• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.124-124
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• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

• 한국세라믹학회지
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• 제41권7호
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• pp.503-507
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• 2004

The importance of porous ceramics has been increasingly recognized and adequate strength of porous ceramics is now required for structural applications. Porosities of porous ceramics act as flaws in inner volume and outer surface which result in severe strength degradation. The effect of pore structure, however, on strength and reliability of porous ceramics has not been clearly understood. We investigate the relationship between pore structure and mechanical properties using a sphere indentation on bilayer structure, porous ceramic top layer with soft polymer substrate. Porous alumina and silica were prepared to characterize the isolated pore structure and interconnected pore structure, respectively. The porous ceramic with 1mm thickness were bonded to soft polycarbonate substrate and then fracture strengths were estimated from critical loads for radial cracking of porous ceramics during sphere indentation from top surface. This simple and reproducible technique provides Weibull modulus of strength of porous ceramics with different pore structure. It shows that the porous ceramics with isolated pore structure have higher strength and higher Weibull modulus as well, than those with interconnected pore structure even with the same porosity.

• 한국자기학회지
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• 제20권5호
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• pp.191-195
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• 2010

두 차례에 걸친 양극 산화 과정 중 1차 양극 산화 시 성장한 초기 산화 피막의 제거와 2차 양극 산화 시간에 따른 다공성 알루미나 막의 성장에 대해 살펴보았다. 다공성 알루미나 막의 제작은 인산을 전해 용액으로 사용하여 두 차례의 양극산화 과정을 통해 이루어졌으며 초기 산화 피막의 제거가 2차 양극 산화 후 나타나는 알루미나 막 표면상의 기공구조형성에 미치는 영향과 함께 2차 양극 산화 시간에 따라 성장하는 알루미나 막의 두께 변화를 관찰하였다. 그 결과 1차 양극 산화 후 인산과 크롬산을 이용한 식각 과정에서 이루어진 산화 피막의 제거 정도에 따라 형성되는 다공 구조의 균일도가 향상됨을 관찰 할 수 있었다. 또한 2차 양극 산화 시간에 따라 산화 막의 두께가 선형적으로 증가함을 알 수 있었다. 본 연구를 통해 인산용액을 전해액으로 사용하였을 경우 150 V의 양극 산화 전압 하에서 다공성 알루미나 막의 성장률은 22.5 nm/min임을 확인 할 수 있었다.

• 센서학회지
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• 제15권3호
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• pp.205-210
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• 2006

Hydrophobic polymer [ex. Poly(vinylidenfluoride)] layer was coated on polyaniline (PANi) sensor to reduce the contamination humidity. The differences in sensitivity to methanol gas detection in various humidity condition between pure-PANi sensor and sensor coated with poly(vinylidenfluoride) polymer (PVDF) (coated-PANi sensor) were investigated. Considering the relation between the density of pore, which was coated on the layer of the PANi sensor, and sensitivity was investigated. To fabricate the porous PVDF layer on PANi sensor, poly(vinylalcohol) (PVA), which is water-soluble polymer, was used. Coated-PANi sensor was less affected by humidity compared with pure-PANi sensor. And higher density of pore on PVDF layer led to higher sensitivity.

• 한국재료학회지
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• 제29권10호
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• pp.623-630
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• 2019

Because of their excellent stability and highly specific surface area, carbon based materials have received attention as electrode materials of electrical double-layer capacitors(EDLCs). Biomass based carbon materials have been studied for electrode materials of EDLCs; these materials have low capacitance and high-rate performance. We fabricated tofu based porous activated carbon by polymer dissolution reaction and KOH activation. The activated porous carbon(APC-15), which has an optimum condition of 15 wt%, has a high specific surface area($1,296.1m^2\;g^{-1}$), an increased average pore diameter(2.3194 nm), and a high mesopore distribution(32.4 %), as well as increased surface functional groups. In addition, APC has a high specific capacitance($195F\;g^{-1}$) at low current density of $0.1A\;g^{-1}$ and excellent specific capacitance($164F\;g^{-1}$) at high current density of $2.0A\;g^{-1}$. Due to the increased specific surface area, volume ratio of mesopores, and surface functional groups, the specific capacitance and high-rate performance increased. Consequently, the tofu based activated porous carbon can be proposed as an electrode material for high-performance EDLCs.

• 통합자연과학논문집
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• 제3권3호
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• pp.153-156
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• 2010

Oxidation behaviors of porous silicon were investigated by the measurement of area of $SiO_2$ vibrational peaks in FT-IR spectra during thermal oxidation of porous silicon at corresponding temperatures. Visible photoluminescent porous silicon samples were obtained from an electrochemical etch of n-type silicon of resistivity between 1-10 ${\Omega}/cm$. The etching solution was prepared by adding an equal volume of pure ethanol to an aqueous solution of HF. The porous silicon was illuminated with a 300 W tungsten lamp for the duration of etch. Etching was carried out as a two-electrode galvanostatic procedure at applied current density of 200 $mA/cm^2$ for 5 min. The porosity of samples prepared was about 80%. After formation of porous silicon, the samples were thermally oxidized at $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, and $400^{\circ}C$, respectively. The growth rate of $SiO_2$ layer of porous silicon was investigated by using FT-IR spectroscopy. The effect of oxidation of porous silicon was presented.

