1 |
S. Prochazka, "The Role of Boron and Carbon in the Sintering of Silicon Carbide," pp. 171-81 in Special Ceramics, Vol. 6, Ed. by P. Popper and F. Fiee, British Ceramics Research Association, Stoke-on-Trent, 1975.
|
2 |
Y. W. Kim and J. G. Lee, "Reactive Sintering of SiC (in Korean)," J. Kor. Ceram. Soc., 20 [2] 115-22 (1983).
과학기술학회마을
|
3 |
S. S. Whang, S. W. Park, H. H. Han, K. S. Han, and C. M. Kim, "Mechanical Properties of Porous Reaction Bonded Silicon Carbide (in Korean)," J. Kor. Ceram. Soc., 39 [10] 948-54 (2002).
과학기술학회마을
DOI
ScienceOn
|
4 |
M. Wu, T. Fujiju, and G. L. Messing, "Synthesis of Celluar lnorganic Materials by Foaming Sol-Gels," J. Non-Cryst. Solids, 121 407-12 (1990).
DOI
ScienceOn
|
5 |
F. F. Lange and K. T. Miller, "Open-Cell, Low-Density Ceramics Fabricated from Reticulated Polymer Substrates," Adv. Ceram. Mater., 2 [4] 827-31(1987).
DOI
|
6 |
L. N. Satapathy, P. D. Ramesh, D. Agrawal, and R. Roy, "Microwave Synthesis of Phase-Pure, Fine Silicon Carbide Powder," Mater. Res. Bull., 40 [10] 1871-82 (2005).
DOI
ScienceOn
|
7 |
D. H. Lee, J. C. Kim, and D. J. Kim, "Porous Silicon Carbide Ceramics from Silicon and Carbon Mixture," J. Ceram. Proc. Res., 14 [3] 322-26 (2013).
|
8 |
S. Sugiyama and M. Togaya, "Phase Relationship between 3C-and 6H-Silicon Carbide at High Pressure and High Temperature," J. Am. Ceram. Soc., 84 [12] 3013-16 (2001).
DOI
ScienceOn
|
9 |
L. Stobierski and A. Gubernat, "Sintering of Silicon Carbide I. Effect of Carbon," Ceram. Int., 29 [3] 287-92 (2003).
DOI
ScienceOn
|
10 |
S. K. Lilov, "Thermodynamic Analysis of Phase Transformations at the Dissociative Evaporation of Silicon Carbide Polytypes," Diamond Relat. Mater., 4 [12] 1331-34 (1995).
DOI
ScienceOn
|
11 |
S. C. Singhal, "Thermodynamic Analysis of the High-Temperature Stability of Silicon Nitride and Silicon Carbide," Ceram. Int., 2 [3] 123-30 (1976).
DOI
|
12 |
S. -J. L. Kang, Sintering Densification, Grain Growth & Microstructure; Vol. 1, pp. 48-9, Elsevier Butterworth-Heineman, Oxford, 2005.
|
13 |
K. Kakimoto, B. Gao, T. Shiramomo, and S. Nakano, and S. Nishizawa, "Thermodynamic Analysis of SiC Polytype Growth by Physical Vapor Transport Method," J. Cryst. Growth., 324 [1] 78-81 (2011).
DOI
ScienceOn
|
14 |
S. K. Lilov, "Study of the Equilibrium Processes in the Gas Phase during Silicon Carbide Sublimation," Mater. Sci. Eng. B., 21 [1] 65-69 (1993).
DOI
ScienceOn
|
15 |
G. H. Wroblewska, E. Nold, and F. Thummer, "The Role of Boron and Carbon Additions on The Microstructural Development of Pressureless Sintered Silicon Carbide," Ceram. Int., 16 [4] 201-09 (1990).
DOI
ScienceOn
|
16 |
S. Prochazka and R. M. Scanlan, "Effect of Boron Carbon on the Sintering of SiC," J. Am. Ceram. Soc., 58 [1-2] 72 (1975).
DOI
|
17 |
Y. A. Vodakov and E. N. Mokhov, "Diffusion and Solubility of Impurities in Silicon Carbide," pp. 508-19 in Silicon Carbide, Vol. 3, Ed. by R. C. Marshall, J. W. Faust, and C. E. Ryan, Univ. of South Carolina Press, Columbia.S.C, 1973.
|
18 |
P. A. K. -D. Coppi and W. Richarz, "Phase Transformation and Grain Growth in Silicon Carbide Powders," Int. J. High Technol. Ceram., 2 [2] 99-113 (1986).
DOI
ScienceOn
|