• Title/Summary/Keyword: Post-annealing Pressure

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Effect of Post Deposition Annealing Temperature on the Structural, Optical and Electrical Properties of GZO/Cu Films (진공열처리온도에 따른 GZO/Cu 박막의 구조적, 광학적, 전기적 특성 변화)

  • Kim, Dae-Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.9
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    • pp.739-743
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    • 2011
  • Ga doped ZnO (GZO)/Cu bi-layer films were deposited with RF and DC magnetron sputtering on glass substrate and then the effect of post deposition annealing temperature on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes in gas pressure of $1{\times}10^{-3}$ Torr and the annealing temperatures were 150 and $300^{\circ}C$. With increasing annealing temperature, GZO/Cu films showed an increment in the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The GZO/Cu films annealed at $300^{\circ}C$ showed the highest optical transmittance of 70% and also showed the lowest electrical resistance of $85\;{\Omega}/{\Box}$ in this study.

Preparation of ${K_3}{Li_2}{Nb_5}{O_{15}}$(KLN) Thin Films by Heat Treatment Methods (열처리방법에 따른 ${K_3}{Li_2}{Nb_5}{O_{15}}$(KLN)박막의 제작)

  • 김광태;박명식;이동욱;조상희
    • Journal of the Korean Ceramic Society
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    • v.37 no.8
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    • pp.731-738
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    • 2000
  • KLN(K3Li2Nb5O15) has attracted a great deal of attention for their potential usefulness in piezoelectric, electro-optic, nonlinear optic, and pyroelectirc devices. Especially, the KLN single crystal has been studied in the field of optics and electronics. However it is hard to produce good quality single crystals due to the crack propagation during crystal growing. One of the solutions of this problem is prepartion of thin film. But the intensive study has not been conducted so far. In this study, after the KLN thin film were prepared by R.F. magnetron Sputtering method on SiO2/Si substrate, the post-annealing methods of RTA(rapid thermal annealin) and IPA(insitu post annealing) were employed. The deposition condition of KLN thin film was RF power(100 W), Working pressure(100 mtorr). The commonness of both RAT and IPA was that the higher were deposition and post annealing temperature, the higher was the intensity of XRD but the less surface roughness. The difference of post-annealing methods affected XRD phase and surface condition very much. And in IPA process, the influence of O2 had much effect on the formation of KLN phase.

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Electrical Conductivity of a $TiO_2$ Thin Film Deposited on $Al_2O_3$ Substrates by CVD

  • Hwang, Cheol-Seong;Kim, Hyeong-Joon
    • The Korean Journal of Ceramics
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    • v.1 no.1
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    • pp.21-28
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    • 1995
  • Electrical conductivity of $TiO_2$ thin films, deposited on $Al_2O_3$ substrates by metal organic chemical vapor deposition (MOCVD), was measured by four-point probe method in a temperature range from $800^{\circ}C$ to $1025^{\circ}C$ and an oxygen partial pressure range from $2.7{\times}10^{-5}$ atm to 1 atm. In the low oxygen partial pressure region n-type conduction was dominant, but in the high oxygen partial pressure region p-type conduction behavior appeared due to substitution of Ti ions by Al ions, which were diffused from the substrate during post deposition annealing process. Electrical conductivity of the film decreases in the n-type region and increases in the p-type region as the oxygen partial pressure increases. The transition points, which show the minimum conductivity, shifted to the higher oxygen partial pressure region as the measuring temperature increased, but it shifted to lower oxygen partial pressure region with an increase in the post annealing temperature. The results were also discussed with the possible defect models.

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Effect of Heat Treatments on the Steel Tube Hydroformabillity (열처리 영향도에 따른 강관 하이드로포밍 성형성 분석)

  • Park, Kwang-Soo;Kim, Bong-Joon;Moon, Young-Hoon
    • Journal of the Korean Society for Heat Treatment
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    • v.18 no.4
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    • pp.223-228
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    • 2005
  • Tube hydroforming provides a number of advantages over conventional stamping process, including fewer secondary operation, weight reduction, assembly simplification, adaptability to forming of complex structural components and improved structural strength and stiffness. It can produce wide range of products such as subframe, engine cradle, and exhaust manifold. In this study, the effect of the heat treatment conditions such as post seam annealing (PSA) and bright annealing (BA) on the ovality and hydro-formability of steel tubes has been investigated. Hydroformabilities have been estimated by the bulging heights obtained at various processing parameters such as internal pressure, axial feeding and heat treatment conditions. The ovality and forming height are strongly influenced by material properties after heat treatments.

Effects of Annealing Gas and Pressure Conditions on the Electrical Characteristics of Tunneling FET (가스 및 압력조건에 따른 Annealing이 Tunneling FET의 전기적 특성에 미치는 영향)

  • Song, Hyun-Dong;Song, Hyeong-Sub;Babu, Eadi Sunil;Choi, Hyun-Woong;Lee, Hi-Deok
    • Journal of IKEEE
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    • v.23 no.2
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    • pp.704-709
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    • 2019
  • In this paper, the electrical characteristics of tunneling field effect transistor(TFET) was studied for different annealing conditions. The TFET samples annealed using hydrogen forming gas(4 %) and Deuterium($D_2$) forming gas(4 %). All the measurements were conducted in noise shielded environment. The results show that subthreshold slope(SS) decreased by 33 mV/dec after annealing process compared to before annealing. Under various temperature range, the noise is improved by average of 31.2 % for 10 atm Deuterium gas at $V_G=3V$ condition. It is also noticed that, post metal annealing with $D_2$ gas reduces the noise by average of 30.7 % at $I_D=100nA$ condition.

