• Journal of electromagnetic engineering and science
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• v.16 no.1
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• pp.44-51
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• 2016

A commercial $0.25{\mu}m$ GaN process is used to implement 6-18 GHz wideband power amplifier (PA) monolithic microwave integrated circuits (MMICs). GaN HEMTs are advantageous for enhancing RF power due to high breakdown voltages. However, the large-signal models provided by the foundry service cannot guarantee model accuracy up to frequencies close to their maximum oscillation frequency ($F_{max}$). Generally, the optimum output load point of a PA varies severely according to frequency, which creates difficulties in generating watt-level output power through the octave bandwidth. This study overcomes these issues by the development of in-house large-signal models that include a thermal model and by applying distributed L-C output load matching to reactive matched amplifiers. The proposed GaN PAs have successfully accomplished output power over 5 W through the octave bandwidth.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.221-224
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• 2005

This paper discribes the nonlinear distortion of a pHEMT power amplifier. In the paper, we have used some commercially available power amplifiers for analyzing the relationship between the $IMD_3$ and ACPR for wireless LAN. And the $IMD_3$ results using two-tone test have been compared with ACPR to satisfy the requited 802.11g standard ACPR value. Measurement result shows that $IMD_3$ of 20MHz tone-spacing need to be more than 18.45dBc for power amplifiers. The WCDMA signal is fed into the power amplifier, for analyzing relationship between the asymmetrical $IMD_3$ and ACLR. With measurement result, the asymmetrical $IMD_3$ characteristic has increased with the increase of two-tone spacing. $IMD_3$ measurement result with maximum 20MHz of the two-tone spacing, shows that the difference between $IMD_3(lower)$ and $IMD_3(upper)$ is about 7dB. And the measured ACLR shows 5dB difference at -4MHz and +4MHz offset from center frequency.

• Electronics and Telecommunications Trends
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• v.37 no.5
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• pp.11-21
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• 2022

GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.119-128
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• 1995

We report hybrid and passive mode-locking results of tilted-stripe AlGaAs semiconductor laser traveling wave amplifiers with saturable absorbers. Dependence ofthe pulse width on the mode locking frequency, the bandwidth of spectral filters, and the bias current of the laser amplifier are investigated. We generate 4 ps optical pulses by using the hybrid mode locking technique. The repetition rate and the peak power of generated pulses are 516 MHz and 170 mW, respectively. The tuning range of uor mode locked laser is 10 nm with the center wavelength of 780 nm. We also generate 2.6 ps optical pulses with peak power of 830 mW by using the passive mode locking technique.

• Proceedings of the Optical Society of Korea Conference
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• 2009.10a
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• pp.343-344
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• 2009

Pump wavelength dependence of the gain spectra was investigated by simulating the model of single-pumped fiber optical parametric amplifiers (FOPAs). Conditions for the single-pumped FOPAs having broad bandwidths with relatively large gains were optimized and the gain bandwidth was found to be as large as 146.4 nm when signal power and pump power were 316 nW and 7 W, respectively.

• Journal of Sensor Science and Technology
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• v.33 no.1
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• pp.12-17
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• 2024

Floating inverter amplifiers (FIAs) have recently garnered considerable attention owing to their high energy efficiency and inherent resilience to input common-mode voltages and process-voltage-temperature variations. Since the voltage gain of a simple FIA is low, it is typically cascaded or cascoded to achieve a higher voltage gain. However, cascading poses stability concerns in closed-loop applications, while cascoding limits the output swing. This study introduces a gain-enhanced FIA that features cross-coupled body biasing. Through simulations, it is demonstrated that the proposed FIA designed using a 28-nm complementary metal-oxide-semiconductor technology with a 1-V power supply can achieve a high voltage gain (> 90 dB) suitable for dynamic open-loop applications. The proposed FIA can also be used as a closed-loop amplifier by adjusting the amount of positive feedback due to the cross-coupled body biasing. The capability of achieving a high gain with minimum-length devices makes the proposed FIA a promising candidate for low-power, high-speed sensor interface systems.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.5
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• pp.724-730
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• 2002

Digital communication systems are required to cause the minimum interference to adjacent channels, they must therefore employ the linear power amplifiers. In respect to linear power amplifiers, there are many linearization techniques. Feedforward power amplifier represent very wide bandwidth and high linearization capability. In the feedforward systems, overall efficiency is reduced due to the loss of delay line. In this paper, delay filter instead of transmission delay line adapted to get more high efficiency. Experimental results showed that ACLR (Adjacent Channel Leakage Ratio) has improved 17.43(dB), which is added 3.44(dB) by using the delay filter.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.637-640
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• 1998

A 35 ㎓ GaAs MMIC power amplifier was designed using a monolithic technology with AlGaAs/InGaAs/GaAs power PM-HEMTs, rectangualr spiral inductors and Si3N4 MIM capacitors. The GaAs power MESFETs in the input and output stages have total gate widths of 120 um and 320 um, respectively. Total S21 gain of 10.82dB and S11 of -16.26 dB were obtained from the designed MMIC power amplifier at 35 ㎓. And the chip size of the MMIC amplifier was 1.4$\times$0.8 $\textrm{mm}^2$

• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.179-182
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• 2002

In this paper, 2-stage Power amplifier with external bias controller for\ulcorner IMT-2000 handsets was designed using SiGe HBT with excellent linearity to 1\ulcornereduce size and weight. The designed amplifier has 26.5 dBm output power, 33% power added efficiency, and 22 dB linear power gain in 1920-1980MHz frequency range.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.2
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• pp.107-114
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• 2009

In this paper, high efficiency amplifier configuration is proposed using the reconfigurable power divider. In order to enhance average efficiency of linear power amplifiers for wireless communication, it is required to increase efficiency in low output power region. The proposed power divider operates in two modes, high power mode and low power mode, according to output power. In each mode, it allows impedance matches and low loss, which is made possible by employing two $\lambda/4$ coupled lines and two switches. The fabricated power divider shows the return loss ($S_{11}$) and insertion loss ($S_{21}$) of -16.49 dB and -0.83 dB, respectively, in low power mode. In high power mode, the measured return loss ($S_{11}$) and insertion loss ($S_{31}$) are -16.28 dB and -0.73 dB, respectively. This result successfully demonstrates the reconfigurability of the proposed power divider.