• 한국입자에어로졸학회지
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• 제8권4호
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• pp.173-180
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• 2012

SiC particles, 8.3 ${\mu}m$ in volume average diameter, were chlorinated in an alumina tubular reactor, 2.4 cm in diameter and 32 cm in length, with reactor temperature varied from 100 to $1200^{\circ}C$. The flow rate of the gas admitted to the reactor was held constant at 300 cc/min, the mole fraction of chlorine in the gas at 0.1 and the reaction time at 4 h. The chlorination was negligibly small up to the temperature of $500^{\circ}C$. Thereafter, the degree of chlorination increased remarkably with increasing temperature until $900^{\circ}C$. As the temperature was increased further from 900 to $1200^{\circ}C$, the increments in chlorination degree were rather small. At $1200^{\circ}C$, the chlorination has nearly been completed. The surface area of the residual carbon varied with chlorination temperature in a manner similar to that with the variation of chlorination degree with temperature. The surface area at $1200^{\circ}C$ was 912 $m^{2}/g$. A simple model was developed to predict the conversion of a SiC under various conditions. A Langmuir-Hinshelwood type rate law with two rate constants was employed in the model. Assuming that the two rate constants, $k_{1}$ and $k_{2}$, can be expressed as $A_{1e}^{-E_{1}/RT}$ and $A_{2e}^{-E_{2}/RT}$, the four parameters, $A_{1}$, $E_{1}$, $A_{2}$, and $E_{2}$ were determined to be 32.0 m/min, 103,071 J/mol, 2.24 $m^{3}/mol$ and 39,526 J/mol, respectively, through regression to best fit experimental data.

• 한국재료학회지
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• 제20권4호
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• pp.217-222
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• 2010

Zirconium diboride (ZrB2) and mixed diboride of (Zr0.7Ta0.3)B2 containing 30 vol.% silicon carbide (SiC) composites were prepared by hot-pressing at $1800^{\circ}C$. XRD analysis identified the high crystalline metal diboride-SiC composites at $1800^{\circ}C$. The TaB2 addition to ZrB2-SiC showed a slight peak shift to a higher angle of 2-theta of ZrB2, which confirmed the presence of a homogeneous solid solution. Elastic modulus, hardness and fracture toughness were slightly increased by addition of TaB2. A volatility diagram was calculated to understand the oxidation behavior. Oxidation behavior was investigated at $1500^{\circ}C$ under ambient and low oxygen partial pressure (pO2~10-8 Pa). In an ambient environment, the TaB2 addition to the ZrB2-SiC improved the oxidation resistance over entire range of evaluated temperatures by formation of a less porous oxide layer beneath the surface SiO2. Exposure of metal boride-SiC at low pO2 resulted in active oxidation of SiC due to the high vapor pressure of SiO (g), and, as a result, it produced a porous surface layer. The depth variations of the oxidized layer were measured by SEM. In the ZrB2-SiC composite, the thickness of the reaction layer linearly increased as a function of time and showed active oxidation kinetics. The TaB2 addition to the ZrB2-SiC composite showed improved oxidation resistance with slight deviation from the linearity in depth variation.

• 한국세라믹학회지
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• 제50권4호
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• pp.301-307
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• 2013

SiC hollow fiber was fabricated by curing, dissolution and sintering of Al-PCS fiber, which was melt spun the polyaluminocarbosilane. Al-PCS fiber was thermally oxidized and dissolved in toluene to remove the unoxidized area, the core of the cured fiber. The wall thickness ($t_{wall}$) of Al-PCS fiber was monotonically increased with an increasing oxidation curing time. The Al-PCS hollow fiber was heat-treated at the temperature between 1200 and $2000^{\circ}C$ to make a SiC hollow fibers having porous structure on the fiber wall. The pore size of the fiber wall was increased with the sintering temperature due to the decomposition of the amorphous $SiC_xO_y$ matrix and the growth of ${\beta}$-SiC in the matrix. At $1400^{\circ}C$, a nano porous wall with a high specific surface area was obtained. However, nano pores grew with the grain growth after the thermal decomposition of the amorphous matrix. This type of SiC hollow fibers are expected to be used as a substrate for a gas separation membrane.

