• 제목/요약/키워드: Porous substrates

검색결과 140건 처리시간 0.03초

결정질 실리콘 태양전지의 광학적 손실 감소를 위한 표면구조 개선에 관한 연구 (Investigation of the surface structure improvement to reduce the optical losses of crystalline silicon solar cells)

  • 이은주;이수홍
    • 신재생에너지
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    • 제2권2호
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    • pp.4-8
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    • 2006
  • Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layer were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The surface morphology of porous Si layers were investigated using SEM. The formation of a porous Si layer about $0.1{\mu}m$ thick on the textured silicon wafer result in an effective reflectance coefficient Reff lower than 5% in the wavelength region from 400 to 1000nm. Such a surface modification allows improving the Si solar cell characteristics.

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Porous Si Layer by Electrochemical Etching for Si Solar Cell

  • Lee, Soo-Hong
    • 한국전기전자재료학회논문지
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    • 제22권7호
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    • pp.616-621
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    • 2009
  • Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating(ARC) and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si ARC layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layers were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The structure of porous Si layers was investigated with SEM. The formation of a nanoporous Si layer about 100nm thick on the textured silicon wafer result in a reflectance lower than 5% in the wavelength region from 500 to 900nm. Such a surface modification allows improving the Si solar cell characteristics. An efficiency of 13.4% is achieved on a monocrystalline silicon solar cell using the electrochemical technique.

다공성 실리콘 막을 적용한 결정질 실리콘 태양전지 특성 연구 (Investigation of the crystalline silicon solar cells with porous silicon layer)

  • 이은주;이일형;이수홍
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2007년도 춘계학술대회
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    • pp.295-298
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    • 2007
  • Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating(ARC) and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si ARC layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layers were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The structure of porous Si layers was investigated with SEM. The formation of a nanoporous Si layer about 100nm thick on the textured silicon wafer result in a reflectance lower than 5% in the wavelength region from 500 to 900nm. Such a surface modification allows improving the Si solar cell characteristics. An efficiency of 13.4% is achieved on a monocrystalline silicon solar cell using the electrochemical technique.

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Nano-porous Silicon Microcavity Sensors for Determination of Organic Fuel Mixtures

  • Pham, Van Hoi;Bui, Huy;Hoang, Le Ha;Nguyen, Thuy Van;Nguyen, The Anh;Pham, Thanh Son;Ngo, Quang Minh
    • Journal of the Optical Society of Korea
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    • 제17권5호
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    • pp.423-427
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    • 2013
  • We present the preparation and characteristics of liquid-phase sensors based on nano-porous silicon multilayer structures for determination of organic content in gasoline. The principle of the sensor is a determination of the cavity-resonant wavelength shift caused by refractive index change of the nano-porous silicon multilayer cavity due to the interaction with liquids. We use the transfer matrix method (TMM) for the design and prediction of characteristics of microcavity sensors based on nano-porous silicon multilayer structures. The preparation process of the nano-porous silicon microcavity is based on electrochemical etching of single-crystal silicon substrates, which can exactly control the porosity and thickness of the porous silicon layers. The basic characteristics of sensors obtained by experimental measurements of the different liquids with known refractive indices are in good agreement with simulation calculations. The reversibility of liquid-phase sensors is confirmed by fast complete evaporation of organic solvents using a low vacuum pump. The nano-porous silicon microcavity sensors can be used to determine different kinds of organic fuel mixtures such as bio-fuel (E5), A92 added ethanol and methanol of different concentrations up to 15%.

결정질 실리콘 태양전지의 광학적 손실 감소를 위한 표면구조 개선에 관한 연구 (Investigation of the surface structure improvement to reduce the optical losses of crystalline silicon solar cells)

  • 이은주;이수홍
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2006년도 춘계학술대회
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    • pp.183-186
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    • 2006
  • Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layer were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The surface morphology of porous Si layers were investigated using SEM. The formation of a porous Si layer about $0.1{\mu}m$ thick on the textured silicon wafer result in an effective reflectance coefficient $R_{eff}$ lower than 5% in the wavelength region from 400 to 1000nm. Such a surface modification allows improving the Si solar cell characteristics.

