• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1606-1608
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• 2002

The triac is a bidirectional triode with blocking and conducting characteristics used in motor control or heater power control. This greatly simplifies the circuits required for the control of the full wave AC Power by reducing the number of power handling components and by reducing the size and complexity of the gate control circuit.[3] In this paper, We can understand measurement results of analysis which have been made on the electrical characteristics of triac with gate diffusion time for the gate area.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2018년도 전력전자학술대회
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• pp.210-212
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• 2018

A new switching mode has been proposed to obtain high power factor and low THD in single stage AC-DC converter. The conventional voltage mode control in critical conduction mode distorts input current shape with poor THD in flyback topology. Once TRIAC dimmer is connected, visible flicker in the LED lamp is easily detected due to a lack of TRAIC holding current near the input voltage zero cross. The newly proposed method can shape the input current by providing a desired reference voltage so that low THD is obtained by ideal sinusoidal input current in case of no dimmer connection and flat input current performs good TRIAC dimmer compatibility in phase-cut dimming condition. To confirm the validity of the proposed method, theoretical analysis and experimental result from 8W dimmable LED lighting system are presented.

• 한국방사선학회논문지
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• 제6권6호
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• pp.495-498
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• 2012

논문에서는 전력용반도체 소자의 수명예측으로 기초적인 동작환경과 구동시간들을 기록하였다. 전력변환기의 제어기에 의하여 전력소자의 구동시간과 방렬기의 온도 등 동작환경을 누적하여 기록하고 이를 확인할 수 있도록 하므로써 전력용 반도체소자는 그 구조에서 수명은 반도체 칩의 온도변화의 크기와 반복회수로 사용기간을 보증하고 있으므로 이에 의한 수명의 예측으로 유지보수 또는 교체가 적절한 시점에서 이루어질 수 있다고 판단된다.

• 대한금속재료학회지
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• 제49권9호
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• pp.708-714
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• 2011

The premature failure of a servovalve used for six months in a thermal power plant has been analyzed. The servovalve was made of stainless steel, containing 16Cr-0.44Mo, along with other elements. An overload of oil-supply pumping and an abnormal increase in the oil flux were observed during operation. A study revealed that erosion and corrosion could be the main causes of the failure. The visual examination of the servovalve did not show any appreciable damage. However, corrosion and erosion of the servovalve were observed using scanning electron microscopy (SEM). Upon examination of the servovalve, the corrosion was found to have occurred throughout the bushing and spool; however, erosion occurred at only the edge-side. In addition, the condition of the electrohydraulic control system (EHC) oil was investigated with respect to its satisfaction of the management standard.

• 반도체디스플레이기술학회지
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• 제6권2호
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• pp.45-48
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• 2007

The proposed method offers an improved DC/DC converter scheme to increase power density. It is based on half-bridge topology with newly introduced pulse-grouping control method, which helps to reduce the transformer size and the volume of semiconductor devices maintaining high efficiency. Test results with 85W(18.5V/4.6A) design shows that the measured efficiency is 93.5% with power density of $36W/in^3$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.6-7
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• 2008

Current sensing in power semiconductors involves sensing of over-current in order to protect the device from harsh conditions. This technique is one of the most important functions in stabilizing power semiconductor device modules. The sense FET is very efficient method with low power consumption, fast sensing speed and accuracy. In this paper we have analyzed the characteristics of proposed sense FET and optimized its electrical characteristics to apply conventional 450V power MOSFET devices by numerical and simulation analysis. The proposed sense FET has the n-drift doping concentration $1.5\times10^{14}cm^{-3}$, size of $600{\mu}m^2$ with 4.5 $\Omega$, and off-state leakage current below 50 ${\mu}A$. We offer the layout of the proposed sense FET to process actually. The offerd design and optimization methods is meaningful, which the methods can be applied to the power devices having various breakdown voltages for protection.

• 한국정보통신학회논문지
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• 제21권2호
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• pp.353-360
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• 2017

최근 Si기반 전력반도체의 물성적 한계로 인해 스위칭 반도체의 발전 속도가 떨어지고, 더 이상의 성능향상을 기대하기 어려운 실정이지만 Si기반보다 우수한 물성을 가진 SiC 기반 전력반도체가 개발되고 있다. 하지만 실제 시스템에 적용하기 위해서는 아직 뚜렷한 방법이 제시되지 못하고 있다. SiC기반 전력반도체의 시스템 설계에 대한 타당성과 솔루션을 제안하기 위하여, 1kW급의 DC-DC컨버터를 설계 및 제작하고 스위칭 주파수, 듀티비, 전압, 전류의 변화 조건 속에서 Si기반 전력반도체와 실험을 통해 비교 분석하였다. 각 시스템 부하별 입․출력을 통한 효율을 분석 및 Si MOSFET 대비 SiC MOSFET의 우수한 스위칭 성능을 확인하였고, 이를 통해 동일한 구동 조건에서 SiC MOSFET의 우수성을 검증하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(5)
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• pp.195-198
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• 2000

A CMOS power amplifier for wireless home networks is designed using 0.2sum 1-poly 5-metal standard CMOS technology and simulation results are presented. The power amplifier provides maximum output power of 16.5dBm to a 50-Ohm load at 2.450Hz and dissipates 220mW of dc power from a single 2.5-V supply. The designed CMOS power amplifier has power control range of 20dB and an overall power-added efficiency of 17%

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권4호
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• pp.388-396
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• 2012

In this paper, a $320{\times}240$ pixel, 80 frame/s CMOS image sensor with a low power dual correlated double sampling (CDS) scheme is presented. A novel 8-bit hold-and-go counter in each column is proposed to obtain 10-bit resolution. Furthermore, dual CDS and a configurable counter scheme are also discussed to realize efficient power reduction. With these techniques, the digital counter consumes at least 43% and at most 61% less power compared with the column-counters type, and the frame rate is approximately 40% faster than the double memory type due to a partial pipeline structure without additional memories. The prototype sensor was fabricated in a Samsung $0.13{\mu}m$ 1P4M CMOS process and used a 4T APS with a pixel pitch of $2.25{\mu}m$. The measured column fixed pattern noise (FPN) is 0.10 LSB.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 F
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• pp.2659-2661
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• 1999

This paper studies the scope and object of international standards related to power supplies and semiconductor convertors. IEC 60478 and IEC 60686 are international standards for stabilized power supplies with DC and AC output, respectively, and IEC 61204 for low-voltage power supply devices with DC output. IEC 60146 : Semiconductor Convertors is a representative international standard in the field of semiconductor convertors. In this field, there are some international standards such as IEC 60971. IEC 61136-1. IEC 61800. and etc.. In this paper, IEC 60686, 60971, 61136-1, and 61240 are mainly studied.