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http://dx.doi.org/10.4191/kcers.2013.50.4.301

Nano-Structure Control of SiC Hollow Fiber Prepared from Polycarbosilane  

Shin, Dong-Geun (Korea Institute of Ceramic Engineering and Technology)
Kong, Eun-Bae (Korea Institute of Ceramic Engineering and Technology)
Cho, Kwang-Youn (Korea Institute of Ceramic Engineering and Technology)
Kwon, Woo-Tek (Korea Institute of Ceramic Engineering and Technology)
Kim, Younghee (Korea Institute of Ceramic Engineering and Technology)
Kim, Soo-Ryong (Korea Institute of Ceramic Engineering and Technology)
Hong, Jun-Sung (Department of Materials Science and Engineering, Seoul National University of Technology)
Riu, Doh-Hyung (Department of Materials Science and Engineering, Seoul National University of Technology)
Publication Information
Abstract
SiC hollow fiber was fabricated by curing, dissolution and sintering of Al-PCS fiber, which was melt spun the polyaluminocarbosilane. Al-PCS fiber was thermally oxidized and dissolved in toluene to remove the unoxidized area, the core of the cured fiber. The wall thickness ($t_{wall}$) of Al-PCS fiber was monotonically increased with an increasing oxidation curing time. The Al-PCS hollow fiber was heat-treated at the temperature between 1200 and $2000^{\circ}C$ to make a SiC hollow fibers having porous structure on the fiber wall. The pore size of the fiber wall was increased with the sintering temperature due to the decomposition of the amorphous $SiC_xO_y$ matrix and the growth of ${\beta}$-SiC in the matrix. At $1400^{\circ}C$, a nano porous wall with a high specific surface area was obtained. However, nano pores grew with the grain growth after the thermal decomposition of the amorphous matrix. This type of SiC hollow fibers are expected to be used as a substrate for a gas separation membrane.
Keywords
Membrane; Hollow fiber; Silicon carbide; Polyaluminocarbosilane;
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Times Cited By KSCI : 2  (Citation Analysis)
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