Improvement in Thermomechanical Reliability of Power Conversion Modules Using SiC Power Semiconductors: A Comparison of SiC and Si via FEM Simulation |
Kim, Cheolgyu
(Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST))
Oh, Chulmin (Electronic Convergence Material & Device Research Center, Korea Electronic Technology Institute) Choi, Yunhwa (JMJ Korea Co., Ltd.) Jang, Kyung-Oun (Power conversion, Fairchild Semiconductor Ltd.) Kim, Taek-Soo (Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST)) |
1 | T. Matsukawa, and R. Shimada, "Efficiency improvement of AC/DC converter using SiC-based power electronics device", Proc. 20th IEEE/NPSS Symposium on Fusion Engineering, IEEE, 379 (2003). |
2 | L. Coppola, D. Huff, F. Wang, R. Burgos, and D. Boroyevich, "Survey on high-temperature packaging materials for SiC-based power electronics modules", Proc. 38th IEEE Power s Conf., 2234 (2007). |
3 | E. Cilio, J. Homberger, B. McPherson, R. Schupbach, A. Lostetter, and J. Garrett, "A novel high density 100kW three-phase silicon carbide (SIC) multichip power module (MCPM) inverter", in Proc. Appl. Power Electron. Conf. 666 (2007). |
4 | C. N.-M. Ho, H. Breuninger, S. Pettersson, G. Escobar, and F. Canales, "A comparative performance study of an inter-leaved boost converter using commercial Si and SiC diodes for PV applications", IEEE Trans. Power Electron., 28(1), 289 (2013). DOI |
5 | D. T. Morisette, J. A. Cooper, M. R. Melloch, G. M. Dolny, P. M. Shenoy, M. Zafrani, and J. Gladish, "Static and dynamic characterization of large-area high-current-density SiC Schottky diodes", IEEE Trans. Elec. Devices, 48(2), 349 (2001). |
6 | D. T. Morisette, and J. A. Cooper, "Theoretical comparison of SiC PiN and Schottky diodes based on power dissipation considerations", IEEE Trans. Elec. Devices, 49(9), 1657 (2002). |
7 | A. Sharma, S. J. Lee, Y. J. Jang, and J. P. Jung, "SiC based Technology for High Power Electronics and Packaging Applications", J. Microelectron. Packag. Soc., 21(2), 71 (2014). DOI |
8 | B. Ozpineci, and L. M. Tolbert, "Characterization of SiC Schottky diodes at different temperatures", IEEE Power Elec. Lett., 99(2), 54 (2003). |
9 | K. Shenai, R. S. Scott, and B. J. Baliga, "Optimum semiconductors for high-power electronics", IEEE Trans. Elec. Devices, 36(9), 1811 (1989). |
10 | M. Bhatnagar, P. K. McLarty, and B. Baliga, "Silicon-carbide high-voltage (400 V) Schottky barrier diodes", IEEE Elec. Device Lett., 13(10), 501 (1992). DOI |
11 | M. Bhatnagar, and B. J. Baliga, "Comparison of 6H-SiC, 3C-SiC, and Si for power devices", IEEE Trans. Elec. Devices, 40(3) 645 (1993). |
12 | W. Wright, J. Carter, P. Alexandrov, M. Pan, M. Weiner, and J. Zhao, "Comparison of Si and SiC diodes during operation in three-phase inverter driving ac induction motor", Electron. Lett., 37(12) 787 (2001). DOI |
13 | J. W. Yoon, J. H. Bang, Y. H. Ko, S. H. Yoo, J. K. Kim, and C. W. Lee, "Power module packaging technology with extended reliability for electric vehicle applications", J. Microelectron. Packag. Soc., 21(4), 1 (2014). DOI |
14 | K. S. Kim, D. H. Choi, and S. B. Jung, "Overview on thermal management technology for high power device packaging", J. Microelectron. Packag. Soc., 21(2), 13 (2014). DOI |
15 | S. Mounce, B. McPherson, R. Schupbach, and A. Lostetter, "Ultralightweight, High Efficiency SiC Based Power Electronic Converters for Extreme Environments", Proc. IEEE Aero. Conf., 1 (2006). |
16 | Z. Wang, X. Shi, L. M. Tolbert, F. F. Wang, Z. Liang, D. Costinett, and B. J. Blalock, "A high temperature silicon carbide MOSFET power module with integrated silicon-on-insulatorbased gate drive", IEEE Trans. Power Electron., 30(3), 1432 (2015). DOI |
17 | V. d'Alessandro, A. Magnani, M. Riccio, G. Breglio, A. Irace, N. Rinaldi, and A. Castellazzi, "SPICE modeling and dynamic electrothermal simulation of SiC power MOSFETs", Proc. 26th Int. Sym. Power Semicond., 285 (2014). |
18 | U. Drofenik, and J. W. Kolar, "A general scheme for calculating switching-and conduction-losses of power semiconductors in numerical circuit simulations of power electronic systems", Proc. Int. Power Electron. Conf., 4 (2005). |
19 | R. W. De Doncker, D. M. Divan, and M. H. Kheraluwala, "A three-phase soft-switched high-power-density DC/DC converter for high-power applications", IEEE trans. Ind. Appl., 27(1), 63 (1991). |
20 | L. A. Moran, J. W. Dixon, and R. R. Wallace, "A three-phase active power filter operating with fixed switching frequency for reactive power and current harmonic compensation", IEEE Trans. Ind. Electron., 42(4), 402 (1995). DOI |
21 | C. Kanchanomai, Y. Miyashita, and Y. Mutoh, "Low-cycle fatigue behavior of Sn-Ag, Sn-Ag-Cu, and Sn-Ag-Cu-Bi leadfree solders", J. Electron. Mater., 31(5), 456 (2002). DOI |
22 | V. Caccuri, X. Milhet, P. Gadaud, D. Bertheau, and M. Gerland, "Mechanical Properties of Sintered Ag as a New Material for Die Bonding: Influence of the Density", J. Electron. Mater., 43(12), 4510 (2014). DOI |
23 | I. W. Suh, H. S. Jung, Y. H. Lee, Y. H. Kim, and S. H. Choa, "Heat dissipation technology of IGBT module package", J. Microelectron. Packag. Soc., 21(3), 7 (2014). DOI |
24 | P. T. Vianco, "Fatigue and creep of lead-free solder alloys: Fundamental properties", ASM International, 67 (2005). |
25 | G. Chen, X.-H. Sun, P. Nie, Y.-H. Mei, G.-Q. Lu, and X. Chen, "High-temperature creep behavior of low-temperature-sintered nano-silver paste films", J. Electron. Mater., 41(4), 782 (2012). DOI |
![]() |