• Title/Summary/Keyword: Post electrode

Search Result 148, Processing Time 0.032 seconds

Effect of chemical in post Ru CMP Cleaning solutions on abrasive particle adhesion and removal (Post Ru CMP Cleaning에서 연마입자의 흡착과 제거에 대한 chemical의 첨가제에 따른 영향)

  • Kim, In-Kwon;Kim, Tae-Gon;Cho, Byung-Gwun;Son, Il-Ryong;Park, Jin-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.11a
    • /
    • pp.529-529
    • /
    • 2007
  • Ruthenium (Ru) is a white metal and belongs to platinum group which is very stable chemically and has a high work function. It has been widely studied to apply Ru as an electrode material in memory devices and a Cu diffusion barrier metal for Cu interconnection due to good electrical conductivity and adhesion property to Cu layer. To planarize deposited Ru layer, chemical mechanical planarization(CMP) was suggested. However, abrasive particle can induce particle contamination on the Ru layer surface during CMP process. In this study, zeta potentials of Ru and interaction force of alumina particles with Ru substrate were measured as a function of pH. The etch rate and oxidation behavior were measured as a function of chemical concentration of several organic acids and other acidic and alkaline chemicals. PRE (particle removal efficiency) was also evaluated in cleaning chemical.

  • PDF

Fabrication of IGZO-based Oxide TFTs by Electron-assisted Sputtering Process

  • Yun, Yeong-Jun;Jo, Seong-Hwan;Kim, Chang-Yeol;Nam, Sang-Hun;Lee, Hak-Min;O, Jong-Seok;Kim, Yong-Hwan
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.273.2-273.2
    • /
    • 2014
  • Sputtering process has been widely used in Si-based semiconductor industry and it is also an ideal method to deposit transparent oxide materials for thin-film transistors (TFTs). The oxide films grown at low temperature by conventional RF sputtering process are typically amorphous state with low density including a large number of defects such as dangling bonds and oxygen vacancies. Those play a crucial role in the electron conduction in transparent electrode, while those are the origin of instability of semiconducting channel in oxide TFTs due to electron trapping. Therefore, post treatments such as high temperature annealing process have been commonly progressed to obtain high reliability and good stability. In this work, the scheme of electron-assisted RF sputtering process for high quality transparent oxide films was suggested. Through the additional electron supply into the plasma during sputtering process, the working pressure could be kept below $5{\times}10-4Torr$. Therefore, both the mean free path and the mobility of sputtered atoms were increased and the well ordered and the highly dense microstructure could be obtained compared to those of conventional sputtering condition. In this work, the physical properties of transparent oxide films such as conducting indium tin oxide and semiconducting indium gallium zinc oxide films grown by electron-assisted sputtering process will be discussed in detail. Those films showed the high conductivity and the high mobility without additional post annealing process. In addition, oxide TFT characteristics based on IGZO channel and ITO electrode will be shown.

  • PDF

Composition Control of a Light Absorbing Layer of CuInSe2 Thin Film Solar Cells Prepared by Electrodeposition (전착법을 이용한 CuInSe2 박막태양전지 광활성층의 조성 조절)

  • Park, Young-Il;Kim, Donghwan;Seo, Kyungwon;Jeong, Jeung-Hyun;Kim, Honggon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.26 no.3
    • /
    • pp.232-239
    • /
    • 2013
  • Thin light-active layers of the $CuInSe_2$ solar cell were prepared on Mo-coated sodalime glass substrates by one-step electrodeposition and post-annealing. The structure, morphology, and composition of $CuInSe_2$ film could be controlled by deposition parameters, such as the composition of metallic precursors, the concentration of complexing agents, and the temperature of post-annealing with elemental selenium. A dense and uniform Cu-poor $CuInSe_2$ film was successfully obtained in a range of parametric variation of electrodeposition with a constant voltage of -0.5 V vs. a Ag/AgCl reference electrode. The post-annealing of the film at high temperature above $500^{\circ}C$ induced crystallization of $CuInSe_2$ with well-developed grains. The KCN-treatment of the annealed $CuInSe_2$ films further induced Cu-poor $CuInSe_2$ films without secondary phases, such as $Cu_2Se$. The structure, morphology, and composition of $CuInSe_2$ films were compared with respect to the conditions of electrodeposition and post-annealing using SEM, XRD, Raman, AES and EDS analysis. And the conditions for preparing device-quality $CuInSe_2$ films by electrodeposition were proposed.

