• Title/Summary/Keyword: Porous alumina

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Stability of a Silica Membrane in the HI-$H_2O$ Gaseous Mixture (HI-$H_2O$ 기상 혼합물에서 Silica 막의 안정성)

  • HWANG Gab-Jin;PARK Chu-Sik;LEE Sang-Ho;Choi Ho-Sang
    • Membrane Journal
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    • v.14 no.3
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    • pp.201-206
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    • 2004
  • The stability of the prepared silica membrane by chemical vapor deposition (CVD) method in the HI-$H_2O$ gaseous mixture was evaluated aiming at the application for hydrogen iodide decomposition in the thermochemical IS process. Porous $\alpha$-alumina having pore size of 100 nm was modified by the different CVD temperature using tetraethoxysilane as the Si source. The CVD temperature was $700^{\circ}C$, $650^{\circ}C$, and $600^{\circ}C$. The $H_2$/H$_2$ selectivities of the modified membranes which were measured by single-component permeation experiment showed 43.2, 12.6, and 8.7 at $600^{\circ}C$ for the M1 (CVD temperature was $700^{\circ}C$), M2 (CVD temperature was $650^{\circ}C$) and M3 membranes (CVD temperature was $600^{\circ}C$), respectively. Stability experiment in the HI-$H_2O$ gaseous mixture was carried out at $450^{\circ}C$. The prepared silica membrane at $600^{\circ}C$ of CVD temperature was more stable than that at the other CVD temperature.

Effect of Seed Coating Layer on the Microstructure of NaA Zeolite Separation Layer Grown on ${\alpha}$-alumina Support (종결정 코팅층이 다공성 ${\alpha}$-알루미나 지지체 표면에 성장되는 NaA 제올라이트 분리층의 미세구조에 미치는 영향)

  • Kim, Min-Ji;Sharma, Pankaj;Han, Moon-Hee;Cho, Churl-Hee
    • Membrane Journal
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    • v.24 no.5
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    • pp.375-385
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    • 2014
  • NaA zeolite/${\alpha}$-alumina composite membranes were hydrothermally synthesized at $100^{\circ}C$ for 24 hr by using nanosize seed of 100 nm in diameter and an ${\alpha}$-alumina support of $0.1{\mu}m$ in pore diameter, and then effect of seed coating layer on the microstructure of NaA zeolite separation layer was systematically investigated. In cases when nanosize seed was coated with a monolayer, increment in seed coverage induced small grained and thick NaA zeolite separation layer. On the other hand, in case when nanosize seed was coated with a multilayer, much small grained and thick separation layer was formed. It was clear that an uniform monolayer seed coating is required to grow hydrothermally a thin and defect-free NaA zeolite separation layer. In the present study, it was clearly announced that seed coating layer is a key factor to determine the microstructure of NaA zeolite layer, secondary grown on a porous support.

Preparation of Silica Membrane by CVD of Phenyl-Substituted Methoxysilane and $CO_2$ Separation (페닐기로 치환된 Methoxysilane의 CVD에 의한 실리카 분리막의 제조 및 $CO_2$ 분리)

  • Kim, Seong-Su;Seo, Bong-Guk;Lee, Yun-Bok;Park, Hong-Chae;Kim, Tae-Ok
    • Korean Journal of Materials Research
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    • v.11 no.7
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    • pp.622-624
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    • 2001
  • The CVD film of methoxysilane derived from diphenyldimethoxysilane(DPDMS) was formed on the outer surface of a porous ${\alpha}-alumina$ support tube coated(via dipping-drying-calcining) with a boehmite sol(0.3 mol-Al/L). The resulting silica membrane($500^{\circ}C,\;P_{fe}\;=\;130\;Pa$) showed a permeance of $5.18{\times}10^{-8}\;mol\;{\cdot}\;m^{-2}{\cdot}s^{-1}{\cdot}Pa^{-1}\;for\;CO_2$ and a permselectivity of 13.35 for $CO_2/N_2\;at\;30^{\circ}C$.

