• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.7-10
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• 2016

The post cleaning method for clean the shadow mask using in OLED (organic light emitting diode) emitter layer is always reforming. The cleaning solution and analysis method of shadow mask is still lack and not optimized. We use the simple and useful analytical method to determine the quantity and quality of organic and inorganic residue on surface of shadow mask. Finally analyze the cleaning solution using Raman spectroscopy efficiently.

• Electrical & Electronic Materials
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• v.12 no.10
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• pp.34-38
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• 1999

• Fashion & Textile Research Journal
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• v.13 no.6
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• pp.983-989
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• 2011

This study aimed to identify mordant effects of Chestnut hulls. The color of post and pre-mordanted fabrics were measured in terms of H, V, C, $L^*$, $a^*$, $b^*$, and K/S values. In addition, color fastness and antimicrobial activity were evaluated. The pre-mordant concentration of Chestnut hulls for cotton, mercerized cotton and silk was optimized to 50% (o.w.f.) and 70% (o.w.f.), respectively. Post-mordant concentration of Chestnut hulls of mercerized cotton, silk and cotton was optimized to 50% (o.w.f.) and 90% (o.w.f.), respectively. The hue of fabrics was influenced by mordant methods, such as pre-mordant and post-mordant, slightly. Wet cleaning fastness of pre-mordanted cotton and mercerized cotton fabrics was higher than that of post-mordanted fabrics. The wet cleaning fastness of silk fabrics was not affected by the mordant method, and their fastness were proved to be excellent. The dry cleaning fastness of post-mordanted cotton fabrics was higher than that of pre-mordanted cotton fabrics. The dry cleaning fastness of mercerized cotton and silk was proved to be excellent regardless of mordant methods. The antimicrobial activity of Oenothera odorata jacquin dyed fabrics and Chestnut hulls mordanted fabrics was proved to 99.9%, and their excellent antimicrobial activity remained after wet and dry cleaning.

• Korean Journal of Materials Research
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• v.19 no.3
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• pp.174-178
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• 2009

The effects of post-CMP cleaning on the chemical and galvanic corrosion of copper (Cu) and titanium (Ti) were studied in patterned silicon (Si) wafers. First, variation of the corrosion rate was investigated as a function of the concentration of citric acid that was included in both the CMP slurry and the post-CMP solution. The open circuit potential (OCP) of Cu decreased as the citric acid concentration increased. In contrast with Cu, the OCP of titanium (Ti) increased as this concentration increased. The gap in the OCP between Cu and Ti increased as citric acid concentration increased, which increased the galvanic corrosion rate between Cu and Ti. The corrosion rates of Cu showed a linear relationship with the concentrations of citric acid. Second, the effect of Triton X-$100^{(R)}$, a nonionic surfactant, in a post-CMP solution on the electrochemical characteristics of the specimens was also investigated. The OCP of Cu decreased as the surfactant concentration increased. In contrast with Cu, the OCP of Ti increased greatly as this concentration increased. Given that Triton X-$100^{(R)}$ changes its micelle structure according to its concentration in the solution, the corrosion rate of each concentration was tested.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.364-365
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• 2006

Transverse some wave was generated by T type waveguide for single wafer cleaning application T type megasonic waveguide was analyzed by acoustic pressure measurements and particle removal efficiency. Compared to conventional longitudinal waves, not like longitudinal waves, transverse waves showed changes of direction and phase which increased the cleaning efficiency.

• Journal of the Korean Society of Clothing and Textiles
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• v.35 no.2
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• pp.181-191
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• 2011

This study examines the effects of Evening primrose on colors, color fastness, and the antimicrobial activity of dyed fabrics. The results are as follows. The dyeing conditions of Evening primrose on cotton and mercerized cotton were optimized at $50^{\circ}C$, 60 minutes, and 200% (o.w.f.). In addition, Evening primrose dyeing on silk was determined at $90^{\circ}C$, 60 minutes and 200% (o.w.f.). The pre-mordant concentration of chemicals of cotton, mercerized cotton and silk was optimized at 1% (o.w.f.). The post-mordant concentration on mercerized cotton, silk and cotton was determined at 1% (o.w.f.) and 3% (o.w.f.), respectively. The mordant methods (such as pre-mordant and post-mordant) were slightly affected on the hue of dye-fabrics. Wet cleaning fastness of cotton was improved by post-mordant; otherwise, the wet cleaning fastness of mercerized cotton and silk was improved by a pre-mordant. The dry cleaning fastness of cotton and silk was excellent regardless of mordant methods. The dry cleaning fastness of mercerized cotton was improved by a post-mordant compared to a pre-mordant. The antimicrobial activity of Evening primrose-dyed fabrics was shown at 99.9%. The excellent antimicrobial activity of dyed fabrics remained after the mordant as well as wet and dry cleaning.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.529-529
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• 2007

