• 한국진공학회지
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• 제8권3A호
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• pp.238-244
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• 1999

Pt/SBT/Pt capacitors were fabricated using the MOD-derived $SrBi_{2x}Ta_2O_9$ (SBT) films and their ferroelectic and leakage current characteristics were investigated with post annealing at 400~$800^{\circ}C$. Although the MOD-derived SBT film exhibited the hysteresis loop typical for the leaky film, the well-saturated ferroelectric hysteresis loop could be obtained by post annealing the Pt/SBT/Pt capacitors at $550^{\circ}C$~$800^{\circ}C$. The remanent polarization $2P_r$ of the SBT film exhibited a maximum value of 9.72$\mu\textrm{cm}^2$ with post annealing at $600^{\circ}C$, and then decreased with increasing the post annealing temperature above $600^{\circ}C$. The MOD-derived SBT films exhibited the high leakage current density of ~$10^{-3} \textrm{A/cm}^2$ at 75kV/cm. With post annealing the Pt/SBT/Pt capacitor at 600~$800^{\circ}C$, however, the leakage current density decreased remarkably to less than $10^{-6}\textrm{A/cm}^2$ at 75kV/cm.

• Journal of Korean Vacuum Science & Technology
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• 제6권2호
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• pp.79-83
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• 2002

As Ag does not form my silicide on Si surfaces, Ag wire is a candidate for self-assembled nanowire on the reconstructed and single-domain Si(5 5 12)-2 $\times$ 1. In the present study, various Ag coverages and post-annealing temperatures had been tested to fabricate a Ag nanowire with high aspect ratio. When Ag coverage was less than 0.03 ML and the post-annealing temperature was 500(C, Ag atoms preferentially adsorbed on the tetramer sites resulting in Ag wires with an inter-row spacing of ~5 nm. However, its aspect ratio is relatively small and its height is also not even. On the other hand, the Ag-posited surface completely loses its reconstruction even with the same annealing at 500 $\^{C}$ if the initial coverage exceeds 0.05 ML. But the additional subsequent annealing at 700$\^{C}$ and slow-cooling process recovers the well-ordered Ag chain with relatively high aspect ratio on the same tetramer sites. It can be understood that, in the double step annealing process, the lower temperature annealing is required for cohesion of adsorbed Ag atoms and the higher temperature annealing is for providing Ag atoms to the tetramer sites.

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.110-115
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• 2000

$SrBi_2Ta_2O_9$ thin films were deposited at room temperature on the usual (111) oriented Pt bottom electrodes using r.f. magnetron sputtering, and then post-annealed at 650-$800^{\circ}C$ for 30min in oxygen flow. Low temperature processing which shows the preferred oriented SBT thin films was obtained by controlling the sputtering pressure and/or Sr content in target. The orientation and grain growth behavior of SBT thin films were dependent on Sr contents in films. With increasing the excess Bi content up to 50% in SBT thin films, it was possible to lower the onset temperature of grain growth. The c-axis preferred oriented SBT thin films were well-grown under the condition of low post-annealing($650^{\circ}C$) by lowering post-annealing pressure. After $10^{11}$ switching cycles, no polarization degradation was observed in both preferred oriented SBT capacitors.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.88-89
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• 2007

ZnO thin films were deposited on $Al_2O_3$ (alumina) substrates by pulsed laser deposition (PLD) using Nd:YAG laser with a wavelength of 355nm, at room temperature and oxygen partial pressure of 1, 10, 30, 50, 100, and 200m Torr. Furthermore, deposited ZnO thin films were post-annealed at 400, 550, $600^{\circ}C$. The effects of oxygen partial pressure and post-annealing temperature on structural properties of the deposited films have been investigated by means of X-ray diffraction (XRD), and atomic force microscope (AFM), respectively. It has been found that ZnO thin films exhibit c-axis orientation, exhibiting an increased foil width at half maximum (FWHM) value of (002) diffraction peak at 30m Torr oxygen partial pressure and higher post-annealing temperature ($700^{\circ}C$).

• 한국결정성장학회지
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• 제18권1호
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• pp.50-55
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• 2008