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Atmospheric Micro Glow Plasma-jet Device (상압 마이크로 글로우 방전 분사 소자)

  • Kim, Kang-Il;Kim, Geun-Young;Hong, Yong-Cheol;Yang, Sang-Sik
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1533_1534
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    • 2009
  • This paper presents an atmospheric micro glow plasma-jet device. The device consists of four components; a thin Ni anode, a porous alumina insulater, a stainless steel cathode and an aluminum case. The Ni anode is fabricated using micromachining technology. The anode has 10 holes, of which the hole diameter and the depth are $250{\mu}m$ and $60{\mu}m$, respectively. The discharge test is performed in nitrogen gas at atmospheric pressure for 20 kHz AC bias. The breakdown voltage is 3.5 kV at gas flow rate of 4 L/min and the the plasma-jet is blown out to ambient at 5.5 kV. In order to verify the characteristics of plasma, the current and the voltage of device are measured. The maximum temperature of plasma is $37^{\circ}C$. The plasma is well generated and stable at high voltage.

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Detection of H2S Gas with CuO Nanowire Sensor (산화구리 나노선 센서의 황화수소 감지특성)

  • Lee, Dongsuk;Kim, Dojin;Kim, Hyojin
    • Korean Journal of Materials Research
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    • v.25 no.5
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    • pp.238-246
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    • 2015
  • $H_2S$ is a flammable toxic gas that can be produced in plants, mines, and industries and is especially fatal to human body. In this study, CuO nanowire structure with high porosity was fabricated by deposition of copper on highly porous singlewall carbon nanotube (SWCNT) template followed by oxidation. The SWCNT template was formed on alumina substrates by the arc-discharge method. The oxidation temperatures for Cu nanowires were varied from 400 to $800^{\circ}C$. The morphology and sensing properties of the CuO nanowire sensor were characterized by FESEM, Raman spectroscopy, XPS, XRD, and currentvoltage examination. The $H_2S$ gas sensing properties were carried out at different operating temperatures using dry air as the carrier gas. The CuO nanowire structure oxidized at $800^{\circ}C$ showed the highest response at the lowest operating temperature of $150^{\circ}C$. The optimum operating temperature was shifted to higher temperature to $300^{\circ}C$ as the oxidation temperature was lowered. The results were discussed based on the mechanisms of the reaction with ionosorbed oxygen and the CuS formation reaction on the surface.

Capacitance Properties of Nano-Structure Controlled Alumina on Polymer Substrate (폴리머 기판위에 형성된 나노구조제어 알루미나의 캐패시터 특성)

  • Jung, Seung-Won;Min, Hyung-Sub;Han, Jeong-Whan;Lee, Jeon-Kook
    • Korean Journal of Materials Research
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    • v.17 no.2
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    • pp.81-85
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    • 2007
  • Embedded capacitor technology can improve electrical perfomance and reduce assembly cost compared with traditional discrete capacitor technology. To improve the capacitance density of the $Al_2O_3$ based embedded capacitor on Cu cladded fiber reinforced plastics (FR-4), the specific surface area of the $Al_2O_3$ thin films was enlarged and their surface morphologies were controlled by anodization process parameters. From I-V characteristics, it was found that breakdown voltage and leakage current were 23 V and $1{\times}10^{-6}A/cm^2$ at 3.3 V, respectively. We have also measured C-V characteristics of $Pt/Al_2O_3/Al/Ti$ structure on CU/FR4. The capacitance density was $300nF/cm^2$ and the dielectric loss was 0.04. This nano-porous $Al_2O_3$ is a good material candidate for the embedded capacitor application for electronic products.

Reduction of floating Dross in the Zinc Bath (도금욕 부유드로스의 감소)

  • Chang, Seky
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 1999.05a
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    • pp.97-97
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    • 1999
  • Dross formation in the zinc bath is inevitable under any condition as long as coating process on steel strip continues. Thus, bath aluminum and temperature are precisely managed to suppress the increase of dross. Also, excessive dross for normal coating process is generally eliminated physically by bubbling and skimming. Total amount of dross in the bath can be sometimes high enough to cause coating defect. On the other hand, local concentration of dross can make coating defect even with satisfactory level of total amount of dross. Reduction of dross in the bath was attempted by using ceramic foam filter made of mainly alumina. Dross in molten zinc was almost reduced to the levels of solubility of iron and aluminum in molten zinc at $450~460^{\circ}C$. Their solubility levels were confirmed by thermodynamic calculations or DEAL program. Two kinds of filters were tested for dross reduction. One was #20 ppi, porous per inch, and the other #30 ppi filter. Both were effective in reducing the bath dross to the solubility levels at the static state. Bath iron was reduced by 24 wt% and 19 wt% with #20 filter, and by 35 wt% and 29 wt% with #30 filter for GI and GA pot, respectively. Also, ceramic foam filter did not make any harm to the zinc bath composition after filtering test.

