• Journal of Institute of Control, Robotics and Systems
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• v.21 no.12
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• pp.1178-1184
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• 2015

In conventional robotics, charge-coupled device (CCD) and complementary metal-oxide-semiconductor (CMOS) cameras have been utilized for acquiring vision information. These devices have problems, such as narrow optic angles and inefficiencies in visual information processing. Recently, biomimetic vision sensors for robotic applications have been receiving much attention. These sensors are more efficient than conventional vision sensors in terms of the optic angle, power consumption, dynamic range, and redundancy suppression. This paper presents recent research trends on biomimetic vision sensors and discusses future directions.

• Proceedings of the KIEE Conference
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• 2006.10b
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• pp.154-158
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• 2006

The switching-mode power converter has been widely used because of its features of high efficiency and small weight and size. These features are brought by the ON-OFF operation of semiconductor switching devices. However, this switching operation causes the surge and EMI(Electromagnetic Interference) which deteriorate the reliability of the converter themselves and entire electronic systems. This problem on the surge and noise is one of the most serious difficulties in AC-to-DC converter. Random Pulse Width Modulation (RPWM) is peformed by adding a random perturbation to switching instant while output-voltage regulation of converter is performed. RPWM method for reducing conducted EMI in single switch three phase discontinuous conduction mode boost converter is presented. The more white noise is injected, the more conducted EMI is reduced. But output-voltage is not sufficiently regulated. This is the reason why carrier frequency selection topology is proposed. In the case of carrier frequency selection, output-voltage of steady state and transient state is fully regulated. A RPWM control method was proposed in order to smooth the switching noise spectrum and reduce it's level. Experimental results are verified by converter operating at 300v/1kW with $5%{\sim}30%$ white noise input. Spectrum analysis is performed on the Phase current and the CM noise voltage. The former is measured with Current Probe and the latter is achieved with LISN, which are connected to the spectrum analyzer respectively.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.3
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• pp.566-570
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• 2007

The specific electrical, optical and acoustic properties of Zinc Oxide (ZnO) are important for semiconductor process which has many various applications. Piezoelectric ZnO films has been widely used for such as transducers, bulk and surface acoustic-wave resonators, and acousto-optic devices. In this study, we investigated etch characteristics of ZnO thin films in inductively coupled plasma etch system with $BCl_3/Ar$ gas mixture. The etching characteristics of ZnO thin films were investigated in terms of etch rates and selectivities to $SiO_2$ as a function of $BCl_3/Ar$ gas mixing ratio, RF power, DC bias voltage and process pressure. The maximum ZnO etch rate of 172 nm/min was obtained for $BCl_3$ (80%)/Ar(20%) gas mixture. The chemical states on the etched surface were investigated with X-ray photoelectron spectroscopy (XPS).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.257-263
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• 2013

In this paper, Solar, Wind, fuel cell used in a Power conversion devices and industrial inverter motor to increase the efficiency of energy consumption, which is a core part of high-efficiency, high-voltage Trench Gate Field Stop IGBT was studied. For this purpose Planar type NPT IGBT and Planar type Field Stop IGBT have designed a basic structure designed to Trench Gate Field Stop IGBT based on the completed structure by analyzing the energy consumption of electrical characteristics, efficiency is a key part, high-efficiency and high-voltage inverter for industry regarding the optimization design for Trench Gate Field Stop IGBT.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.470-473
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• 2000

The metal-oxide-semiconductor field-effect transistor(MOSFET) has undergone many changes in the last decade in response to the constant demand for increased speed, decreased power, and increased patting density. The devices are scaled down day by day. Therefore, This paper investigates how MOSFET structures influence on transport properties in according to change of channel length and bias and, observes impact ionization between the drain and the gate. This paper proposes three models, i.e., conventional MOSFET, LDD MOSFET and EPI MOSFET. The gate lengths are 0.3$\mu\textrm{m}$ 0.15$\mu\textrm{m}$, 0.075$\mu\textrm{m}$ and scaling factor is λ = 2. We have presented MOSFET's characteristics such as I-V characteristic, impart ionization, electric field, using the TCAD. We have analyzed the adaptive channel and doping influences

