• ETRI Journal
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• v.39 no.2
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• pp.284-291
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• 2017

Drain-induced barrier lowering (DIBL) is one of the main parameters employed to indicate the short-channel effect for nano metal-oxide semiconductor field-effect transistors (MOSFETs). We propose a new physical model of the DIBL effect under two-dimensional approximations based on the energy-conservation equation for channel electrons in FETs, which is different from the former field-penetration model. The DIBL is caused by lowering of the effective potential barrier height seen by the channel electrons because a lateral channel electric field results in an increase in the average kinetic energy of the channel electrons. The channel length, temperature, and doping concentration-dependent DIBL effects predicted by the proposed physical model agree well with the experimental data and simulation results reported in Nature and other journals.

• Proceedings of the Korean Geotechical Society Conference
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• 2003.06a
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• pp.103-116
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• 2003

Rockfall Protection fence is one of the most common rockfall Protection methods in Korea. If rockfall protection fences are required along the road or railway, their location, height and capacity, in terms of the maximum kinetic energy that they can absorb, should be specified. Within this paper, the best practice of rockfall barrier is introduced. Modern rockfall simulations as a means to define risks, protection requirements, dynamic loading and height of potential structures and selection of appropriate placement is presented. Technical possibilities of rockfall barriers and their actual limits are presented. Safety concepts based on probabilistic approaches are proposed. Recent studies peformed in other countries show that Flexible Barriers are also a feasible system to stop and retain debris flows. Finally an outlook onto further development is given.

• Proceedings of the KSR Conference
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• 2003.05a
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• pp.68-81
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• 2003

Rockfall protection fence is one of the most common rockfall protection methods in Korea. If rockfall protection fences are required along the road or railway, their location, height and capacity, in terms of the maximum kinetic energy that they can absorb, should be specified. Within this paper, the best practice of rockfall barrier is introduced. Modern rockfall simulations as a means to define risks, protection requirements, dynamic loading and height of potential structures and selection of appropriate placement is presented. Technical possibilities of rockfall barriers and their actual limits are presented. Safety concepts based on probabilities approaches are proposed. Recent studies performed in other countries show that Flexible Barriers are also a feasible system to stop and retain debris flows. Finally an outlook onto further development is given.

• Journal of the Korean Ceramic Society
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• v.38 no.7
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• pp.639-642
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• 2001

전형적인 비저항-온도 특성을 갖는 BaTiO$_3$계 PTC 세라믹을 일반적인 세라믹 공정을 이용하여 제조하였고, 결정립계면에 형성된 전위장벽의 높이를 구하였다. ZnO 바리스터의 전위장벽을 구하기 위해 이용되었던 커패시턴스-전압 관계식과는 다른 새로운 관계식을 제안하였고, 기존의 비저항-온도 관계식을 다소 변경한 관계식을 이용하여 전위장벽을 구하였다. 두 관계식으로부터 구한 전위장벽의 높이는 매우 유사한 값을 보이고 있으며 타 연구자들에 의해 보고된 값과도 잘 일치하고 있다. 비저항-온도 관계식과 커패시턴스-전압 관계식을 이용하여 130-18$0^{\circ}C$ 구간에서 구한 전위장벽의 크기는 각각 0.41-0.76V와 0.36-0.80V이었다.

• Transactions of the Korean hydrogen and new energy society
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• v.34 no.6
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• pp.734-740
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• 2023

Hydrogen emphasis on safety management due to its high potential for accidents from wide explosive limits and low ignition energy. To prevent accidents, appropriate explosion-proof electrical equipment with installed to safe management of ignition sources. However, designing all facilities with explosion-proof structures can significantly increase costs and impose limitations. In this study, we optimize the barrier to effectively control the initial momentum in case of hydrogen release and form the control room as a non-hazardous area. We employed response surface method (RSM), the barrier distance, width and height of the barrier were set as variables. The Box-Behnken design method the selection of 15 cases, and FLACS assessed the presence of hazardous area. Analysis of variance (ANOVA) analysis resulting in an optimized barrier area. Through this methodology, the workplace can optimize the barrier according to the actual workplace conditions and classify reasonable hazardous area, which is believed to secure safety in hydrogen facilities and minimize economic burden.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.743-746
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• 2003

