• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.149-156
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• 2019

A stretchable thermoelectric module consisting of 5 pairs of Bi₂Te₃-based hot-pressed p-n thermoelectric legs was processed by filling the module inside with polydimethylsiloxane (PDMS) and removing the top and bottom substrates. Its stretchable characteristics and power generation properties were measured. The integrity of the module was kept well even after 10 strain cycles ranging from 0 to 0.1. With increasing the tensile strain to 0.2, the module circuitry became open because of joint failure between Cu electrodes and thermoelectric legs. The stretchable thermoelectric module exhibited an open circuit voltage of 4.6 mV with a temperature difference of 2.2K across both ends of thermoelectric legs, and changes in its open circuit voltage were below 5% for tensile strains of 0~0.1. Being elongated for a strain of 0.1, it exhibited the maximum output power of 18.5 ㎼ with the temperature difference of 2.2K across its both ends.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.13-18
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• 2000

Low temperature co-fired ceramics on metal (LTCC-M) is efficient for embedding passive components with good tolerance in a module due to the dimensional stability in x and y directions by the constraint of metal core during the firing. In addition, the radiation noise can be reduced by metal core. In this paper, embedded passive components were introduced and a power amplifier module (PAM) fabricated by using the passive components was explained. The embedded passive components in test patters showed the tolerance of 10~20% and the good repeatability in tolerance of embedded passives was maintained in module fabrication. The shortened traces in multi chip modules (MCMs) make the signal delay time decreased and the embedded passives simplify the packaging processes owing to the less solder points, which enhance the electrical performance and increase the reliability of the modules. The LTCC-M technology is one of the promising candidates for RF application and is expected to expand its applications to power and high performance devices.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.1-13
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• 2014

The paper gives an overview of the concepts, basic requirements, and trends regarding packaging technologies of power modules in hybrid (HEV) and electric vehicles (EV). Power electronics is gaining more and more importance in the automotive sector due to the slow but steady progress of introducing partially or even fully electric powered vehicles. The demands for power electronic devices and systems are manifold, and concerns besides aspects such as energy efficiency, cooling and costs especially robustness and lifetime issues. Higher operation temperatures and the current density increase of new IGBT (Insulated Gate Bipolar Transistor) generations make it more and more complicated to meet the quality requirements for power electronic modules. Especially the increasing heat dissipation inside the silicon (Si) leads to maximum operation temperatures of nearly $200^{\circ}C$. As a result new packaging technologies are needed to face the demands of power modules in the future. Wide-band gap (WBG) semiconductors such as silicon carbide (SiC) or gallium nitride (GaN) have the potential to considerably enhance the energy efficiency and to reduce the weight of power electronic systems in EVs due to their improved electrical and thermal properties in comparison to Si based solutions. In this paper, we will introduce various package materials, advanced packaging technologies, heat dissipation and thermal management of advanced power modules with extended reliability for EV applications. In addition, SiC and GaN based WBG power modules will be introduced.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.71-76
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• 2004

The power consumption of TEC for Laser diode cooling was predicted by 3-D FEM simulation and verified by experiment. The operating conditions such as power consumption of Laser diode, set temperature, ambient temperature, resistance of thermal path was considered to estimate the TEC power consumption. Using 3-D FEM simulation, the relation between TEC configuration defined by the pellet dimension and the number and power consumption was investigated for low power consumption scheme. As a result, as the thermal resistance of the pellet increased, the power consumption decreased.

• Journal of the Korean Society of Industry Convergence
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• v.24 no.6_2
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• pp.919-926
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• 2021

In this paper, a study was conducted on the miniaturization of an e-Mobility battery charger module using GaN-FET. GaN-FET is one of the types of WBG devices, and it is a device that exceeds the performance of existing Si power semiconductors. In particular, GaN-FET has the advantage of small packaging size and high switching frequency operation, which is advantageous for miniaturization of power converters. Therefore, a bidirectional DC/DC converter module for e-mobility charging using GaN-FET was developed. To apply to the converter to be developed, analysis is performed on the characteristics of GaN-FET, and after manufacturing a prototype of a bidirectional DC/DC converter module, the efficiency and temperature data of the power converter are analyzed to verify its feasibility.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1108-1109
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• 2008

