Browse > Article

The Etching Characteristics of ZnO thin Films using $BCl_3/Ar$ Inductively Coupled Plasma  

Woo, Jong-Chang (중앙대 전기전자공학부)
Kim, Gwan-Ha (중앙대 전기전자공학부)
Kim, Kyoung-Tae (중앙대 전기전자공학부)
Kim, Jong-Gyu (중앙대 전기전자공학부)
Kang, Chan-Min (중앙대 전기전자공학부)
Kim, Chang-Il (중앙대 전기전자공학부)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.56, no.3, 2007 , pp. 566-570 More about this Journal
Abstract
The specific electrical, optical and acoustic properties of Zinc Oxide (ZnO) are important for semiconductor process which has many various applications. Piezoelectric ZnO films has been widely used for such as transducers, bulk and surface acoustic-wave resonators, and acousto-optic devices. In this study, we investigated etch characteristics of ZnO thin films in inductively coupled plasma etch system with $BCl_3/Ar$ gas mixture. The etching characteristics of ZnO thin films were investigated in terms of etch rates and selectivities to $SiO_2$ as a function of $BCl_3/Ar$ gas mixing ratio, RF power, DC bias voltage and process pressure. The maximum ZnO etch rate of 172 nm/min was obtained for $BCl_3$ (80%)/Ar(20%) gas mixture. The chemical states on the etched surface were investigated with X-ray photoelectron spectroscopy (XPS).
Keywords
Etching; ZnO; XPS; $BCl_3/Ar$;
Citations & Related Records

Times Cited By SCOPUS : 0
연도 인용수 순위
  • Reference
1 K. K. Kim, J. H. Song, H. J. Jung, W. K Choi, S. J. Park, J. H. Song, 'The grain size effects on the photoluminescence of ZnO/-Al2O3 grown by radio-frequency magnetron sputtering', J. Appl. Phys. vol. 87, p 3573, 2000
2 D. P. Kim, J. W. Yeo and Chang-II Kim, 'The etching properties of SBT thin films in BC13/C12/Ar plasma', Thin Solid Films, Vol 459, Issue 1-2, p 76, 2004   DOI   ScienceOn
3 K. C. Lee, C. Lee, 'Characteristics of ZnO Thin Films Grown on p-type Si and Sapphire Substrate by Pulsed Laser Deposition', KIEE International Transactions on EA, Vol 3, Num 6, p 241, 2003
4 이상렬, '차세대 ZnO 발광소자 연구동향', 최신전기학회지, Vol 51, Num. 3, p 42, 2002
5 R.M. Todi, K.B. Sundaram, A.P. Warren, K. Scammon, 'Investigation of oxygen annealing effects on RF sputter deposited SiC thin films', Solid-State Electronics, Vol 50, Issues 7-8, p 1189, 2006   DOI   ScienceOn
6 R. Groenen, M. Creatore, M. C. M. van de Sanden, 'Dry etching of surface textured zinc oxide using a remote argon-hydrogen plasma', Appl, Surf. Sci, Vol 241. Issue 3-4, p 321, 2005   DOI
7 S. M. Gu, D. P. Kim, K. T. Kim, C. I. Kim,'The etching properties of MgO thin films in Cl2/Ar gas chemistry', Thin Solid Films, Vol 475, Issue 1-2, p 313, 2005   DOI   ScienceOn
8 D. C. Reynold, D. C. Look, B. Jogai, and H. Morko, 'Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaN', Solid State Commun, Vol. 101, Issue 9, p 643, 1997
9 B. J. Lee, H. S. Chung, K. S. Lee, 'Etching of Zinc Oxide(ZnO) Using Isomer of Butyl Acetate', 대한전기학회, Vol 51, Num. 3, p 111, 2002
10 명재민, 박민철, 황득구, 'ZnO 광소자 연구 동향', 전기전자재료학회지, 제14권, 제8호, p 11, 2001
11 D. C. Reynolds, D. C. Look, B. Jogai, J. V. Nostrand, R. Ones, and J. Jenny, 'Source of the yellow luminescence band in GaN grown by gas-source molecular beam epitaxy and the green luminescence band in single crystal ZnO', Solid State Commun, Vol. 106, Issue 10, p 701, 1998
12 S. Bethke, H. Pan, and B. W. Wessels, 'Luminescence of heteroepitaxial zinc oxide', Appl, Phys. Lett, Vol. 52, Issue 2, p 138, 1998   DOI