civil complaints due to traffic restrictions. One way to solve this problem is to use a liquid filler. The liquid filler has advantages such as self-leveling ability, self-compaction, fluidity, artificial strength control, and low strength that can be re-excavated for maintenance. In this study, uniaxial compression strength test and fluidity test were performed to characterize the mixed soil using marine clay, stabilizer, and in-situ soil as backfill material. A freezing-thawing test was performed to understand the strength characteristics of the liquid filler by freezing, and in order to examine the effect of the filling materials on the corrosion of the underground pipe, an electrical resistivity test and a pH test were performed.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.1
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• pp.354-372
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• 2020

This study analyzed how North Korean defectors recognized and overcame conflict in the South Korean job culture during the course of entering and settling into South Korea, and the association between their old career and adaptation within their new careers. The study selected 13 employed participants who entered South Korea more than five years ago and experienced working. Interviews were conducted over the course of five years. The topics were analyzed after performing interviews 60 to 120 minutes long by recording and transcribing the recordings and using semi-structured questionnaires for the 13 people. The results reflected the job environment in North Korea, their career background, factors for a successful new life, their constant efforts for employment, the difficult adaption to South Korean life, pursuing job stability, accepting South Korean culture, and career compromises. The results of this study are as follows. First, they undergo difficulty in the course of selecting jobs due to the converted environment from passivity to autonomy. Second, they cannot use their previous job history and they complained about prejudice and the lack of job information. Third, major problems included their lack of adaptability, stress, and loss of economic power. The study suggests that these North Korean defectors undergo an integrated course of cultural learning. Fourth, they were hardly able to adapt. Fifth, they tried to overcome conflicts of job culture according to their personal characteristics.

• Journal of Advanced Marine Engineering and Technology
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• v.38 no.6
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• pp.688-697
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• 2014

In this study, electrode bonding technology needed for high density of rechargeable battery is studied, which is recently researched for electric vehicle, the small leisure vessel. For the alternative overcoming the limit of stacking amount able to be stacked by conventional ultrasonic welding, the low temperature bonding method, eligible for minimum of degeneration of chemical activator on the electrode surface which is generated by thermal effect as well as the increase of conductivity and tension strength caused by electrode bonding using filler metal, not using conventional direct heating on the electrode material method, is studied. Specifically to say, recently used more generally the ultrasonic welding and spot welding method are not usable for satisfying stable electric conductivity and bonding strength when much electrode is stacking bonded. If the electrical power is unreasonably increased for the welding, due to the effect of welding temperature, deformation of electrode and activating material degeneration are caused, and after the last packaging, decline of electrical output and generating heat cause to reduce stability of battery. Therefore, in this study, induction heating system bonding method using high frequency heating and differentiated electrode method using filler metal pre-treatment of hot dipping are introduced.

• Journal of KIISE:Databases
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• v.34 no.2
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• pp.133-140
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• 2007

Flash memory has penetrated our life in various forms. For example, flash memory is important storage component of ubiquitous computing or mobile products such as cell phone, MP3 player, PDA, and portable storage kits. Behind of the wide acceptance as memory is many advantages of flash memory: for instances, low power consumption, nonvolatile, stability and portability. In addition to mentioned strengths, the recent development of gigabyte range capacity flash memory makes a careful prediction that the flash memory might replace some of storage area dominated by hard disks. In order to have overwriting function, one block must be erased before overwriting is performed. This difference results in the cost of reading, writing and erasing in flash memory[1][5][6]. Since this difference has not been considered in traditional buffer replacement technologies adopted in system software such as OS and DBMS, a new buffer replacement strategy becomes necessary. In this paper, a new buffer replacement strategy, reflecting difference I/O cost and applicable to flash memory, suggest and compares with other buffer replacement strategies using workloads as Zipfian distribution and real data.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.189-190
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• 2011

