• 한국세라믹학회지
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• 제51권6호
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• pp.539-543
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• 2014

Foam type porous silicon carbide ceramics were fabricated by a polymer replica method using polyurethane foam, carbon black, phenol resin, and silicon powder as raw materials. The influence of the C/Si mole ratio of the ceramic slurry and heat treatment temperature on the porous silicon carbide microstructure was investigated. To characterize the microstructure of porous silicon carbide ceramics, BET, bulk density, X-ray Powder Diffraction (XRD), and Scanning Electron Microscope (SEM) analyses were employed. The results revealed that the surface area of the porous silicon carbide ceramics decreases with increased heat treatment temperature and carbon content at the $2^{nd}$ heat treatment stage. The addition of carbon to the ceramic slurry, which was composed of phenol resin and silicon powder, enhanced the direct carbonization reaction of silicon. This is ascribed to a consequent decrease of the wetting angles of carbon to silicon with increasing heat treatment temperature.

• Journal of Photoscience
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• 제12권3호
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• pp.171-174
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• 2005

The relationship between porous surfaces and photoluminescence (PL) behavior of porous silicon carbide (PSC) in various solvents has been studied. The porous surfaces of p-type silicon carbide can be fabricated by electrochemical anodization from the 6H, 15R, 4H-${\alpha}$-SiC substrates in dark-current mode (DCM) condition. We have been investigated the dependence of the PL spectra of PSC under the medium having the different dielectric constants. It has been found that PL depends sensitively on the environment surrounding the surface. The extent of chemically stability on the surface of PSC due to the various solvents was confirmed by reflectance Fourier transform infrared (FTIR) spectroscopy. Detailed IR experiments on the PSC samples were carried out before and after various solvents immersion. These results will be offered important information on the origin of PL in porous structure.

• 한국세라믹학회지
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• 제27권2호
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• pp.179-186
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• 1990

Silicon carbide porous materials used for hot gas filters were prepared using oxide binder. Chamotte, frit and H3PO4 were starting materials to synthesize the oxide binder for high temperature-use. Room temperature bending strength of the silicon carbide porous body was increased with increasing firing temprature or with the amount of the content of frit in the oxide binder. However, in the oxidebinder fired above132$0^{\circ}C$, cristobalite form of AlPO4 phase which undergoes rapid inversion became more prominent with increasing firing time. the average pore size of the silicon carbide filter materials was found to be about one third of the average grain size of the silicon carbide powder used in this study.

• 한국세라믹학회지
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• 제35권5호
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• pp.486-492
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• 1998

Silicon carbide (SiC) thin films were deposited on the porous silicon substrates by chemical vapour de-position(CVD) using MTS as a source material. The deposited films were ${\beta}$-SiC with poor crystallity con-firmed by XRD measurement. It was considered that the films showed the mixed characteistics of cry-stalline and amorphous SiC where amorphous SiC where amorphous SiC played a role of buffer layer in interface between as-dep films and Si substrate. The buffer layer reduced lattice mismatch to some extent the generally occurs when SiC films are deposited on Si. The low temperature (10K) PL (phtoluminescence) studies showed two broad bands with peaks at 600 and 720 for the films deposited at 1100$^{\circ}C$ The maximum PL peak of the crystalline SiC was observed at 600 nm and the amrophous SiC of 720 nm was also confirmed. PL peak due the amorphous SiC was smaller than that of the crystalline SiC, PL of porous Si might be disapperared due to densification during heat treatment.

• 한국세라믹학회지
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• 제50권6호
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• pp.429-433
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• 2013

Silicon, carbon, and B4C powders were used as raw materials for the fabrication of porous SiC. ${\beta}$-SiC was synthesized at $1500^{\circ}C$ in an Ar atmosphere from a silicon and carbon mixture. The synthesized powders were pressed into disk shapes and then heated at $2100^{\circ}C$. ${\beta}$-SiC particles transformed to ${\alpha}$-SiC at over $1900^{\circ}C$, and rapid grain growth of ${\alpha}$-SiC subsequently occurred and a porous structure with elongated plate-type grains was formed. The mechanism of this rapid grain growth is thought to be an evaporation-condensation reaction. The mechanical properties of the fabricated porous SiC were investigated and discussed.