• 대한기계학회논문집B
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• 제21권2호
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• pp.316-328
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• 1997

There were appreciable progresses on the study of shock wave / boundary layer interaction control in the transonic flow without nonequilibrium condensation. But in general, the actual flows associated with those of the airfoil of high speed flight body, the cascade of steam turbine and so on accompany the nonequilibrium condensation, and under a certain circumstance condensation shock wave occurs. Condensation shock wave / boundary layer interaction control is quite different from that of case without condensation, because the droplets generated by the result of nonequilibrium condensation may clog the holes of the porous wall for passive control and the flow interaction mechanism between the droplets and the porous system is concerned in the flow with nonequilibrium condensation. In these connections, it is necessary to study the condensation shock wave / boundary layer interaction control by passive cavity in the flow accompanying nonequilibrium condensation with condensation shock wave. In the present study, experiments were made on a roof mounted half circular arc in an indraft type supersonic wind tunnel to evaluate the effects of the porosity, the porous wall area and the depth of cavity on the pressure distribution around condensation shock wave. It was found that the porosity of 12% which was larger than the case of without nonequilibrium condensation produced the largest reduction of pressure fluctuations in the vicinity of condensation shock wave. The results also showed that wider porous area, deeper cavity for the same porosity of 12% are more favourable "passive" effect than the cases of its opposite. opposite.

• ETRI Journal
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• 제26권4호
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• pp.315-320
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• 2004

This paper proposes a 10-${\mu}m$ thick oxide layer structure that can be used as a substrate for RF circuits. The structure has been fabricated using an anodic reaction and complex oxidation, which is a combined process of low-temperature thermal oxidation (500 $^{\circ}C$ for 1 hr at $H_2O/O_2$) and a rapid thermal oxidation (RTO) process (1050 ${\circ}C$, for 1 min). The electrical characteristics of the oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current density through the OPSL of 10 ${\mu}m$ was about 10 to 50 $nA/cm^2$ in the range of 0 to 50 V. The average value of the breakdown field was about 3.9 MV/cm. From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL prepared by a complex process were confirmed to be completely oxidized. The role of the RTO process was also important for the densification of the porous silicon layer (PSL) oxidized at a lower temperature. The measured working frequency of the coplanar waveguide (CPW) type short stub on an OPSL prepared by the complex oxidation process was 27.5 GHz, and the return loss was 4.2 dB, similar to that of the CPW-type short stub on an OPSL prepared at a temperature of 1050 $^{\circ}C$ (1 hr at $H_2O/O_2$). Also, the measured working frequency of the CPW-type open stub on an OPSL prepared by the complex oxidation process was 30.5 GHz, and the return was 15 dB at midband, similar to that of the CPW-type open stub on an OPSL prepared at a temperature of $1050^{\circ}C$ (1 hr at $H_2O/O_2$).

• Bulletin of the Korean Chemical Society
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• 제35권12호
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• pp.3465-3474
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• 2014

Porous silica particles are the most prevailing raw material for stationary phases of liquid chromatography. During a long period of time, various methodologies for production of porous silica particles have been proposed, such as crashing and sieving of xerogel, traditional dry or wet process preparation of conventional spherical particles, preparation of hierarchical mesoporous particles by template-mediated pore formation, repeated formation of a thin layer of porous silica upon nonporous silica core (core-shell particles), and formation of specific silica monolith followed by grinding and calcination. Recent developments and applications of useful porous silica particles will be covered in this review. Discussion on sub-$3{\mu}m$ silica particles including nonporous silica particles, carbon or metal oxide clad silica particles, and molecularly imprinted silica particles, will also be included. Next, the individual preparation methods and their feasibilities will be collectively and critically compared and evaluated, being followed by conclusive remarks and future perspectives.

• 통합자연과학논문집
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• 제2권4호
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• pp.275-279
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• 2009

Recently, number of studies for porous silicon (PSi) have been investigated by many researchers. Multistructured porous silicon such as a distributed Bragg reflector (DBR) PSi, has been a topic of interest, because of its unique optical properties. DBR PSi were prepared by using an electrochemical etch of $P{^+}{^+}$-type silicon wafer with resistivity between 0.1 and $10m{\Omega}cm$. The electrochemical etch with square wave current density results in two different refractive indices in the porous layer. In this work, DBR porous silicon chips for a simple and portable organic vapor-sensing device have fabricated. The optical characteristics of DBR PSi have been investigated. DBR porous silicon have been characterized by FT-IR and Ocean optics 2000 spectrometer. The device used DBR PSi chip has been demonstrated as an excellent gas sensor, showing a great senstivity to organic vapor at room temperature.