• Proceedings of the KIEE Conference
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• 2002.07b
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• pp.1370-1372
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• 2002

현재 가정 및 사무실 사용전력 가운데 실제 이용되지 않고 전자기기의 대기상태에서 버려지는 대기소모전력이 5${\sim}$10%에 이르는 것으로 보고되고 있다. 이를 줄이기 위한 노력이 선진국들뿐만 아니라 국제적 차원에서 경주되고 있다. 우리나라도 가전기기 및 산업기기의 자동화 및 on-line화에 따른 대기소모전력이 점차 증가하고 있어, 전기에너지 낭비의 큰 요인이 되고 있을 뿐만 아니라, 온실가스 배출량을 감축하려는 국제협약에도 배치된다. 따라서 대기전력을 줄이기 위한 범국가적인 제도적 기술적 노력을 필요로 한다. 본 논문에서는 대기전력절감기술 및 최근 국제동향에 대해서 기술하였다.

• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.27-32
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• 2013

In this paper, the boost converter was implemented by digital control in many applications of the step-up. The PWM(pulse width modulation) control module of boost converter was digitized at power converter using the FPGA device and VHDL. The boost converter was designed to output a fixed voltage through the PI control algorithm of the PWM control module even if input voltage and output load are variable. The boost converter was digitized can be simplified by reducing the size of the module and the external control components. Thus, the digital power IC has advantageous for weight reduction and miniaturization of electronic products because it can be controlled remotely by setting the desired output voltage and PWM control module. The boost converter using the digital power IC was confirmed through experiments and the good performances were showed from experiment results.

• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.335-339
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• 2003

This Paper describes the design and the simulation results of the RF CMOS Class-E Power Amplifier for a 2.4GHz ISM band. This circuit is composed two connected amplifiers. where Class F amplifier drives Class E amplifier. The proposed circuit can reduce the total power dissipation of the driving stage and can work with higher efficiency. The power amplifier has been implemented in a standard 0.25$\mu\textrm{m}$ CMOS technology and is shown to deliver 100mW output Power to load with 41％ power added efficiency(PAE) from a 2.5V supply.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1785-1787
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• 2003

본 논문에서는 현재 대용량 전력변환 소자인 사이리스터는 해남-제주간의 HVDC변환소에 채용되어 운전중에 있고, BTB 및 SVC등에 채용되고 있으며, 향후 FACTS, 남북 전력계통연계, 동북아 계통연계 등 전력변환용으로 사용될 부품으로 사용범위가 날로 증가하고 있는 2,208개의 사이리스터의 수명 및 신뢰성을 평가하기 위해 고온직류 blocking 가속열화시험조건에 대해서 기술하였다.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1018-1019
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• 2015

Recently, standby power reduction techniques of AC/DC adaptor were developed, consuming power almost arrived to 300mW level. The standby power losses are composed of the input filter loss 11.8mW, the control IC for AC/DC adaptor 18mW, the switching loss 9.53mW and the feedback loss 123mW. And there are the standby power reduction techniques. In this paper, in order to reduce the standby power of SMPS more, the loss due to a voltage difference between input and output is reduced by the control circuit which is composed of the low voltage driving circuit and voltage regulator. The low voltage driving circuit operates on the low voltage of input and off the high voltage. The low voltage driving IC was produced by the $1.0{\mu}m$, high voltage DMOS process.

• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.536-538
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• 2018

This paper introduces an enhanced interleaved (IL) PFC (Power Factor Correction) boost converter typed 650V Intelligent Power Module (IPM), which is fully optimized hybrid IGBT converter modules; Silicon (Si) IGBT and Silicon Carbide (SiC) diode, for up to 10kW HVAC (Heating, Ventilation, and Air Conditioning) systems. It utilizes newly developed $4^{th}$ Generation Field Stop (FS) trench IGBTs, $EXTREMEFAST^{TM}$ anti-paralleled diodes, SiC Junction Barrier Schottky (JBS) diodes, Bridge rectifiers, Multi-function LVIC, and Built-in thermistor provide good reliable characteristics for the entire system. This module also takes technical advantage of DBC (Direct Bonded Copper) substrate for the better thermal performance. It is shown that the Si IGBT/SiC diode hybrid IL PFC module can achieve excellent EMI performance and greatly enhance the power handling capability or switching frequency of various applications compared to the Si IGBT/Diode. This paper provides an overall description of the newly developed 650V/50A Hybrid SiC IL PFC IPM product.

• Proceedings of the KIPE Conference
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• 2002.07a
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• pp.158-162
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• 2002

This paper presents a novel 3-phase IGBT module called the SPM (Smart Power Module). This is a new design developed to provide a very compact, low cost, high performance and reliable motor drive system. Several distinct design concepts were used to achieve the highly integrated functionality in a new cost-effective small package. An overall description to the SPM is given and actual application issues such as electrical characteristics, circuit configurations, thermal performance and power ratings are discussed

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.3-6
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• 2004

Power semiconductor devices are being compact, high performance and intelligent thanks to recent remarkable developments of silicon design, process and related packaging technologies. Developments of MOS-gate transistors such as MOSFET and IGBT are dominant thanks to their advantages on high speed operation. In conjunction with package technology, silicon technologies such as trench, charge balance and NPT will support future power semiconductors. In addition, wide band gap material such as SiC and GaN are being studies for next generation power semiconductor devices.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1578-1580
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• 2002

The breakdown and on-state characteristics of the multi-RESURF SOI LDMOSFET is presented. P-/n-epi layer thickness and doping concentration is varied from $2{\mu}m{\sim}5{\mu}m$ and $1{\times}10^{15}/cm^3{\sim}9{\times}10^{15}/cm^3$ to obtain optimum breakdown voltage and on-resistance. The breakdown and on-state characteristics of the device is verified by two-dimensional process simulator ATHENA and device simulator ATLAS.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.367-368
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• 2014

This paper investigates characteristics of high power semiconductor device losses in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor device of press-pack type IGCT of 6.5kV is considered in this paper. Analysis is performed based on neutral point clamped (NPC) 3-level back-to-back type voltage source converter (VSC) supplied from grid voltage of 4160V. This paper describes total loss distribution at worst case under inverter and rectifier operating mode for the power semiconductor switches. The loss analysis is confirmed through PLECS simulations. In addition, the loss factors due to di/dt snubber and ac input filter are presented. The investigation result shows that IGCT type semiconductor devices generate the total efficiency of 97.74% under the rated condition.