• The Korean Journal of Ceramics
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• 제4권3호
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• pp.245-248
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• 1998

Porous carbon fiber composites (CFCs) having variable specific surface area ranging 35~1150 $\m^2$/g were reacted to produce silicon carbide fiber composites with SiO vapor generated from a mixture of Si and $SiO_2$ at 1673 K for 2 h under vacuum. Part of SiO vapor generated during conversion process condensed on to the converted fiber surface as amorphous silica. Chemical analysis of the converted CFCs resulting from reaction showed that the products contained 27~90% silicon carbide, 7~18% amorphous silica and 3~63% unreacted carbon, and the composition depended on the specific carbide, 7~18% amorphous silica and 3~63% unreacted carbon, and the composition depended on the specific surface area of CFCs. CFC of higher specific surface area yielded higher degree of conversion of carbon to silicon and conversion products of lower mechanical strength due to occurrence of cracks in the converted caron fiber. As the conversion of carbon to silicon carbide proceeded, pore size of converted CFCs increased as a result of growth of silicon carbide crystallites, which is also linked to the crack formation in the converted fiber.

• Journal of Photoscience
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• 제6권4호
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• pp.183-186
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• 1999

We have been prepared the porous silicon carbide (PSC) by electrochemical etching of silicon carbide single crystals. Samples of PSC have been studied by the methods of scanning electron microscope (SEM) and photoluminescence (PL). Two PL bands attributed to the blue and green light emission were observed in this study. According to the anodization conditions, the main source of emission in the oxidized layers of PSC lies in the different surface defect centers which consist of different geometrical structures due to the polytypes. It means that origin of these PL bands may be existed in different size pores simultaneously. The present results indicate that the high energy band comes from the top porous layers while the low energy band comes from the lower porous layers.

• 한국세라믹학회지
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• 제45권7호
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• pp.430-437
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• 2008

Porous self-bonded silicon carbide (SBSC) ceramics were fabricated at temperatures ranging from 1700 to $1850^{\circ}C$ using SiC, silicon (Si), and three different carbon (C) sources, including carbon black, phenol resin, and xylene. The effects of the Si:C ratio and carbon source on porosity and strength were investigated as a function of sintering temperature. Porous SBSC ceramics fabricated from phenol resin showed higher porosity than the others. In contrast, porous SBSC ceramics fabricated from carbon black showed better strength than the others. Regardless of the carbon source, the porosity increased with decreasing the Si:C ratio whereas the strength increased with increasing the Si:C ratio.

• The Korean Journal of Ceramics
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• 제3권4호
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• pp.229-234
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• 1997

Silicon carbide-carbon fiber composites have been prepared by partially Infiltrating porous carbon fiber composites with liquid silicon at a reaction temperature of $1670^{\circ}C$. Reaction between molten silicon and the fiber preform yielded silicon carbide-carbon fiber composites composed of aggregates of loosely bonded SiC crystallites of about 10$\mu\textrm{m}$ in size and preserved the appearance of a fiber. In addition, the SiC/C fiber composites had carbon fibers coated with a dense layer consisted of SiC particles of sizes smaller than 1$\mu\textrm{m}$. The physical and mechanical properties of SiC/C fiber composites were discussed in terms of infiltrated pore volume fraction of carbon preform occupied by liquid silicon at the beginning of reaction. Lower bending strength of the SiC/C fiber composites which had a heterogeneous structure in nature, was attributed to the disruption of geometric configuration of the original carbon fiber preform and the formation of the fibrous aggregates of the loosely bonded coarse SiC particles produced by solution-precipitation mechanism.

• 한국세라믹학회지
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• 제43권9호
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• pp.552-557
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• 2006

A low temperature processing route for fabricating porous SiC ceramics by carbothermal reduction has been demonstrated. Effects of expandable microsphere content, sintering temperature, filler content, and carbon source on microstructure, porosity, compressive strength, cell size, and cell density were investigated in the processing of porous silicon carbide ceramics using expandable microspheres as a pore former. A higher microsphere content led to a higher porosity and a higher cell density. A higher sintering temperature resulted in a decreased porosity because of an enhanced densification. The addition of inert filler increased the porosity, but decreased the cell density. The compressive strength of the porous ceramics decreased with increasing the porosity. Typical compressive strength of porous SiC ceramics with ${\sim}70%$ porosity was ${\sim}13 MPa$.