• Current Photovoltaic Research
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• 제10권2호
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• pp.39-48
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• 2022

A Se-containing Cu/SnSe₂/ZnSe precursor was employed to introduce S to the precursor to form Cu₂ZnSn(S,Se)₄ (CZTSSe) film. The morphology of CZTSSe films strongly varied with two different pre-annealing environments: S and N₂. The CZTSSe film with S pre-annealing showed a dense morphology with a smooth surface, while that with N₂ pre-annealing showed a porous film with a plate-shaped grains on the surface. CuS and Cu₂Sn(S,Se)₃ phases formed during the S pre-annealing stage, while SnSe and Cu₂SnSe₃ phases formed during the N₂ pre-annealing stage. The SnSe phase formed during N₂ pre-annealing generated SnS₂ phase that had plate shape and severely aggravated the morphology of CZTSSe film. The power conversion efficiency of the CZTSSe solar cell with S pre-annealing was low (1.9%) due to existence of Zn(S.Se) layer between CZTSSe and Mo substrate. The results indicated that S pre-annealing of the precursor was a promising method to achieve a good morphology for large area application.

• Current Photovoltaic Research
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• 제8권2호
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• pp.45-49
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• 2020

Molybdenum (Mo) thin films are widely used as back contact in copper indium diselenide (CISe) solar cells. However, despite this, there are only few published studies on the properties of Mo and characteristics of CISe solar cells formed on such Mo substrates. In this studies, we investigated the properties of sputter deposited Mo bilayer, and fabricated non-vacuum CISe solar cells using bilayer Mo substrates. The changes in surface morphology and electrical resistivity were traced by varying the gas pressure during deposition of the bottom Mo layer. In porous surface structure, it was confirmed that the electrical resistivity of Mo bilayer was increased as the amount of oxygen bonded to the Mo atoms increased. The resulting solar cell characteristics vary as the bottom Mo layer deposition pressure, and the maximum solar cell efficiency was achieved when the bottom layer was deposited at 7 mTorr with a thickness of 100 nm and the top layer deposited at 3 mTorr with a thickness of 400 nm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.99.1-99.1
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• 2016

The materials for an electronic packaging provide diverse important functions including electrical contact to transfer signals from devices, isolation to protect from the environment and a path for heat conduction away from the devices. The packaging materials composed of metals, ceramics, polymers or combinations are crucial to the device operating properly and reliably. The demand of effective charge and heat transfer continuous to be challenge for the high-speed and high-power devices. Nanomaterials including graphene, carbon nanotube and boron nitride, have been designed for the purpose of exploiting the high thermal, electrical and mechanical properties by combining in the matrix of metal or polymer. In addition, considering the inherent electrical and surface properties of graphene, it is expected that graphene would be a good candidate for the surface layer of a template in the electroforming process. In this talk, I will present recent our on-going works in nanomaterials for microelectronic packaging: 1) porous graphene/Cu for heat dissipations, 2) carbon-metal composites for interconnects and 3) nanomaterials-epoxy composites as a thermal interface materials for electronic packaging.

• 전기화학회지
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• 제2권2호
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• pp.98-105
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• 1999

본 연구에서는 전기장에 의하여 유발되는 자연대류의 영향을 줄이기 위하여 수평 다공성 유체층에 열적 성충화를 유지하여 부력과 유체층의 안정화 효과를 체계적으로 조사하였다. 이를 위하여 수평 다공성 유체층에서 이중확산대류에 의한 물질전달 상관식을 이론적으로 유도하고, 전기화학 실험을 통하여 이론에 의한 모델을 보완하였다. 물질전달 상관식은 다공성 매질층에 대한 유동 방정식으로 Forchheimer모델을 사용하고 미세 난류 모델을 적용하여, 용질 및 열 Darcy-Rayleigh수와 Lewis 수로 유도하였다. 실험에서는 다공성매질에 포화된 황산구리황산용액내의 구리이온을 전기 화학적 방법을 통하여 확산 또는 자연대류에 의한 물질전달 실험을 수행하였다. 이론 및 실험적 해석 결과를 종합하면 다공성 매질 내에서 구리이온의 이중확산대류에 의한 물질전달 상관식은 다음과 같다. $$Sh=\frac{0.03054(Rs_D-LeRa_D)^{1/2}}{1-3.8788(Rs_D-LeRa_D)^{-1/10}}$$ 본 연구의 결과는 실험치와 잘 부합되었으며, 모델식의 원형은 열 및 물질전달계에서 자연대류의 영향을 효과적으로 제어할 수 있는 방안으로 활용될 수 있을 것이다.

• Transactions on Electrical and Electronic Materials
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• 제15권4호
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• pp.189-192
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• 2014

Yttria-stablized zirconia (YSZ) is the most commonly used electrolyte material, but the reduction in working temperature leads to insufficient ionic conductivity. Ceria based electrolytes (GDC) are more attractive in terms of conductivity at low temperature, but these materials are well known to be reducible at very low oxygen partial pressure. The reduction of electrolyte resistivity is necessary to overcome cell performance losses. So, thin YSZ/GDC bilayer technology seems suitable for decreasing the electrolyte resistance at lower operating temperatures. Bilayer electrolytes composed of a galdolinium-doped $CeO_2$ ($Ce_{0.9}Gd_{0.1}O_{1.95}$, GDC) layer and yttria-stabilized $ZrO_2$ (YSZ) layer with various thicknesses were deposited by RF sputtering and E-beam evaporation. The bilayer electrolytes were deposited between porous Ni-GDC anode and LSM cathode for anode-supported single cells. Thin film structure and surface morphology were investigated by X-ray diffraction (XRD), using $CuK{\alpha}$-radiation in the range of 2ce morphol$^{\circ}C$. The XRD patterns exhibit a well-formed cubic fluorite structure, and sharp lines of XRD peaks can be observed, which indicate a single solid solution. The morphology and size of the prepared particles were investigated by field-emission scanning electron microscopy (FE-SEM). The performance of the cells was evaluated over $500{\sim}800^{\circ}C$, using humidified hydrogen as fuel, and air as oxidant.