To survive in outdoor environments, photovoltaic modules rely on packaging materials to provide requisite durability. We analyzed the properties of encapsulant materials that are important for photovoltaic module packaging. Recently, the thickness of solar cell gets thinner to reduce the quantity of silicon. And the reduced thickness make it easy to be broken while PV module fabrication process. Solar cell's micro cracks are increasing the breakage risk over the whole value chain from the wafer to the finished module, because the wafer or cell is exposed to tensile stress during handling and processing. This phenomenon might make PV module's maximum power and durability down. So, when using thin solar cell for PV module fabrication, it is needed to optimize the material and fabrication condition which is quite different from normal thick solar cell process. Normally, gel-content of EVA sheet should be higher than 80% so PV module has long term durability. But high gel-content characteristic might cause micro-crack on solar cell. In this experiment, we fabricated several specimen by varying curing temperature and time condition. And from the gel-content measurement, we figure the best fabrication condition. Also we examine the crack generation phenomenon during experiment.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.21-30
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• 2018

Driven by the recent energy saving trend, conventional silicon based power conversion modules are being replaced by modules using silicon carbide. Previous papers have focused mainly on the electrical advantages of silicon carbide semiconductors that can be used to design switching devices with much lower losses than conventional silicon based devices. However, no systematic study of their thermomechanical reliability in power conversion modules using finite element method (FEM) simulation has been presented. In this paper, silicon and silicon carbide based power devices with three-phase switching were designed and compared from the viewpoint of thermomechanical reliability. The switching loss of power conversion module was measured by the switching loss evaluation system and measured switching loss data was used for the thermal FEM simulation. Temperature and stress/strain distributions were analyzed. Finally, a thermal fatigue simulation was conducted to analyze the creep phenomenon of the joining materials. It was shown that at the working frequency of 20 kHz, the maximum temperature and stress of the power conversion module with SiC chips were reduced by 56% and 47%, respectively, compared with Si chips. In addition, the creep equivalent strain of joining material in SiC chip was reduced by 53% after thermal cycle, compared with the joining material in Si chip.

• Korean Journal of Optics and Photonics
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• v.11 no.3
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• pp.179-186
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• 2000

Optical coupling coefficients and misalignment tolerance of 155 Mbps optical transmitter module of passive alignment technology, to be usable in ATM system, B-NT (Broadband Network Termination) system, and 10 G transmission system for information super-highway networks, were calculated, compaired with it's engineer samples, and discussed. These engineer samples of -4.5 dBm maximum output power were packaged in the method of butt coupling of flat-fiber and tested reliability evaluation. Hence the cheap packaging method of optical transmitter module was researched. rched.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.04a
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• pp.9-25
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• 2001

Fairchild has been developing a new class IPM called SPM consisting of dramatic Packaging technology to achieve the lowest cost rind better performance for low power home appliances and industrial AC drive applications. The first Fairchild SPM development with IGBT 600V/15A for washing machine application started in 1999 and was completed successfully. Fairchild SPMs are going to be the best solution for low power inverter-driven AC drive system after 2001. The new SPM Packages like SPM ∥ and SPIM for the next generation IPM with the highest competitiveness (cost & performance) shall be continuouslly developed.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.1
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• pp.39-43
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• 2009

In order to develop piezoelectric inverter module for CCFL driving, Rosen-type multilayer piezoelectric transformer was fabricated. The output power and efficiency of mutilayer piezoelectric transformer according to the variation inner electrode layer were investigated. Mutilayer piezoelectric transformer was fabricated conventional mutilayer ceramic method using PZT base ceramics. Also, piezoelectric inverter module was adopted driving circuit with half-bridge type. The piezoelectric inverter module was set up with input voltage 12.5 V, switching frequency 104.3 KHz. The results showed the value of step-up ratio 100, efficiency 87% at load resistance of $100k{\Omega}$.