졸-겔 공정을 이용하여 유리기판 위에 Al-doped ZnO(AZO) 박막을 제조하였고, AZO 박막의 특성에 대하여 Al 전구체 종류 및 post-annealing 온도가 미치는 영향에 대하여 고찰하였다. AZO 박막 제조용 졸은 zinc acetate, EtOH, MEA 등을 사용하여 제조하였고, Al doping 을 위한 전구체로는 aluminum nitrate 와 aluminum chloride 를 사용하였다. Sol 내의 Zn 농도는 0.5 mol/l 로 하였고, Al doping 양은 Zn 대비 1 at%로 고정하였다. 유리기판 위에 졸을 spin-coating 한 후 $550^{\circ}C$에서 2 시간 동안 열처리한 후, $N_2$와 $H_2$의 비가 9 : 1인 환원 분위기 내에서 $300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C$인 온도에서 2시간 동안 post-annealing을 진행하였다. 제조된 AZO 박막의 구조적, 전기적, 광학적 특성은 XRD, FE-SEM, AFM, Hall effect measurement system 및 UV-Visible spectroscopy를 이용하여 분석하였다. Al 전구체로서 aluminum nitrate 를 사용한 경우가 aluminum chloride 를 사용하여 제조한 AZO 박막보다 우수한 광학적, 전기적 특성을 나타내었으며, post-annealing 온도가 증가함에 따라 비저항과 투과율은 감소하였다. $500^{\circ}C$에서 post-annealing한 AZO 박막의 전기비저항 값은 $2{\times}10^{-3}{\Omega}{\cdot}cm$이었고, 투과율은 $300^{\circ}C$에서 91%로 가장 높게 나타났다.

• Transactions on Electrical and Electronic Materials
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• 제3권1호
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• pp.14-17
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• 2002

The effects of substrate temperatures and annealing temperatures on the microstructures and ferroelectric properties of PbZ $r_{0.52}$ $Ti_{0.48}$ $O_3$(PZT) thin fims prepared by pulsed laser deposition (PLD) were investigated. For this purpose, the PZT films were deposited at various substrate temperatures (400~$600^{\circ}C$) with post annealing process in oxygen atmosphere. The single perovskite phase was formed at the deposition temperature of 500 to 55$0^{\circ}C$ without post annealing and the PZT films deposited below 50$0^{\circ}C$ formed the single phase with post annealing at $650^{\circ}C$. The grain size of the films increased and the grain boundary of the films was clearly defined as the substrate temperature increased from 400 to 55$0^{\circ}C$. The remnant polarization (Pr) and the coercive field (Ec) of the films deposited at 55$0^{\circ}C$ and annealed at $650^{\circ}C$ were 34.3 $\mu$C/c $m^2$and 60.2 kV/cm, respectively.y.y.

• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1108-1114
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• 1998

$BaTiO_3$ thin films preferred c-axis orientation for the potential application of ferroelectric memory devices were deposited on silicon substrates(100) by RF sputtering and annealed at 800 and 900[$^{\circ}C$] in air. The BT(100)/BT(110) peak ratio of the sputtered sample was decreased with post-annealing in air. According to increasing with annealing temperature and time, the peak ratio of BT(100)/BT(110) was decreased and the surface density of thin film was high. Dielectric characteristics of $BaTiO_3$ thin film was measured as a function of annealing temperature and frequency. The dielectric constants were increased with annealing and decreased with frequency by space charge polarization and dipole polarization below 600[kHz]. The remanent polarization and coercive field in P-E hysteresis loop of $BaTiO_3$thin film were increased with the annealing temperature in air. The remanent polarization and coercive filed annealed at 800[$^{\circ}C$] for 1hr were 1.2[$\mu$C/$cm^2$] and 200[kV/cm]

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.125-128
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• 2000

ZnO thin films on silicon substrates have been deposited by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the effect of oxygen post-annealing treatment on the property of ZnO thin films, deposited film has been annealed at the substrate temperature of $440^{\circ}C$. After post-annealing treatment in the oxygen ambient, the stoichiometry of ZnO film has been characterized be improved which results in higher UV emission intensity of photoluminescence.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.119-122
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• 2001

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique at the oxygen pressure of 350 mTorr. In order to investigate the effect of post-annealing treatment with oxygenn pressure of 350 mTorr on the optical property of ZnO thin films, films have been annealed at various substrate temperatures after deposition. After post-annealing treatment in the oxygen ambient, the optical properties of the ZnO thin films were characterized by PL(Photoluminescence) and structural properties of the ZnO were characterized by XRD, and have investigated structural property and optical property for application of light emission device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.136-139
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• 1999

The post-annealing treatments on RF (Radio Frequency) magnetron sputtered PZI(Pb$\_$1.05/(Zr$\_$0.52/, Ti$\_$0.48/)O$_3$thin films(4000${\AA}$) have been investigated. for a structure of PZT/Pt/Ti/SiO$_2$/Si Crystallization pproperties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature. We were able to obtain a perovskite structure of PZT at a low temperature of 600$^{\circ}C$. P-E curves of Pd/PZT/Pt capacitor annealed at 700$^{\circ}C$ demonstrate typical hysteresis loops. The measured values of P$\_$r/, E$\_$c/, by post annealed at 700$^{\circ}C$ were 12.1 ${\mu}$C/$\textrm{cm}^2$, 120KV/cm respectively.