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.19 no.6
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• pp.183-189
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• 2019

Despite its low cost, ARM is widely used in smartphones, digital cameras, home network devices, and wireless technologies because of its low power consumption and reliable performance. The domestic memory semiconductor design technology is in the world's highest level, but that of the processor is far less than that, which results in the technology unbalance between the memory and the processor. When designing a processor, exception and interrupt capabilities are requisite, but this is often omitted in the research stage. However, exception processing and interrupts must be included in order for the processor to function fully. In this paper, we design a 32-bit ARMv4 family of processors with exception handling and interrupts using VHDL and verify with ModelSim. As a result, ARM's exception and interrupts are successfully performed.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.469-474
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• 1999

Methods and systems to remove static electricity are requested in the field of industry because the static electricity causes a flammable gas explosion or fire and a reduction of production rate in manufacturing semiconductor devices and so on. This paper is a basic study about a new structure of electrode system to control the quantities of generated ions and to solve the problem of dust attachment to needle electrode. In addition, a new type field controlled electrostatic charge neutralizer was proposed, and it could control the electric field in the end of the needle electrode by controlling the voltage of the third electrode around the tip of the needle electrode. As aresult, it was possible to control the quantities of generated ion by controlling the electric field in the needle electrode with the third electrode, which shows the possibilities to solve the nonequilibrium of generated ions in ac power source and the problem of the dust in the needle electrode.

• Proceedings of the KIEE Conference
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• 1999.07f
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• pp.2597-2600
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• 1999

Semiconductor devices can be series stacked for the application of high voltage switching. It can provide high reliability and long lifetime by the safe design with a reasonable margin. The equal voltage distribution at solid-state switches in series should be guaranteed. Static and dynamic voltage division, over current protection must be considered carefully in the design stage. A fast switching thyristor is a good candidate for the high power pulse applications. A high voltage switching module is designed and tested. Its specifications are working voltage of 70 kV, switching pulse width of 120${\mu}s$, peak switching current of 220A, maximum repetition rate of 200pps. The module can be series connected to get higher working voltage. This paper presents the design details and the test results are compared with expected circuit simulations.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.375-375
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• 2014

Layered semiconductor materials can be a promising candidate for large-area thin film transistors (TFTs) due to their relatively high mobility, low-power switching, mechanically flexibility, optically transparency, and amenability to a low-cost, large-area growth technique like thermal chemical vapor deposition (CVD). Unlike 2D graphene, series of transition metal dichalcogenides (TMDCs), $MX_2$ (M=Ta, Mo, W, X=S, Se, Te), have a finite bandgap (1~2 eV), which makes them highly attractive for electronics switching devices. Recently, 2D $MoS_2$ materials can be expected as next generation high-mobility thin-film transistors for OLED and LCD backplane. In this paper, we investigate in detail the electrical characteristics of 2D layered $MoS_2$ local bottom-gated transistor with the same device structure of the conventional thin film transistor, and expect the feasibility of display application.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.309-309
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• 2012

Heteroepitaxial growth remains as one of the continuously growing interests, because the heterogeneous crystallization on different substrates is a common feature in the fabrication processes of many semiconductor materials and devices, such as molecular beam epitaxy, pulsed laser deposition, sputtering, chemical bath deposition, chemical vapor deposition, hydrothermal synthesis, vapor phase transport and so on [1,2]. By using the R.F. sputtering system, ZnO thin films were deposited on graphene 4 and 6 mono layers, which is grown on 400 nm and 600 nm $SiO_2$ substrates, respectively. The ZnO thin layer was deposited at various temperatures by using a ZnO target. In this experimental, the working power and pressure were $3{\times}10^{-3}$ Torr and 50 W, respectively. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen and argon gas flows were controlled around 5 and 10 sccm by using a mass flow controller system, respectively. The structural properties of the samples were analyzed by XRD measurement. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system. The surface morphologies were observed using field emission scanning electron microscope (FE-SEM).