Deposition Pressure Dependent Electric Properties of (Hf,Zr)O2 Thin Films Made by RF Sputtering Deposition Method

  • Moon, S.E.;Kim, J.H.;Im, J.P.;Lee, J.;Im, S.Y.;Hong, S.H.;Kang, S.Y.;Yoon, S.M.
    • Journal of the Korean Physical Society
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    • v.73 no.11
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    • pp.1712-1715
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    • 2018
  • To study the applications for ferroelectric non-volatile memory and ferroelectric memristor, etc., deposition pressure dependent electric the properties of $(Hf,\;Zr)O_2$ thin films by RF sputtering deposition method were investigated. The bottom electrode was TiN thin film to produce stress effect on the formation of orthorhombic phase and top electrode was Pt thin film by DC sputtering deposition. Deposition pressure was varied along with the same other deposition conditions, for example, sputtering power, target to substrate distance, post-annealing temperature, annealing gas, annealing time, etc. The structural and electric properties of the above thin films were investigated. As a result, it is confirmed that the electric properties of the $(Hf,\;Zr)O_2$ thin films depend on the deposition pressure which affects structural properties of the thin films, such as, structural phase, ratio of the constituents, etc.

The Effect of Tail State on the Electrical and the Optical Properties in Amorphous IGZO (비정질 InGaZnO4 박막의 전기적, 광학적 특성간의 상관관계 연구)

  • Bae, Sung-Hwan;Yoo, Il-Hwan;Kang, Suk-Ill;Park, Chan
    • Journal of the Korean Ceramic Society
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    • v.47 no.4
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    • pp.329-332
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    • 2010
  • In order to investigate the effect of tail state on the electrical and the optical properties in amorphous IGZO(a-IGZO), a-IGZO films were deposited at room temperature on fused silica substrats using pulsed laser deposition method. The laser pulse energy was used as the processing parameter. In-situ post annealing was carried out at $150^{\circ}C$ right after the film deposition. The $O_2$ partial pressure during the deposition and the post annealing was fixed to 10mTorr. The carrier mobility of the a-IGZO films had a range from 2 to $18\;cm^2/Vs$ at carrier concentrations greater than $10^{18}\;cm^{-3}$. As the laser energy density increased, the Hall mobility increased. And post annealing improved the Hall mobility, as well. The optical property was examined using the ultraviolet-visible spectroscopy. The a-IGZO films that have low Hall mobility exhibited stronger and broader absorption tails in >3.0 eV region. Post annealing reduced the intensity of the tail-like absorption. The absorption tail in a-IGZO films is an important factor which affects the electrical and the optical properties.

A Study on the Mechanical Behavior of Welded Parts in Thick Plate during Post Welding Heat Treatment (厚板熔接部의 應力除去 熱處理時의 力學的 擧動에 關한 硏究)

  • 방한서
    • Journal of Welding and Joining
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    • v.11 no.4
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    • pp.103-111
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    • 1993
  • Recently, several high-tensile steels(e.g. 80kg and above, $2^{1/4}Cr$-1Mo)having good quality to high temperature and pressure-resistance are widely used to construct petroleum-plant and pressure vessel of heat or nuclear-power plant. However, in the steels, reheating crack at grain boundaries of the heat affected zone(HAZ) occures during post welding heat treatment(PWHT)to remove welding residual stress. In order to study theoretically the characteristics of reheating crack created by PWHT, the computer program of three-dimensional thermal-elasto-plasto-creep analysis based on finite element method are developed, and then the mechanical behavior(history of creep strain accumulation and stress relaxation, etc)of welded join in thick plate during PWTH is clarified by the numerical results.

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Electrical and optical properties of Li & P co-doped ZnO thin film by PLD

  • Choi, Im-Sic;Kim, Don-Hyeong;Heo, Young-Woo;Lee, Joon-Hyung;Kim, Jeong-Joo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.209-209
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    • 2009
  • Fabrication of p-type ZnO has already proven difficult and usually inconsistent despite numerous worldwide efforts. Many research groups studied electrical and optical properties P, Li, As, N single doped ZnO thin film. In P-doped ZnO thin film, the reproducibility of p-type conduction with $P_2O_5$ as a dopant source was shown to be relatively poor. In this study, we made P single doped and Li & P co-doped ZnO target. To investigate electrical and optical properties of P single doped and Li & P co-doped ZnO thin film using $P_2O_5$ and $Li_3PO_4$ dopant source respectively was deposited by PLD. The growth temperature was changed 500, $700^{\circ}C$ and various oxygen partial pressure and post-annealing conditions was changed temperature, different gas ambient($O_2,N_2$). We investigate that how to change electrical and optical properties as function of growth temperature, oxygen partial pressure and post-annealing(RTA).

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Fabrication and Characterization of Ni-Cr Alloy Thin Films for Application to Precision Thin Film Resistors

  • Lee, Boong-Joo;Shin, Paik-Kyun
    • Journal of Electrical Engineering and Technology
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    • v.2 no.4
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    • pp.525-531
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    • 2007
  • Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.