• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.67-67
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• 2011

Compound semiconductor/CNTs composites have shown considerably improved efficiency improvement in photovoltaic devices, which is often attributed to two different factors. One is the formation of efficient electronic energy cascade structures. The other effect of CNTs on the performance of photovoltaic devices is the decrement of interfacial resistance. The interfacial resistances at n-type/ p-type materials and/or n-type materials/TCO electrode are reduced by an outstanding electrical property of CNTs. In addition to the effects of CNTs, we report the third reason for increment of efficiency in photovoltaic devices by CNT's well-known electrical field enhancement effects. The improved ${\beta}$ values in reverse-FE currents of CIGS electrode with SWNTs layers indicate the enhancement of electrical field in photovoltaic devices, which implies the acceleration of the electron transfer rate in the cell. Due to the formation of an efficient electronic energy cascade structure and the decrease of the interfacial resistance as well as the improvement of the electrical field in the photovoltaic devices, the power conversion efficiency of electrochemically deposited superstrate-type CIGS solar cells was increased 24.3% in the presence of SWNTs and showed 10.40% conversion efficiency.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.17-23
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• 2018

Recently, electric semiconductors became an issue because of efficient use of energy and compaction of electronics. Silicon electric semiconductors are difficult to put into it because of its physical limitations. Hence, the study of WBG (Wideband Gap) semiconductors like SiC and GaN began. These devices received attention because it can be miniaturized and worked at high temperatures over $300^{\circ}C$. WBG MOSFET electric semiconductors can show performance like silicon IGBT. This can solve the current problem of IGBT tail. The current study shows the technical principles and issues related to SiC and GaN power semiconductors. WBG devices can achieve high performance compared to silicon, but its performance can't be fully utilized because of lack in bonding technology. Therefore, this review introduces research on WBG devices and their packaging issues.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.4
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• pp.329-335
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• 2011

In this paper, a dual-band integer-N frequency divider is proposed for 2.4/5.2 GHz multi-standard wireless local area networks. It consists of a multi-modulus imbalance phase switching prescaler and two all-stage programmable counters. It is able to provide dual-band operation with high resolution while maintaining a low power consumption. This frequency divider is integrated with a 5 GHz VCO for multi-standard applications. Measurement results show that the VCO with frequency divider can work at 5.2 GHz with a total power consumption of 22 mW.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.301-303
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• 2001

In this paper we present a Capacitor Charging Power Supply (CCPS) using a series-resonant three-level inverter topology to improve voltage regulation and use semiconductor switches having low blocking voltage capability such as MOSFETs. This inverter can be operated with two modes, Full Power Mode (FPM) and Half Power Mode (HPM). In FPM inverter supplies the high frequency step up transformer with full DC-link voltage and in HPM with half DC-link voltage. HPM switching method will be adopted when CCPS output voltage reaches the preset target value and operates in refresh mode-charge is maintained on the capacitor. In this topology each semiconductor devices blocks a half of the DC-link voltage[2]. A 15kW, 30kV CCPS has been built and will be tested for an electric precipitator application. The CCPS operates from an input voltage of 500VDC and has a variable output voltage between 10 to 30kV and 1kHz repetition rate at 44nF capacitive load [3]. A resonant frequency of 67.9kHz was selected and a voltage regulation of $0.83\%$ has been achieved through the use of half power mode without using the forced cut off the switch current [1]. The theory of operation, circuit topology and test results are given.

• Journal of Power System Engineering
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• v.4 no.1
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• pp.45-50
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• 2000

Circuit breakers have traditionally employed mechanical methods to interrupt excessive currents. According to power semiconductor technology advances in power electronic device, some mechanical breakers are replaced with solid state equivalents. Advantages of the contactors using semiconductor devices include faster fault interrupting, fault current limiting, no arc to contain or extinguish and intelligent power control, and high reliability. This paper describes the design of a static $100{\pm}10%V$ and 0 to 50A DC self-protected contactor with 85A "magnetic tripping" and 100A interruption current at $2.2A/{\mu}s$ short circuit of load condition using a new power device the HARRIS MCT (600V-75A). The self-protection circuit of this system is designed by the classical ZnO varistor for energy absorption and turn-off snubber circuit ("C" or "RCD") of the MCT.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.9-11
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• 2000

To increase the device linearities and the breakdown-voltages of FETs, Al$\sub$0.25/ Ga$\sub$0.75/AS / In$\sub$0.25/Ga$\sub$0.75/As / Partially doped channel FET(DCFET) structures are proposed. The metal- insulator -semiconductor (MIS) like structures show the high gate-drain breakdown voltage(-20 V) and high linearities. The devices showed the small ripple of the current cut-off frequency and the power cut-off frequency over the wide bias range.

