• Journal of Advanced Marine Engineering and Technology
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• v.39 no.1
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• pp.81-85
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• 2015

The organic/inorganic hybrid photovoltaic devices have been studied using Poly(3-hexylthiophene-2,5-diyl) (P3HT) : [6, 6]-Phenyl C61 butyric acid methyl ester (PCBM) and GaN. We traced the effect of short circuit current density with different annealing method under the various concentration and ratio of P3HT:PCBM. During the pre-annealing course, the heat treatments were performed each time at low temperature after the organic layer coated and the samples were heated at high temperature through one or two steps under the post-annealing process. It revealed that the samples with post-annealing process had higher values of short circuit current density than the other samples upon pre-annealing. And the interesting high short circuit current density features were observed at 1:1 mixing ratio and 1wt% of P3HT:PCBM.

• Journal of the Korean Society for Heat Treatment
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• v.25 no.2
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• pp.85-89
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• 2012

Transparent conductive ZnO/Ag/ZnO (ZAZ) multilayer films were deposited by Radio frequency (RF) magnetron sputtering and direct current (DC) magnetron sputtering. The effects of post deposition vacuum annealing temperature on the structural, electrical and optical properties of the ZAZ multilayer films were investigated. The thickness of ZAZ films is kept constant at ZnO 50 nm/Ag 5nm/ZnO 45 nm, while the vacuum annealing temperatures were varied from 200 and $400^{\circ}C$, respectively. As-deposited ZAZ films exhibit a sheet resistance of $6.1{\Omega}/{\Box}$ and optical transmittance of 72.7%. By increasing annealing temperature to $200^{\circ}C$, the resistivity decreased to as low as $5.3{\Omega}/{\Box}$ and optical transmittance also increased to as high as 82.1%. Post-deposition annealing of ZAZ multilayer films lead to considerably lower electrical resistivity and higher optical transparency, simultaneously by increased crystallization of the films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.3-4
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• 2006

In this paper, a nickel silicide technology with post-silicidation annealing effect for thin film SOI devices is investigated in detail. Although lower resistivity Ni silicide can be easily obtained at low forming temperature, poor thermal stability and changing of characteristic are serious problems during the post silicidation annealing like ILD (Inter Layer Dielectric) deposition or metallization. So these effects are observed as deposited Ni thickness differently on As doped SOI (Si film 30nm). Especially, the sheet resistance of Ni thickness deposited 20nm was lower than 30nm before the post silicidation annealing. But after the post silicidation annealing, the sheet resistance was changed. Therefore, in thin film SOI MOSFETs or Ni-FUSI technology that the Si film is less than 50nm, it is important to decide the thickness of deposited Ni in order to avoid forming high resistivity silicide.

• Clean Technology
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• v.15 no.3
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• pp.202-209
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• 2009

N-incorporated $WO_3$ ($WO_3$:N) films were synthesized using a reactive RF magnetron sputtering on unheated substrate and then post-annealed at different temperatures from 300 to $500^{\circ}C$ in air. The N anion narrowed optical band gap, due to its mixing effect with the O 2p valence states. Furthermore, it was found that the crystallinity of the $WO_3$:N films was significantly improved by the post-annealing at $350^{\circ}C$ and higher. As a result, the $WO_3$:N films exhibited much better photoelectrochemical performance, compared with pure $WO_3$ films post-annealed at the same temperature.

• Journal of IKEEE
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• v.23 no.2
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• pp.704-709
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• 2019

In this paper, the electrical characteristics of tunneling field effect transistor(TFET) was studied for different annealing conditions. The TFET samples annealed using hydrogen forming gas(4 %) and Deuterium($D_2$) forming gas(4 %). All the measurements were conducted in noise shielded environment. The results show that subthreshold slope(SS) decreased by 33 mV/dec after annealing process compared to before annealing. Under various temperature range, the noise is improved by average of 31.2 % for 10 atm Deuterium gas at $V_G=3V$ condition. It is also noticed that, post metal annealing with $D_2$ gas reduces the noise by average of 30.7 % at $I_D=100nA$ condition.