• 자원리싸이클링
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• 제19권5호
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• pp.31-43
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• 2010

석탄가스화 복합발전 시스템의 집진설비용 다공성 탄화수소 캔들 필터 제조를 위해 래밍성형과 진공 압출성형 공정에 외해 캔들필터 성형체를 제조하였다. 다양한 입도를 갖는 탄화규소 분말을 출발원료로 하였으며, 비점토계 무기 소결조제로 뮬라이트와 칼슘 카보네이트 분말을 사용하였다. 래밍성형과 진공 압출성형에 의한 캔들 필터 성형체들은 대기 분위기 $1400^{\circ}C$에서 2시간 소성하여 제조하였다. 캔들 필터 성형공정과 출발원료 입도가 소결된 다공성 캔들 필터 지지층의 기공율, 밀도, 강도 (굽힘강도, 압축강도)와 미세구조에 미치는 영향을 조사하였다. 래밍성형 공정에 외한 제조원 다공성 탄화규소 캔들 필터 소결체가 압출성형된 필터에 비해 높은 밀도 및 강도를 나타내고 있었으며, 그 최고 값은 각각 $2.0\;g/cm^3$과 45 MPa이었다. 한편 캔들 필터 지지층의 장기 내식성 평가 예측을 위하여 소결된 시편에 대해 석탄가스화 복합발전 $600^{\circ}C$의 모사 합성가스 분위기에서 2400시간 부식실험을 수행하였다.

• 한국세라믹학회지
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• 제45권9호
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• pp.561-566
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• 2008

Carbon fiber fabric-silicon carbide composites were fabricated by liquid silicon infiltration (LSI) process. The porous two-dimensional carbon fiber fabric performs were prepared by 13 plies of 2D-plain-weave fabric in a three laminating method, [0/90], [${\pm}45$], [$0/90/{\pm}45$] lay-up, respectively. Before laminating, a thin pyrolytic carbon (PyC) layer deposited on the surface of 2D-plain weave fabric sheets as interfacial layer with $C_3H_8$ and $N_2$ gas at $900^{\circ}C$. A densification of the preforms for $C_f-Si-SiC$ matrix composite was achieved according to the LSI process at $1650^{\circ}C$ for 30 min. in vacuum atmosphere. The bending strength of the each composite were measured and the microstructural consideration was performed by a FE-SEM.

• 한국산학기술학회논문지
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• 제20권3호
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• pp.29-34
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• 2019

SiC는 큰 에너지 밴드 갭을 갖고, 불순물 도핑에 의해 p형 및 n형 전도의 제어가 용이해서 고온용 전자부품 소재로 활용이 가능한 재료이다. 특히 $N_2$ 분위기, $2000^{\circ}C$에서 ${\beta}-SiC$ 분말로부터 제조한 다공질 n형 SiC 반도체의 경우, $800{\sim}1000^{\circ}C$에서의 도전율 값이 단결정 SiC와 비교해서 비슷하거나 오히려 높은 값을 나타내었으며, 반면에 열전도율은 치밀한 SiC 세라믹스와 비교시 1/10~1/30 정도로 낮은 값을 나타내었다. 본 연구에서는 소결온도를 낮추기 위해 n형 ${\beta}-SiC$에 함침 시킨 polycarbosilane (PCS)의 열분해에 의한 반응소결 공정 ($1400{\sim}1600^{\circ}C$)으로 다공질 소결체를 제작하였다. 함침 및 소결공정($N_2$ 분위기, $1600^{\circ}C$, 3시간)을 반복함에 따라 상대밀도는 크게 증가하지 않았지만 Seebeck 계수 및 도전율은 크게 증가하였다. 본 연구에서의 열전변환 효율을 반영하는 power factor는 고온에서 상압소결 공정으로 제작한 다공질 SiC 반도체에 비해 1/100~1/10 정도 작게 나타났지만, 미세구조 및 캐리어 밀도를 정밀하게 제어하면, 본 연구에서의 반응소결 공정으로 제작한 SiC 반도체의 열전물성은 크게 향상될 것으로 판단된다.

