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http://dx.doi.org/10.4313/JKEM.2019.32.2.100

Semi-Insulating SiC Single Crystals Grown with Purity Levels in SiC Source Materials  

Lee, Chae Young (Department of Advanced Materials Engineering, Dong-Eui University)
Choi, Jeong Min (Department of Advanced Materials Engineering, Dong-Eui University)
Kim, Dae Sung (Department of Advanced Materials Engineering, Dong-Eui University)
Park, Mi Seon (Department of Advanced Materials Engineering, Dong-Eui University)
Jang, Yeon Suk (Department of Advanced Materials Engineering, Dong-Eui University)
Lee, Won Jae (Department of Advanced Materials Engineering, Dong-Eui University)
Yang, In Seok (STC)
Kim, Tae Hee (STC)
Chen, Xiufang (State Key Laboratory of Crystal Materials, Shandong University)
Xu, Xiangang (State Key Laboratory of Crystal Materials, Shandong University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.32, no.2, 2019 , pp. 100-103 More about this Journal
Abstract
The change in vanadium amount according to the growth direction of vanadium-doped semi-insulated (SI) SiC single crystals using high-purity SiC powder was investigated. High-purity SiC powder and a porous graphite (PG) inner crucible were placed on opposite sides of SiC seed crystals. SI SiC crystals were grown on 2 inch 6H-SiC Si-face seeds at a temperature of $2,300^{\circ}C$ and growth pressure of 10~30 mbar of argon atmosphere, using the physical vapor transport (PVT) method. The sliced SiC single crystals were polished using diamond slurry. We analyzed the polytype and quality of the SiC crystals using high-resolution X-ray diffraction (XRD) and Raman spectroscopy. The resistivity of the SI SiC crystals was analyzed using contactless resistivity mapping (COREMA) measurements.
Keywords
Silicon carbide; Semi-insulating; Vanadium; High purity powder;
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