The Effects of Electrode Materials on the Electrical Properties of $Ta_2O_5$ Thin Film for DRAM Capacitor (DRAM 커패시터용 $Ta_2O_5$ 박막의 전기적 특성에 미치는 전극의존성)

  • Kim, Yeong-Wook;Gwon, Gi-Won;Ha, Jeong-Min;Kang, Chang-Seog;Seon, Yong-Bin;Kim, Yeong-Nam
    • Korean Journal of Materials Research
    • /
    • v.1 no.4
    • /
    • pp.229-235
    • /
    • 1991
  • A new electrode material for $Ta_2O_5$ capacitor was developed to obtain both high dielectric constant and improved electrical properties for use in DRAM. High leakage current and low breakdown field of as-deposited $Ta_2O_5$ film on Si is due to the reduction of $Ta_2O_5$ by silicon at $Ta_2O_5$/electrode interface. $Dry-O_2$ anneal improves the electrical properties of $Ta_2O_5$ capacitor with Si electrode, but it thickens the interfacial oxide and lowers the dielectric constant, subsequently. $Ta_2O_5$ capacitor with TiN exectrode shows better electrical properties and higher dielectric constant than post heat treated $Ta_2O_5$ film on Si. No interfacial oxide layer at $Ta_2O_5$/TiN interface suggests that there\`s no Interaction between $Ta_2O_5$ and electrode. TiN is a adequate electrode material for $Ta_2O_5$ capacitor.

  • PDF

Effect of the Configuration of Contact Type Textile Electrode on the Performance of Heart Activity Signal Acquisition for Smart Healthcare (스마트 헬스케어를 위한 심장활동 신호 검출용 접촉식 직물전극의 구조가 센싱 성능에 미치는 영향)

  • Cho, Hyun-Seung;Koo, Hye-Ran;Yang, Jin-Hee;Lee, Kang-Hwi;Kim, Sang-Min;Lee, Jeong-Hwan;Kwak, Hwy-Kuen;Ko, Yun-Su;Oh, Yun-Jung;Park, Su-Youn;Kim, Sin-Hye;Lee, Joo-Hyeon
    • Science of Emotion and Sensibility
    • /
    • v.21 no.4
    • /
    • pp.63-76
    • /
    • 2018
  • The purpose of this study was to investigate the effect of contact type textile electrode structure on heart activity signal acquisition for smart healthcare. In this study, we devised six contact type textile electrodes whose electrode size and configuration were manipulated for measuring heart activity signals using computerized embroidery. We detected heart activity signals using a modified lead II and by attaching each textile electrode to the chest band in four healthy male subjects in a standing static posture. We measured the signals four times repeatedly for all types of electrodes. The heart activity signals were sampled at 1 kHz using a BIOPAC ECG100, and the detected original signals were filtered through a band-pass filter. To compare the performance of heart activity signal acquisition among the different structures of the textile electrodes, we conducted a qualitative analysis using signal waveform and size as parameters. In addition, we performed a quantitative analysis by calculating signal power ratio (SPR) of the heart activity signals obtained through each electrode. We analyzed differences in the performance of heart activity signal acquisition of the six electrodes by performing difference and post-hoc tests using nonparametric statistic methods on the calculated SPR. The results showed a significant difference both in terms of qualitative and quantitative aspects of heart activity signals among the tested contact type textile electrodes. Regarding the configurations of the contact type textile electrodes, the three-dimensionally inflated electrode (3DIE) was found to obtain better quality signals than the flat electrode. However, regarding the electrode size, no significant difference was found in performance of heart signal acquisition for the three electrode sizes. These results suggest that the configuration method (flat/3DIE), which is one of the two requirements of a contact type textile electrode structure for heart activity signal acquisition, has a critical effect on the performance of heart activity signal acquisition for wearable healthcare. Based on the results of this study, we plan to develop a smart clothing technology that can monitor high-quality heart activity without time and space constraints by implementing a clothing platform integrated with the textile electrode and developing a performance improvement plan.

