• 제목/요약/키워드: Power Oscillator

검색결과 571건 처리시간 0.021초

A Study of Phase Noise Due to Power Supply Noise in a CMOS Ring Oscillator

  • Park Se-Hoon
    • Journal of information and communication convergence engineering
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    • 제3권4호
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    • pp.184-186
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    • 2005
  • The effect of power supply noise on the phase noise of a ring oscillator is studied. The power supply noise source in series with DC power supply voltage is applied to a 3 stage CMOS ring oscillator. The phase noise due to the power supply noise is modeled by the narrow band phase modulation. The model is verified by the fact that the spectrum of output of ring oscillator has two side bands at the frequencies offset from the frequency of the ring oscillator by the frequency of the power supply noise source. Simulations at several different frequency of the power supply noise reveals that the ring oscillator acts as a low pass filter to the power supply noise. This study, as a result, shows that the phase noise generated by the power supply noise is inversely proportional to the frequency offset from the carrier frequency.

A Class E Power Oscillator for 6.78-MHz Wireless Power Transfer System

  • Yang, Jong-Ryul
    • Journal of Electrical Engineering and Technology
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    • 제13권1호
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    • pp.220-225
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    • 2018
  • A class E power oscillator is demonstrated for 6.78-MHz wireless power transfer system. The oscillator is designed with a class E power amplifier to use an LC feedback network with a high-Q inductor between the input and the output. Multiple capacitors are used to minimize the variation of the oscillation frequency by capacitance tolerance. The gate and drain bias voltages with opposite characteristics to make the frequency shift of the oscillator are connected in a resistance distribution circuit located at the output of the low drop-out regulator and supplied bias voltages for class E operation. The measured output of the class E power oscillator, realized using the co-simulation, shows 9.2 W transmitted power, 6.98 MHz frequency and 86.5% transmission efficiency at the condition with 20 V $V_{DS}$ and 2.4 V $V_{GS}$.

$0.35{\mu}m$ 표준 CMOS 공정에서 제작된 저전력 다중 발진기 (A Low Power Multi Level Oscillator Fabricated in $0.35{\mu}m$ Standard CMOS Process)

  • 채용웅;윤광열
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제55권8호
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    • pp.399-403
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    • 2006
  • An accurate constant output voltage provided by the analog memory cell may be used by the low power oscillator to generate an accurate low frequency output signal. This accurate low frequency output signal may be used to maintain long-term timing accuracy in host devices during sleep modes of operation when an external crystal is not available to provide a clock signal. Further, incorporation of the analog memory cell in the low power oscillator is fully implementable in a 0.35um Samsung standard CMOS process. Therefore, the analog memory cell incorporated into the low power oscillator avoids the previous problems in a oscillator by providing a temperature-stable, low power consumption, size-efficient method for generating an accurate reference clock signal that can be used to support long sleep mode operation.

A Low Close-in Phase Noise 2.4 GHz RF Hybrid Oscillator using a Frequency Multiplier

  • 문현원
    • 한국산업정보학회논문지
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    • 제20권1호
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    • pp.49-55
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    • 2015
  • This paper proposes a 2.4 GHz RF oscillator with a very low close-in phase noise performance. This is composed of a low frequency crystal oscillator and three frequency multipliers such as two doubler (X2) and one tripler (X3). The proposed oscillator is implemented as a hybrid type circuit design using a discrete silicon bipolar transistor. The measurement results of the proposed oscillator structure show -115 dBc/Hz close-in phase noise at 10 kHz offset frequency, while only dissipating 5 mW from a 1-V supply. Its close-in phase noise level is very close to that of a low frequency crystal oscillator with little degradation of noise performance. The proposed structure which is consisted of a low frequency crystal oscillator and a frequency multiplier provides new method to implement a low power low close-in phase noise RF local oscillator.

UWB용 카오스 오실레이터의 설계 및 구현 (Design and Implementation of a Chaotic Oscillator for UWB)

  • 강상기
    • 한국정보통신학회논문지
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    • 제12권12호
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    • pp.2136-2139
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    • 2008
  • 카오스 발진기는 광대역의 신호를 발생시킬 수 있으며, 발진기의 출력 신호는 스위치를 사용해서 on/off 하더라도 스펙트럼 특성이 변하지 않는다. 통신시스템에서 카오스 발진기를 이용하면, 송수신기에서 국부발진기, 믹서 등의 사용이 필요없기 때문에 전력 소모도 적고 시스템이 간단해지는 장점이 있다. 본 논문에는 UWB 시스템용 카오스 발진기의 설계, 구현 및 시험 결과가 기술되어 있다. 본 논문에서 제작된 카오스 발진기의 출력은 3.4GHz의 중심주파수에서 500MHz의 채널대역폭에 -8.11dBm의 출력전력을 가지며, -10dB 대역폭은 약 470MHz 이었다.