• 한국전기전자재료학회논문지
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• 제32권2호
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• pp.100-103
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• 2019

The change in vanadium amount according to the growth direction of vanadium-doped semi-insulated (SI) SiC single crystals using high-purity SiC powder was investigated. High-purity SiC powder and a porous graphite (PG) inner crucible were placed on opposite sides of SiC seed crystals. SI SiC crystals were grown on 2 inch 6H-SiC Si-face seeds at a temperature of $2,300^{\circ}C$ and growth pressure of 10~30 mbar of argon atmosphere, using the physical vapor transport (PVT) method. The sliced SiC single crystals were polished using diamond slurry. We analyzed the polytype and quality of the SiC crystals using high-resolution X-ray diffraction (XRD) and Raman spectroscopy. The resistivity of the SI SiC crystals was analyzed using contactless resistivity mapping (COREMA) measurements.

• 한국산학기술학회논문지
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• 제21권4호
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• pp.596-601
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• 2020

SiC는 큰 밴드 갭 에너지를 갖고, 불순물 도핑에 의해 p형 및 n형 전도의 제어가 용이해서 고온용 전자부품소재로 활용이 가능한 재료이다. 따라서 국내 부존 규조토의 고부가가치 활용을 위해 정제 규조토로부터 합성한 β-SiC 분말의 열전물성에 대해 조사하였다. 정제한 규조토 중의 SiO₂ 성분을 카본블랙으로 환원 탄화 반응시켜 β-SiC 분말을 합성하고, 잔존하는 불순물(Fe, Ca 등)을 제거하기 위해서 산처리 공정을 행하였다. 분말의 성형체를 질소 분위기 2000℃에서 1~5시간 소결시켜 n형 SiC 반도체를 제작하였다. 소결시간이 길어짐에 따라 캐리어 농도의 증가 및 입자간의 연결성 향상에 의해 도전율이 향상되었다. 합성 및 산처리한 β-SiC 분말에 내재하는 억셉터형 불순물(Al 등)로 인한 캐리어 보상효과가 도전율 향상에 저해하는 요인으로 나타났다. 소결시간이 증가함에 따라 입자 및 결정 성장과 함께 적층 결함 밀도의 감소에 의해 Seebeck 계수의 절대값이 증가하였다. 본 연구에서의 열전 변환 효율을 반영하는 power factor는 상용 고순도 β-SiC 분말로 제작한 다공질 SiC 반도체에 비해 다소 작게 나타났지만, 산처리 공정을 정밀하게 제어하면 열전물성은 보다 향상될 것으로 판단된다.

• The Journal of Advanced Prosthodontics
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• 제8권1호
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• pp.1-8
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• 2016

PURPOSE. The purpose of this study was to evaluate the efficacy of two different metal conditioners for non-precious metal alloys for the bonding of porcelain to a cobalt-chromium (Co-Cr) alloy. MATERIALS AND METHODS. Disk-shaped specimens ($2.5{\times}10.0mm$) were cast with Co-Cr alloy and used as adherend materials. The bonding surfaces were polished with a 600-grid silicon carbide paper and airborne-particle abraded using $110{\mu}m$ alumina particles. Bonding specimens were fabricated by applying and firing either of the metal conditioners on the airborne-particle abraded surface, followed by firing porcelain into 5 mm in diameter and 3 mm in height. Specimens without metal conditioner were also fabricated. Shear bond strength for each group (n=8) were measured and compared (${\alpha}=.05$). Sectional view of bonding interface was observed by SEM. EDS analysis was performed to determine the chemical elements of metal conditioners and to determine the failure modes after shear test. RESULTS. There were significant differences among three groups, and two metal conditioner-applied groups showed significantly higher values compared to the non-metal conditioner group. The SEM observation of the sectional view at bonding interface revealed loose contact at porcelain-alloy surface for non-metal conditioner group, however, close contact at both alloy-metal conditioner and metal conditioner-porcelain interfaces for both metal conditioner-applied groups. All the specimens showed mixed failures. EDS analysis showed that one metal conditioner was Si-based material, and another was Ti-based material. Si-based metal conditioner showed higher bond strengths compared to the Ti-based metal conditioner, but exhibited more porous failure surface failure. CONCLUSION. Based on the results of this study, it can be stated that the application of metal conditioner is recommended for the bonding of porcelain to cobalt-chromium alloys.