Effect of Substrate Preheating on the Characteristics of Flexible and Transparent ITO Electrodes Grown by Roll-to-Roll Sputtering for Touch Panel Applications (기판 열처리가 롤투롤 스퍼터를 이용하여 성장시킨 터치 패널용 유연 ITO 투명 전극의 특성에 미치는 효과 연구)

  • Kim, Dong-Ju;Lee, Won-Young;Kim, Bong-Seok;Kim, Han-Ki
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.23 no.4
    • /
    • pp.327-332
    • /
    • 2010
  • We report on the effect of PET substrate preheating on the characteristics of the flexible and transparent indium tin oxide (ITO) electrode grown by a specially designed roll-to-roll sputtering system for touch panel applications. It was found that electrical and optical properties of the roll-to-roll sputter grown ITO film were critically dependent on the preheating of the PET substrate. In addition, the roll-to-roll sputter-grown ITO film after post annealing test at $140^{\circ}C$ for 90 min showed stable electrical and optical properties. The low sheet resistance and high optical transmittance of the ITO film grown on the preheated PET substrate demonstrate that the preheating process before ITO sputtering is one of the effective way to improve the characteristics of ITO/PET film. Furthermore, the superior flexibility of the ITO electrode grown on the preheated PET substrate indicates that the preheating treatment is a promising technique to obtain robust ITO/PET sample for touch panel applications.

Ionization Behaviors by Types of Soil due to Lightning Impulse Voltages in a Hemishperical Electrode System (반구형 전극계에서 뇌임펄스전압에 의한 토양의 종류별 이온화 특성)

  • Lee, Kyu-Sun;Park, Geon-Hun;Kim, Hoe-Gu;Lee, Bok-Hee
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.58 no.1
    • /
    • pp.119-125
    • /
    • 2009
  • This paper deals with the characteristics of soil ionization affecting the dynamic performance of grounding systems under lightning impulse voltage. A concentric hemispherical electrode system was employed in order to facilitate the field calculation and analysis of the experimental results. The parameters such as the ionization threshold and breakdown field intensity, the pre-ionization and the post ionization resistances, the time-lag to ionization, the transient impedance, the equivalent ionized radius for various soil media were measured and analyzed. The dynamic characteristics of ionization processes under lightning impulse voltage are strongly dependent on the types of soil and water content. As a result, a soil ionization reduces the ground resistance and there is a little effect of applied impulse polarity on the soil ionization threshold field intensity. Although the ionization threshold field intensity of wet clay with 30% water content is the highest, its ionized zone was found to be the smallest amongst the test samples.

Analysis of Failed Spinal Cord Stimulation Trials in the Treatment of Intractable Chronic Pain