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방사선을 이용한 강화 복합 연료전지막 다공성 지지체용 PTFE-g-PAA 제조 및 특성 연구 (Radiolytic Fabrication and Characterization of PTFE-g-PAA as the Supporters for the Reinforced Composite Fuel Cell Membrane)

  • 손준용;박병희;송주명;이영무;신준화
    • 폴리머
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    • 제37권5호
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    • pp.649-655
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    • 2013
  • 방사선 그래프팅 방법을 이용하여 다공성 PTFE 지지체에 친수성 고분자 사슬인 아크릴산 사슬을 도입시켜 강화 복합 연료전지막의 지지체로 사용하기 위한 PTFE 친수화 다공성 지지체를 제조하였고 FTIR을 이용하여 다공성 PTFE에 친수성 고분자가 성공적으로 도입되었음을 확인하였다. 제조된 지지체의 표면 친수화 정도를 관찰하기 위해 접촉각을 측정한 결과, 도입된 친수성 고분자 사슬이 증가할수록 소수성의 PTFE 표면 친수화도가 증가됨을 확인하였다. 또한 제조된 지지체의 물리화학적, 형태학적 특성은 FE-SEM, gurley number, 인장강도를 측정하여 관찰하였다.

다공성 실리콘의 제조서 전기화학적 특성 (Electrochemical Characteristics on the Preparation of Porous Silicon)

  • 김동일;이창형;정두환;김창수;신동열;이치우
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 D
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    • pp.1768-1770
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    • 1999
  • Porous silicon were prepared under various anodization condition on n-Si substrates. Chronoamperometric curves of porous silicon depended on potentials, composition and temperature of electrolytes. and intensity of UV irradiation. Anodic current density decreased continuously at low potential $(\leq0.5V)$ but increased at high potentials (>2V vs. Ag QRE). the difference in chronoamperometric curve is due to different activation energy in the processes involved in porous silicon formation.

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흑연분말을 이용한 다공성 니켈지지체의 제조에 관한 연구 (A Study on the Fabrication of Porous Nickel Substrates Using Graphite Powder)

  • 박성용;백지흠;조원일;조병원;윤경석
    • 한국표면공학회지
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    • 제28권5호
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    • pp.276-288
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    • 1995
  • A nickel mesh and an expanded nickel sheet were used as a current collector for supporting active materials of cathode in rechargeable batteries, while a porous nickel substrate was extensively studied because of its 3-dimensional structure which has high capabilities for active materials and current collection. Optimum coating conditions were studied by SEM and two step d. c. constant current electrolysis for the graphite coating and electro-plated nickel on an urethane substance which was highly porous and 3-dimensional structure. The density and the porosity of nickel support obtained by using two step current density and 80 ppi urethane substance were 0.38∼0.40 g /㎤ and 94∼96%, respectively. It was possible to fabricate a highly porous and good packable nickel substrate using two step current density and surfactants at sulfamic acid nickel plating bath.

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다공성실리콘 위의 탄화규소 박막의 증착 및 발광특성 (Deposition and Photoluminescence Characteristics of Silicon Carbide Thin Films on Porous Silicon)

  • 전희준;최두진;장수경;심은덕
    • 한국세라믹학회지
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    • 제35권5호
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    • pp.486-492
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    • 1998
  • Silicon carbide (SiC) thin films were deposited on the porous silicon substrates by chemical vapour de-position(CVD) using MTS as a source material. The deposited films were ${\beta}$-SiC with poor crystallity con-firmed by XRD measurement. It was considered that the films showed the mixed characteistics of cry-stalline and amorphous SiC where amorphous SiC where amorphous SiC played a role of buffer layer in interface between as-dep films and Si substrate. The buffer layer reduced lattice mismatch to some extent the generally occurs when SiC films are deposited on Si. The low temperature (10K) PL (phtoluminescence) studies showed two broad bands with peaks at 600 and 720 for the films deposited at 1100$^{\circ}C$ The maximum PL peak of the crystalline SiC was observed at 600 nm and the amrophous SiC of 720 nm was also confirmed. PL peak due the amorphous SiC was smaller than that of the crystalline SiC, PL of porous Si might be disapperared due to densification during heat treatment.

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열화학기상증착법에 의한 대면적 실리콘 기판위에서의 탄소나노튜브 성장 (Growth of carbon nanotubes on a large area of Si substrate by the thermal chemical vapor deposition)

  • 김대운;이철진;이태재;박정훈;손권희;강현근;송홍기;최영철;박영수
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1999년도 하계종합학술대회 논문집
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    • pp.954-957
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    • 1999
  • We have synthesized carbon nanotubes by thermal chemical vapor deposition of $C_2$H$_2$ on transition metal-coated silicon substrates. Carbon nanotubes are uniformly synthesized on a large area of the plain Si substrates, different from previously reported porous Si substrates. It is observed that surface modification of transition metals deposited on substrates by either etching with dipping in a HF solution and/or NH$_3$ pretreatment is a crucial step for the nanotube growth prior to the reaction of $C_2$H$_2$gas. We will demonstrate that the diameters of carbon naotubes can be controlled by applying the different transition metals.

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