Cu가 기존 배선물질인 Al을 대체함에 따라 resistance-capacitance (RC) delay나 electromigration (EM) 등의 문제들이 어느 정도 해결되었다. 그러나 지속적인 배선 폭의 감소로 배선의 저항 증가, EM 현상 강화 그리고 stability 악화 등의 문제가 지속적으로 야기되고 있다. 이를 해결하기 위한 방법으로 Cu alloy seed layer를 이용한 barrier 자가형성 공정에 대한 연구를 진행하였다. 이 공정은 Cu 합금을 seed layer로 사용하여 도금을 한 후 열처리를 통해 SiO2와의 계면에서 barrier를 자가 형성시키는 공정이다. 이 공정은 매우 균일하고 얇은 barrier를 형성할 수 있고 별도의 barrier와 glue layer를 형성하지 않아 seed layer를 위한 공간을 추가로 확보할 수 있는 장점을 가지고 있다. 또한, via bottom에 barrier가 형성되지 않아 배선 전체 저항을 급격히 낮출 수 있다. 합금 물질로는 초기 Al이나 Mg에 대한 연구가 진행되었으나, 낮은 oxide formation energy로 인해 SiO2에 과도한 손상을 주는 문제점이 제기되었다. 최근 Mn을 합금 물질로 사용한 안정적인 barrier 형성 공정이 보고 되고 있다. 하지만, barrier 형성을 하기 위해 300도 이상의 열처리 온도가 필요하고 열처리 시간 또한 긴 단점이 있다. 본 실험에서는 co-sputtering system을 사용하여 Cu-V 합금을 형성하였고, barrier를 자가 형성을 위해 300도에서 500도까지 열처리 온도를 변화시키며 1시간 동안 열처리를 실시하였다. Cu-V 공정 조건 확립을 위해 AFM, XRD, 4-point probe system을 이용하여 표면 거칠기, 결정성과 비저항을 평가하였다. Cu-V 박막 내 V의 함량은 V target의 plasma power density를 변화시켜 조절 하였으며 XPS를 통해 분석하였다. 열처리 후 시편의 단면을 TEM으로 분석하여 Cu-V 박막과 SiO2 사이에 interlayer가 형성된 것을 확인 하였으며 EDS를 이용한 element mapping을 통해 Cu-V 내 V의 거동과 interlayer의 성분을 확인하였다. PVD Cu-V 박막은 기판 온도에 큰 영향을 받았고, 200 도 이상에서는 Cu의 높은 표면에너지에 의한 agglomeration 현상으로 거친 표면을 가지는 박막이 형성되었다. 7.61 at.%의 V함량을 가지는 Cu-V 박막을 300도에서 1시간 열처리 한 결과 4.5 nm의 V based oxide interlayer가 형성된 것을 확인하였다. 열처리에 의해 Cu-V 박막 내 V은 SiO2와의 계면과 박막 표면으로 확산하며 oxide를 형성했으며 Cu-V 박막 내 V 함량은 줄어들었다. 300, 400, 500도에서 열처리 한 결과 동일 조성과 열처리 온도에서 Cu-Mn에 의해 형성된 interlayer의 두께 보다 두껍게 성장 했다. 이는 V의 oxide formation nergyrk Mn 보다 작으므로 SiO2와의 계면에서 산화막 형성이 쉽기 때문으로 판단된다. 또한, V+5 이온 반경이 Mn+2 이온 반경보다 작아 oxide 내부에서 확산이 용이하며 oxide 박막 내에 여기되는 전기장이 더 큰 산화수를 가지는 V의 경우 더 크기 때문으로 판단된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.256-256
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• 2012