  • Jang, Hyun-Dong;Kim, Min-Su;Chang, Chul-Hoon;Kim, Sang-Woo;Kim, Oh-Lyong;Kim, Seong-Ho
    • Journal of Korean Neurosurgical Society
    • /
    • v.43 no.2
    • /
    • pp.85-89
    • /
    • 2008
  • Objective: The purpose of this study is to identify the factors affecting the failure of trials (<50% pain reduction in pain for trial period) to improve success rate of spinal cord stimulation (SCS) trial. Methods: A retrospective review of the failed trials (44 patients, 36.1 %) among the patients (n=122) who underwent SCS trial between January 1990 and December 1998 was conducted. We reviewed the causes of failed trial stimulation, age, sex, etiology of pain, type of electrode, and third party support. Results: Of the 44 patients, 65.9% showed unacceptable pain relief in spite of sufficient paresthesia on the pain area with trial stimulation. Four of six patients felt insufficient paresthesia with stimulation had the lesions of the spinal cord. Seventy five percent of the patients experienced unpleasant or painful sensation during stimulation had allodynia dominant pain. Third-party involvement, sex, age and electrode type had no influence on the outcome. Conclusion: We conclude that SCS trial is less effective for patients with neuropathic pain of cord lesions, postherpetic neuropathy or post-amputation state. Further, patients with allodynia dominant pain can feel unpleasant or painful during trial stimulation.

Deposition Pressure Dependent Electric Properties of (Hf,Zr)O2 Thin Films Made by RF Sputtering Deposition Method

  • Moon, S.E.;Kim, J.H.;Im, J.P.;Lee, J.;Im, S.Y.;Hong, S.H.;Kang, S.Y.;Yoon, S.M.
    • Journal of the Korean Physical Society
    • /
    • v.73 no.11
    • /
    • pp.1712-1715
    • /
    • 2018
  • To study the applications for ferroelectric non-volatile memory and ferroelectric memristor, etc., deposition pressure dependent electric the properties of $(Hf,\;Zr)O_2$ thin films by RF sputtering deposition method were investigated. The bottom electrode was TiN thin film to produce stress effect on the formation of orthorhombic phase and top electrode was Pt thin film by DC sputtering deposition. Deposition pressure was varied along with the same other deposition conditions, for example, sputtering power, target to substrate distance, post-annealing temperature, annealing gas, annealing time, etc. The structural and electric properties of the above thin films were investigated. As a result, it is confirmed that the electric properties of the $(Hf,\;Zr)O_2$ thin films depend on the deposition pressure which affects structural properties of the thin films, such as, structural phase, ratio of the constituents, etc.

Metal Oxide Thin Film Transistor with Porous Silver Nanowire Top Gate Electrode for Label-Free Bio-Relevant Molecules Detection

  • Yu, Tae-Hui;Kim, Jeong-Hyeok;Sang, Byeong-In;Choe, Won-Guk;Hwang, Do-Gyeong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.268-268
    • /
    • 2016
  • Chemical sensors have attracted much attention due to their various applications such as agriculture product, cosmetic and pharmaceutical components and clinical control. A conventional chemical and biological sensor is consists of fluorescent dye, optical light sources, and photodetector to quantify the extent of concentration. Such complicated system leads to rising cost and slow response time. Until now, the most contemporary thin film transistors (TFTs) are used in the field of flat panel display technology for switching device. Some papers have reported that an interesting alternative to flat panel display technology is chemical sensor technology. Recent advances in chemical detection study for using TFTs, benefits from overwhelming progress made in organic thin film transistors (OTFTs) electronic, have been studied alternative to current optical detection system. However numerous problems still remain especially the long-term stability and lack of reliability. On the other hand, the utilization of metal oxide transistor technology in chemical sensors is substantially promising owing to many advantages such as outstanding electrical performance, flexible device, and transparency. The top-gate structure transistor indicated long-term atmosphere stability and reliability because insulator layer is deposited on the top of semiconductor layer, as an effective mechanical and chemical protection. We report on the fabrication of InGaZnO TFTs with silver nanowire as the top gate electrode for the aim of chemical materials detection by monitoring change of electrical properties. We demonstrated that the improved sensitivity characteristics are related to the employment of a unique combination of nano materials. The silver nanowire top-gate InGaZnO TFTs used in this study features the following advantages: i) high sensitivity, ii) long-term stability in atmosphere and buffer solution iii) no necessary additional electrode and iv) simple fabrication process by spray.

  • PDF