Ruthenium (Ru) is a white metal and belongs to platinum group which is very stable chemically and has a high work function. It has been widely studied to apply Ru as an electrode material in memory devices and a Cu diffusion barrier metal for Cu interconnection due to good electrical conductivity and adhesion property to Cu layer. To planarize deposited Ru layer, chemical mechanical planarization(CMP) was suggested. However, abrasive particle can induce particle contamination on the Ru layer surface during CMP process. In this study, zeta potentials of Ru and interaction force of alumina particles with Ru substrate were measured as a function of pH. The etch rate and oxidation behavior were measured as a function of chemical concentration of several organic acids and other acidic and alkaline chemicals. PRE (particle removal efficiency) was also evaluated in cleaning chemical.

• Corrosion Science and Technology
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• v.9 no.6
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• pp.276-280
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• 2010

Copper(Cu) as an interconnecting metal layer can replace aluminum (Al) in IC fabrication since Cu has low electrical resistivity, showing high immunity to electromigration compared to Al. However, it is very difficult for copper to be patterned by the dry etching processes. The chemical mechanical polishing (CMP) process has been introduced and widely used as the mainstream patterning technique for Cu in the fabrication of deep submicron integrated circuits in light of its capability to reduce surface roughness. But this process leaves a large amount of residues on the wafer surface, which must be removed by the post-CMP cleaning processes. Copper corrosion is one of the critical issues for the copper metallization process. Thus, in order to understand the copper corrosion problems in post-CMP cleaning solutions and study the effects of DC biases and post-CMP cleaning solution concentrations on the Cu film, a constant voltage was supplied at various concentrations, and then the output currents were measured and recorded with time. Most of the cases, the current was steadily decreased (i.e. resistance was increased by the oxidation). In the lowest concentration case only, the current was steadily increased with the scarce fluctuations. The higher the constant supplied DC voltage values, the higher the initial output current and the saturated current values. However the time to be taken for it to be saturated was almost the same for all the DC supplied voltage values. It was indicated that the oxide formation was not dependent on the supplied voltage values and 1 V was more than enough to form the oxide. With applied voltages lower than 3 V combined with any concentration, the perforation through the oxide film rarely took place due to the insufficient driving force (voltage) and the copper oxidation ceased. However, with the voltage higher than 3 V, the copper ions were started to diffuse out through the oxide film and thus made pores to be formed on the oxide surface, causing the current to increase and a part of the exposed copper film inside the pores gets back to be oxidized and the rest of it was remained without any further oxidation, causing the current back to decrease a little bit. With increasing the applied DC bias value, the shorter time to be taken for copper ions to be diffused out through the copper oxide film. From the discussions above, it could be concluded that the oxide film was formed and grown by the copper ion diffusion first and then the reaction with any oxidant in the post-CMP cleaning solution.

• Korean Chemical Engineering Research
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• v.59 no.4
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• pp.632-638
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• 2021

With the copper interconnection in the semiconductor process, complex residues including copper oxide, fluoride, and polymeric fluorocarbon are formed by plasma etching. In this study, a cleaning solution was prepared with a component having an amine group (-NH₂) and a carboxyl group (-COOH), and the characteristics of removing post-etch residues in the copper wiring process were analyzed. In the cleaning solution containing an amine group, the length of the component substituted with nitrogen and the length of the carbon chain influenced the cleaning effect, and the etching rate of copper oxide increased as the pH of the cleaning solution increased. The activity of the amine group is in the basic region, and the activity of the carboxyl group is in the acidic region, and the cleaning process proceeds through complex formation with copper or copper oxide in each region.

• Electrical & Electronic Materials
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• v.12 no.10
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• pp.29-33
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• 1999