• Journal of the Korean Society for Heat Treatment
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• v.18 no.4
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• pp.223-228
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• 2005

Tube hydroforming provides a number of advantages over conventional stamping process, including fewer secondary operation, weight reduction, assembly simplification, adaptability to forming of complex structural components and improved structural strength and stiffness. It can produce wide range of products such as subframe, engine cradle, and exhaust manifold. In this study, the effect of the heat treatment conditions such as post seam annealing (PSA) and bright annealing (BA) on the ovality and hydro-formability of steel tubes has been investigated. Hydroformabilities have been estimated by the bulging heights obtained at various processing parameters such as internal pressure, axial feeding and heat treatment conditions. The ovality and forming height are strongly influenced by material properties after heat treatments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.460-461
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• 2009

We studied the effects of post-annealing treatment on poly(3-hexylthiophene)(P3HT, donor):[6,6]-phenyl $C_{61}$ butyric acid methyl ester(PCBM, acceptor) blend film as an active layer in the organic solar cells(OSCs). For the formation of the active layer, 3 wt.% P3HT:PCBM solution in chlorobenzene were deposited by spin-coating method. In order to optimize the performance of OSCs, the P3HT crystallization and the redistribution of PCBM cluster at P3HT:PCBM composition as a function of post-annealing condition from room temperature to $200^{\circ}C$ were measured by the Hall effect and the UV-vis Spectrophotometer. We thought that the improved efficiency in the OSCs with post-annealing treatment at $150^{\circ}C$ can be explained by the efficient separation or collection of the photogenerated excitons at donor-acceptor interface by P3HT crystallization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.611-617
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• 2006

We report the preparation of N doped, p-type ZnO films by post-annealing in $NH_3$ ambient. The properties were examined by XRD, Hall-effect measurement, PL, and SIMS. ZnO films showed better crystallinity and electron concentration of $10^{15}-10^{17}/cm^3$ with post-annealing in $NH_3$ ambient. These films were converted to p-type ZnO by activation thermal annealing process at $800^{\circ}C$ under $N_2$ ambient. The electrical properties of the p-type ZnO showed a hole concentration of $1.06\times10^{16}/cm^3$, a mobility of $15.8cm^2/V{\cdot}s$, and a resistivity of $40.18\Omega{\cdot}cm$. The N doped ZnO films showed a strong photoluminescence peak at 3.306 eV at 13 K, which is closely related to neutral acceptor bound excitons of the p-type ZnO:N. In the SIMS spectra, the incorporation of nitrogen was confirmed.

• Journal of the Korean Ceramic Society
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• v.35 no.9
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• pp.945-952
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• 1998

Ferroelectric Sr0.8Bi2.4Ta2O9 stock solutions were prepared by MOD(Metaloganic Decompostion) process. The phase transformation for the layered perovskite of the SBT thin films by changing RTA(Rapid her-mal Annealing) temperatuer from 700$^{\circ}C$to 780$^{\circ}C$ were observed using XRD and SEM. Layered perovskite phase began to appear above 740$^{\circ}C$ and then SBT thin films were annealed at 800$^{\circ}C$ for 1hr for its com-plete crystallization. The specimens showed well shaped hysteresis curves without post annealing that car-ried out after deposition of Pt top electrode. The SBT thin films showed the asymmetric ferroelectric pro-perties. It was confirmed that the properties were caused by interface effect to SBT and electrode by leak-age current density measurement and asymmetric properties reduced by post annealing. At post annealing temperature of 800$^{\circ}C$ remanant polarization values (2Pr) were 6.7 9 ${\mu}$C/cm2 and those of leakage current densities were 3.73${\times}$10-7 1.32${\times}$10-6 A/cm2 at 3, 5V respectively. Also bismuth bonding types of SBT thin film surface were observed by XPS.

• Journal of the Korean Ceramic Society
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• v.43 no.3 s.286
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• pp.185-192
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• 2006

The effects of annealing on structural and electrical properties of ITO/PES (Indium Tin Oxide/Polyethersulfone) films was investigated. Amorphous ITO thin films were grown on plastic substrates, PES using low temperature DC magnetron sputtering. Various post annealing techniques were attempted to research variations of microstructure and electrical properties: i) conventional thermal annealing, ii) excimer laser annealing, iii) UV irradiation. The electrical properties were obtained using Hall effect measurements and DC 4-point resistance measurement. The microstructural features were characterized by FESEM, XRD, Raman spectroscopy in terms of morphology and crystallinity. Optimized UV treatment exhibits the enhanced conductivity and crystallinity, compared to those of conventional thermal annealing.