We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer splitting of Ge, to transfer 700nm think, single-crystal Ge films to Si substrates. Optical and electrical properties have been also observed on these samples. Triple-junction solar cell structures gown on these Ge/Si heterostructure templates show comparable photoluminescence intensity and minority carrier lifetime to a control structure grown on bulk Ge. When heavily doped p$^{+}$Ge/p$^{+}$Si wafer bonded heterostructures were bonded, ohmic interfacial properties with less than 0.3Ω$\textrm{cm}^2$ specific resistance were observed indicating low loss thermal emission and tunneling processes over and through the potential barrier. Current-voltage (I-V) characteristics in p$^{+}$Ge/pSi structures show rectifying properties for room temperature bonded structures. After annealing at 40$0^{\circ}C$, the potential barrier was reduced and the barrier height no longer blocks current flow under bias. From these observations, interfacial atomic bonding structures of hydrophobically wafer bonded Ge/Si heterostructures are suggested.ested.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.11
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• pp.2643-2648
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• 2015

This paper analyzes the phenomenon of drain induced barrier lowering(DIBL) for doping profiles in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to the change of doping profile to influence on potential distribution. As a results, the DIBL is significantly influenced by projected range and standard projected deviation, the variables of channel doping profiles. The change of DIBL shows greatly in the range of high doping concentration such as $10^{18}/cm^3$. The DIBL increases with decrease of channel length and increase of channel thickness, and with increase of bottom gate voltage and top/bottom gate oxide film thickness.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.203-212
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• 2010

In this paper, we present an analytical model for the first eigen energy level ($E_0$) of the carriers in the inversion layer in present generation MOSFETs, having ultrathin gate oxides and high substrate doping concentrations. Commonly used approaches to evaluate $E_0$ make either or both of the following two assumptions: one is that the barrier height at the oxide-semiconductor interface is infinite (with the consequence that the wave function at this interface is forced to zero), while the other is the triangular potential well approximation within the semiconductor (resulting in a constant electric field throughout the semiconductor, equal to the surface electric field). Obviously, both these assumptions are wrong, however, in order to correctly account for these two effects, one needs to solve Schrodinger and Poisson equations simultaneously, with the approach turning numerical and computationally intensive. In this work, we have derived a closed-form analytical expression for $E_0$, with due considerations for both the assumptions mentioned above. In order to account for the finite barrier height at the oxide-semiconductor interface, we have used the asymptotic approximations of the Airy function integrals to find the wave functions at the oxide and the semiconductor. Then, by applying the boundary condition at the oxide-semiconductor interface, we developed the model for $E_0$. With regard to the second assumption, we proposed the inclusion of a fitting parameter in the wellknown effective electric field model. The results matched very well with those obtained from Li's model. Another unique contribution of this work is to explicitly account for the finite oxide-semiconductor barrier height, which none of the reported works considered.

• Journal of the Korean Ceramic Society
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• v.27 no.1
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• pp.109-117
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• 1990

Magnetite for Water-based ferrofluid was synthesized by air oxidation of aqueous suspension in the pH range 7-12 at $65^{\circ}C$. The optimum condition of magneite formation was delineated by examining various physicochemcial properties such as Fe2+ content, phase characteristics, MHC and $\sigma$max. The point of zero charge of iron oxide powders obtained at various pH conditions were correlated with the oxidation state of Fe in the iron oxide. The magnetite powder prepared at pH 9 ws dispersed using sodium oleate and sodium dodecylbenzenesulfonate (SDBS) as dispersants, and the dispersion characteristics of the magnetite ferrofluid were examined by means of the fraction of solid dispersed, zeta potential data and FT-IR spectrum. A simple calculation on the potential energy of two interacting magnetite particles showed that the dispersion stability was directly correlated with height of the potential energy barrier or the shape of zeta potential.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.640-644
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• 1998

We have fabricated Sb/SiC(4H) Schottky barrier diode (SBD) of which characteristics compared with that of Ti/SiC(4H) SBD. The donor concentration of the n-type SiC(4H) obtained by capacitance-voltage (C-V) measurement was about $2.5{\times}10 ^{17}{\textrm}cm^{-3}$. The ideality factors of 1.31 was obtained from the slope of forward current-voltage (I-V) characteristics of Sb/SiC(4H) SBD at low current density. The breakdown field of Sb/SiC(4H) SBD under the reverse bias voltage was about $4.4{\times}10^2V$/cm. The built-in potential and the Schottky barrier height (SBH) of Sb/SiC(4H) SBD were 1.70V and 1.82V, respectively, which were determined by the analysis of C-V characteristics. The Sb/SiC(4H) SBH of 1.82V was higher than Ti/SiC(4H) SBH of 0.91V. However, the current density and reverse breakdown field of Sb/SiC(4H) were low as compared with those of Ti/SiC(4H). The Sb/SiC(4H), as well as the Ti/SiC(4H), can be utilized as the Shottky barrier contact for the high-power electronic device.