센서 네트워크를 위한 2.4 GHz 저잡음 커플드 링 발진기 (A 2.4 GHz Low-Noise Coupled Ring Oscillator with Quadrature Output for Sensor Networks)

  • 심재훈
    • 센서학회지
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    • 제28권2호
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    • pp.121-126
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    • 2019
  • The voltage-controlled oscillator is one of the fundamental building blocks that determine the signal quality and power consumption in RF transceivers for wireless sensor networks. Ring oscillators are attractive owing to their small form factor and multi-phase capability despite the relatively poor phase noise performance in comparison with LC oscillators. The phase noise of a ring oscillator can be improved by using a coupled structure that works at a lower frequency. This paper introduces a 2.4 GHz low-noise ring oscillator that consists of two 3-stage coupled ring oscillators. Each sub-oscillator operates at 800 MHz, and the multi-phase signals are combined to generate a 2.4 GHz quadrature output. The voltage-controlled ring oscillator designed in a 65-nm standard CMOS technology has a tuning range of 800 MHz and exhibits the phase noise of -104 dBc/Hz at 1 MHz offset. The power consumption is 13.3 mW from a 1.2 V supply voltage.

A Study on Configuration of Extremely Low Phase Noise Oscillator Circuit

  • Sakuta, Yukinori;Arai, Yuji;Sekine, Yoshifumi
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -2
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    • pp.1196-1199
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    • 2002
  • The low phase noise frequency source to be used for measurements and so on realizes by oscillator having highly output signal power against output noise power. SAW devices can be used by high power than BAW devices. So we examine on configuration of SAW oscillator circuits with the power gain. In this paper we shall discuss a configuration of oscillator circuit to obtain an extremely low phase noise and an oscillator operating at a non-reactive frequency of SAW resonator.

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200-W Continuous-wave Thulium-doped All-fiber Laser at 2050 nm

  • Shin, Jae Sung;Cha, Yong-Ho;Chun, Byung Jae;Jeong, Do-Young;Park, Hyunmin
    • Current Optics and Photonics
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    • 제5권3호
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    • pp.306-310
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    • 2021
  • A 200-W continuous-wave thulium-doped all-fiber laser at 2050 nm was developed with a master oscillator power amplifier configuration. For the master oscillator, a single-mode thulium-doped fiber laser was built with fiber Bragg gratings. The operating power of the oscillator was 10.1 W at a pump power of 20.9 W, and the slope efficiency was measured to be 53.0%. All emitted wavelengths of the oscillator were located between 2049.2 nm and 2049.9 nm, and no other peaks in different wavelength ranges were observed. The maximum output power of the final amplified beam was 204.6 W at a pump power of 350.4 W. The slope efficiency of the amplifier was measured to be 58.4%.

Theory of Generation Linewidth in Spin-torque Nano-sized Auto-oscillators

  • Kim, Joo-Von;Tiberkevich, Vasil;Slavin, Andrei N.
    • Journal of Magnetics
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    • 제12권2호
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    • pp.53-58
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    • 2007
  • Theory of the generation linewidth of a current-driven spin-torque magnetic nano-oscillator in the presence of thermal fluctuations has been developed and a simple analytical formula for the generation linewidth in the supercritical regime of generation has been derived. It is shown that the strong dependence of the oscillator frequency on the precession power leads to substantial broadening of the generation linewidth of a spin-torque oscillator compared to the case of a linear oscillator, i.e. an oscillator with power-independent generation frequency. The relation between the nonlinearity-induced broadening of the generation linewidth and the nonlinearity-induced increase of the phase-locking band of a spin-torque oscillator to an external microwave signal has been revealed. The derived expression for the generation linewidth predicts a linewidth minimum when the nano-contact is magnetized at a certain angle to its plane, at which the nonlinear frequency shift vanishes. This result is in good agreement with recent experiments.

발진출력 측정을 통한 94 GHz Gunn Diode의 최대 전력 조사 (A Evaluation of the Maximum Power of the 94 GHz Gunn Diode Based on the Measured Oscillation Power)

  • 이동현;염경환;정명숙;전영훈;강연덕;한기웅
    • 한국전자파학회논문지
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    • 제26권5호
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    • pp.471-482
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    • 2015
  • 본 논문에서는 94 GHz Gunn 고정발진기를 설계 및 제작하였고, 이를 이용하여 발진기에 사용된 Gunn 다이오드의 최대 전력을 조사하였다. 94 GHz Gunn 고정발진기는 InP Gunn 다이오드가 사용되었고, WR-10 도파관 구조로 설계 및 제작되었다. 제작된 발진기는 발진주파수 95 GHz에서 12.64 dBm의 출력 전력과 1 MHz 오프셋 주파수에서 -92.7 dBc/Hz의 위상잡음 성능을 보였다. 발진기에 사용된 InP Gunn 다이오드의 최대 전력을 조사하기 위해서 발진기 구조를 턱이 있는 구조로 수정하였다. 그리고 이 턱의 높이를 변화시켜, 발진기가 몇 가지의 다른 부하 임피던스를 갖도록 하였다. 이 몇 가지의 다른 부하 임피던스에 대한 결과로써, 포스트 면에서의 부하 실수부 $G_L$에 대한 발진 신호 $V^2$의 그래프를 얻었다. 이 $G_L-V^2$의 그래프를 이용하여, 바이어스 포스트의 손실이 포함된 Gunn 다이오드의 최대 전력 16.8 dBm을 얻었다. 그리고 short된 Gunn 다이오드와 제로 바이어스 상태의 Gunn 다이오드를 이용하여 바이어스 포스트의 손실을 계산하였다. 바이어스 포스트의 손실을 보상한 InP Gunn 다이오드만의 최대 전력은 95 GHz에서 18.55 dBm이다. 이는 사용된 Gunn 다이오드의 데이터시트에 가까운 결과이다.