Cu가 기존 배선물질인 Al을 대체함에 따라 resistance-capacitance delay와 electromigration (EM) 등의 문제들이 어느 정도 해결되었다. 그러나 지속적인 배선 폭의 감소로 배선의 저항 증가, EM 현상 강화 그리고 stability 악화 등의 문제가 지속적으로 야기되고 있다. 이를 해결하기 위한 방법으로 Cu alloy seed layer를 이용한 barrier 자가형성 공정에 대한 연구를 진행하였다. 이 공정은 Cu 합금을 seed layer로 사용하여 도금을 한 후 열처리를 통해 $SiO_2$와의 계면에서 barrier를 자가 형성시키는 공정이다. 이 공정은 매우 균일하고 얇은 barrier를 형성할 수 있고 별도의 barrier와 glue layer를 형성하지 않아 seed layer를 위한 공간을 추가로 확보할 수 있는 장점을 가지고 있다. 또한, via bottom에 barrier가 형성되지 않아 배선 전체 저항을 급격히 낮출 수 있다. 합금 물질로는 초기 Al이나 Mg에 대한 연구가 진행되었으나, 낮은 oxide formation energy로 인해 SiO2에 과도한 손상을 주는 문제점이 제기되었다. 최근 Mn을 합금 물질로 사용한 안정적인 barrier 형성 공정이 보고 되고 있다. 하지만, barrier 형성을 하기 위해 300도 이상의 열처리 온도가 필요하고 열처리 시간 또한 긴 단점이 있다. 본 실험에서는 co-sputtering system을 사용하여 Cu-V 합금을 형성하였고, barrier를 자가 형성을 위해 300도에서 500도까지 열처리 온도를 변화시키며 1시간 동안 열처리를 실시하였다. Cu-V 공정 조건 확립을 위해 AFM, XRD, 4-point probe system을 이용하여 표면 거칠기, 결정성과 비저항을 평가하였다. Cu-V 박막 내 V의 함량은 V target의 plasma power density를 변화시켜 조절 하였으며 XPS를 통해 분석하였다. 열처리 후 시편의 단면을 TEM으로 분석하여 Cu-V 박막과 $SiO_2$ 사이에 interlayer가 형성된 것을 확인 하였으며 EDS를 이용한 element mapping을 통해 Cu-V 내 V의 거동과 interlayer의 성분을 확인하였다. PVD Cu-V 박막은 기판 온도에 큰 영향을 받았고, 200도 이상에서는 Cu의 높은 표면에너지에 의한 agglomeration 현상으로 거친 표면을 가지는 박막이 형성되었다. 7.61 at.%의 V함량을 가지는 Cu-V 박막을 300도에서 1시간 열처리 한 결과 4.5 nm의 V based oxide interlayer가 형성된 것을 확인하였다. 열처리에 의해 Cu-V 박막 내 V은 $SiO_2$와의 계면과 박막 표면으로 확산하며 oxide를 형성했으며 Cu-V 박막 내 V 함량은 줄어들었다. 300, 400, 500도에서 열처리 한 결과 동일 조성과 열처리 온도에서 Cu-Mn에 의해 형성된 interlayer의 두께 보다 두껍게 성장했다. 이는 V의 oxide formation energy가 Mn 보다 작으므로 SiO2와의 계면에서 산화막 형성이 쉽기 때문으로 판단된다. 또한, $V^{+5}$이온 반경이 $Mn^{+2}$이온 반경보다 작아 oxide 내부에서 확산이 용이하며 oxide 박막 내에 여기되는 전기장이 더 큰 산화수를 가지는 V의 경우 더 크기 때문으로 판단된다.

• Analytical Science and Technology
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• v.15 no.3
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• pp.236-242
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• 2002

A method was investigated to determine the thickness of coating on steel sheet using rf glow discharge atomic emission spectrometer. The RF gas-jet boosted glow discharge has such salient feature as good pleasure stability and high sputtering efficiency that it was possible to determine the thickness of silicon resin film on zinc electroplated steel. The erosion speed variation is dependent on discharge power, gas flow rate and discharge pressure. therefore determine discharge condition to measure the thickness of coating on steels. The fundamental studies have been carried out to investigate an optimum condition for in-depth analysis and composition of zinc coating on steel. In this study, the calibration curve for thickness determination of silicon resin film was found to be linear in the range of $1000{\sim}3500mg/m^2$ film thickness. The developed rf gas-jet boosted glow discharge was applied to the analysis of zinc coating and silicon resin film on steel made by RIST.