• Journal of Electrical Engineering and information Science
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• v.1 no.2
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• pp.109-118
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• 1996

This paper deals with a new multi-level high voltage source inverter with GTO Thyristors. Recently, a multi-level approach seems to be the best suited for implementing high voltage conversion systems because it leads to harmonic reduction and deals with safe high power conversion systems independent of the dynamic switching characteristics of each power semiconductor device. A conventional multi-level inverter has some problems; voltage unbalance between DC-link capacitors and larger blocking voltage across the inner switching devices. To solve these problems, the novel multi-level inverter structure is proposed.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.57-61
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• 2007

We designed and fabricated square coils of 4 layered structure on a PCB board. The size of the coils were $1{\times}1cm^2\;and\;$2{\times}2cm^2$. The line width of the fabricated coils was $100{\mu}m$. By reciprocating a magnet on the surface of a fabricated square coil which is composed of 4 layers, an alternating output voltage was obtained. We changed the vibrational frequency from 0.5 to 7 Hz. The generated voltages were 62 mV at $1{\times}1cm^2$ and 245 mV at $2{\times}2cm^2$ when 5.5 Hz frequency. We rectified and stepped up the output voltage using a quadrupler circuit and $2{\times}2cm^2$ coil. Before using the step up circuit, the measured voltage was 320 mV at 7 Hz. After using the step up circuit, the measured voltage was 400 mV at 7 Hz.

• Journal of the Semiconductor & Display Technology
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• v.23 no.1
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• pp.1-6
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• 2024

Recently, artificial neural networks have been playing a crucial role and advancing across various fields. Artificial neural networks are typically categorized into feedforward neural networks and recurrent neural networks. However, feedforward neural networks are primarily used for processing static spatial patterns such as image recognition and object detection. They are not suitable for handling temporal signals. Recurrent neural networks, on the other hand, face the challenges of complex training procedures and requiring significant computational power. In this paper, we propose memristors suitable for an advanced form of recurrent neural networks called reservoir computing systems, utilizing a mask processor. Using the characteristic equations of Ti/TiOx/TaOy/Pt, Pt/TiOx/Pt, and Ag/ZnO-NW/Pt memristors, we generated current-voltage curves to verify their memristive behavior through the confirmation of hysteresis. Subsequently, we trained and inferred reservoir computing systems using these memristors with the NIST TI-46 database. Among these systems, the accuracy of the reservoir computing system based on Ti/TiOx/TaOy/Pt memristors reached 99%, confirming the Ti/TiOx/TaOy/Pt memristor structure's suitability for inferring speech recognition tasks.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.28.2-28.2
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• 2011

Resistance random access memory (ReRAM) is a promising candidate for next-generation nonvolatile memory because of its advantageous qualities such as simple structure, superior scalability, fast switching speed, low-power operation, and nondestructive readout. We investigated the resistive switching behavior of tantalum oxide that has been widely used in dynamic random access memories (DRAM) in the present semiconductor industry. As a result, it possesses full compatibility with the entrenched complementary metal-oxide-semiconductor processes. According to previous studies, TiN is a good oxygen reservoir. The TiN top electrode possesses the specific properties to control and modulate oxygen ion reproductively, which results in excellent resistive switching characteristics. This study presents fully room temperature fabricated the TiN/$TaO_x$/Pt devices and their electrical properties for nonvolatile memory application. In addition, we investigated the TiN electrode dependence of the electrical properties in $TaO_x$ memory devices. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to $10^5$ cycles. Moreover, the benefits of high devise yield multilevel storage possibility make them promising in the next generation nonvolatile memory applications.