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Fabrication of Anodic Aluminum Oxide on Si and Sapphire Substrate (실리콘 및 사파이어 기판을 이용한 알루미늄의 양극산화 공정에 관한 연구)

  • Kim Munja;Lee Jin-Seung;Yoo Ji-Beom
    • Korean Journal of Materials Research
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    • v.14 no.2
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    • pp.133-140
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    • 2004
  • We carried out anodic aluminum oxide (AAO) on a Si and a sapphire substrate. For anodic oxidation of Al two types of specimens prepared were Al(0.5 $\mu\textrm{m}$)!Si and Al(0.5 $\mu\textrm{m}$)/Ti(0.1 $\mu\textrm{m}$)$SiO_2$(0.1 $\mu\textrm{m}$)/GaN(2 $\mu\textrm{m}$)/Sapphire. Surface morphology of Al film was analyzed depending on the deposition methods such as sputtering, thermal evaporation, and electron beam evaporation. Without conventional electron lithography, we obtained ordered nano-pattern of porous alumina by in- situ process. Electropolishing of Al layer was carried out to improve the surface morphology and evaluated. Two step anodizing was adopted for ordered regular array of AAO formation. The applied electric voltage was 40 V and oxalic acid was used as an electrolyte. The reference electrode was graphite. Through the optimization of process parameters such as electrolyte concentration, temperature, and process time, a regular array of AAO was formed on Si and sapphire substrate. In case of Si substrate the diameter of pore and distance between pores was 50 and 100 nm, respectively. In case of sapphire substrate, the diameter of pore and distance between pores was 40 and 80 nm, respectively

Fabrication of Long-range Ordered Porous Alumina Membranes with Various Voltages Applied for Hard Anodization (양극산화 인가전압에 따른 장범위 규칙 다공성 알루미나 멤브레인의 제조)

  • Jang, HyunChul;Choi, JungMi;An, KiTae;Lee, Naesung;Park, Yunsun;Sok, JungHyun
    • Korean Journal of Metals and Materials
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    • v.50 no.1
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    • pp.59-63
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    • 2012
  • Studying the long-range ordering of nanopores on the anodic aluminum oxide (AAO) membranes under a hard anodization (HA) approach is crucial in producing well-aligned nanopores on the AAO membranes. Electro-polishing in a mixture of ethanol and perchloric acid for 5 min removed marks formed by rolling and produced flat surfaces on aluminum substrates. The AAO was formed by the first HA process, providing seeds for the subsequent production of uniform AAO nanopores. The second HA process carried out on the seeds produced well-aligned, uniform AAO nanopores. The AAO nanopores, varying in size and shape, were observed with voltages applied for HA. This study provides a route for controlling the size and shape of AAO nanopores by changing the applied voltages.

The Formation of Anodic Oxide Film by Anodizing Voltage and Time of 6061 Aluminum Alloy (알루미늄 6061 합금의 양극 산화 인가 전압과 시간에 따른 표면의 산화피막층 형성 거동)

  • Park, Youngju;Jeong, Chanyoung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.34 no.1
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    • pp.68-72
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    • 2021
  • Aluminum is a lightweight metal and has excellent properties with regard to conductivity, workability, and strength. It has been used in various industries owing to its economic benefits. To improve upon the mechanical properties and processability by adding various alloying elements to aluminum, improving the corrosion resistance and heat resistance by electrochemically forming a porous anodic film having a thickness and hardness on the surface of the aluminum alloy is crucial. In this study, the aluminum 6061 alloy was controlled by an anodization process in a 0.3M oxalic acid electrolyte at room temperature to investigate the oxide film parameters such as porosity and thickness depending on the modulating applied voltage and time. The anodizing experiment was performed by increasing the time from 1 h to 9 h at 2-h intervals at applied voltages of 50 V and 60 V.