• 보존과학회지
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• 제27권1호
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• pp.1-11
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• 2011

강화도 능내리에서 출토된 고려시대 은제유물을 대상으로 성분조성과 경도, 조직특성을 연구하고 출토된 은제유물과 비슷한 성분비로 시편을 제작하여 가공방법과 온도에 따라 변하는 미세조직의 변화를 관찰하였다. 그 결과 능내리 출토 은제유물의 소지는 Cu가 2~6% 함유된 Ag-Cu 합금으로, Cu는 적절한 경도유지 등 특정 목정을 위하여 인위적으로 합금한 것으로 판단되며, 금으로 이루어진 도금층에서는 Hg가 약 11%의 함량으로 검출되어 아말감법으로 도금한 것으로 판단된다. 또한 일부 은제유물의 표면에서 확인되는 다공질 층은 실험시편 제작을 통한 확인결과 $400^{\circ}C$이상의 열이 가해질 때 생성되는 것으로, 능내리출토 은제유물들은 $400^{\circ}C$이상의 온도에서 열간가공하거나 열처리를 실시한 것으로 추정된다. 한편, 고부조로 타출된 은제유물 1점은 다른 은제유물과 비슷한 성분조성에도 불구하고 매우 낮은 경도를 보였는데, 이는 타출기법과 관계가 있는 것으로 추정된다.

• 한국주조공학회지
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• 제22권1호
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• pp.42-48
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• 2002

Effects of coating treatment of metallic Cu, Ni-P film on $SiC_p$, for $SiC_p$/iron aluminide composites were studied. Porous hybrid preforms were fabricated by reactive sintering after mixing the coated $SiC_p$, Fe and Al powders. Then the final composites were manufactured by squeeze casting after pouring AC4C Al alloy melts in preforms. The change of reactive temperature, density, microstructure of the preforms and microstructure of the composites were investigated. The exprimental results were summarized as follows. The thickness of Cu and Ni-P metallic layer formed on $SiC_p$ by electroless plating method were about $0.5{\mu}m$ and coated uniformly. There was no remakable change in the ignition temperature with variation of the mixing ratio of Fe and Al powder while in the case of coated $SiC_p$ it was lower about $20^{\circ}C$ than in the non-coated $SiC_p$. The maximum reaction temperature increased with increasing Al contents, but decreased with increasing $SiC_p$ contents. Expansion ratio of preform after reactive sintering increased with amount of Cu coated $SiC_p$. In the case of Fe-70at.%Al, the expansion ratio was about 7% up to 8wt.% of $SiC_p$, addition but further addition of $SiC_p$, increased the ratio significantly. And in the case of Fe-50 and 60at.%Al, it was about 20% up to 16wt.% of $SiC_p$ addition and about 28% in 24wt.% of $SiC_p$, addition. The microstructures of compounds showed that the grains became finer as amount of $SiC_p$, and mixing ratio of iron powder increased and the shape of compounds was changed gradually from irregular to spheroidal.

• 한국표면공학회지
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• 제41권1호
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• pp.16-22
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• 2008

Anodizing to form oxide layers on the pure titanium was performed in the electrolyte containing 1.5M $H_2SO_4$, 0.2M $H_3PO_4$, and 2.5wt.% $CuSO_4$ using the ac-biased arc anodizing technique. Titanium oxide layers anodized with different applied voltages, voltage-elevating rates, and anodizing times were investigated. In addition, thermal oxidation test under an atmospheric environment for the arc-anodized specimens was carried out. The thickness of oxide layers were not affected by the voltage-elevating rates, but increased slightly with the increase of anodizing times. The thickness of oxide layers were increased with the increase of voltages, and increased remarkably in the condition of 200V. The size and number of the pore observed in the center of the porous cell were decreased with increase of applied voltage. From the result of thermal oxidation test, it revealed that oxide layer formed by arc anodizing more effective to prevent oxidation of pure titanium.

• 한국재료학회지
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• 제20권11호
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• pp.600-605
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• 2010

In order to meet the requirements of faster speed and higher packing density for devices in the field of semiconductor manufacturing, the development of Cu/Low k device material is explored for use in multi-layer interconnection. SiOC(-H) thin films containing alkylgroup are considered the most promising among all the other low k candidate materials for Cu interconnection, which materials are intended to replace conventional Al wiring. Their promising character is due to their thermal and mechanical properties, which are superior to those of organic materials such as porous $SiO_2$, SiOF, polyimides, and poly (arylene ether). SiOC(-H) thin films containing alkylgroup are generally prepared by PECVD method using trimethoxysilane as precursor. Nano voids in the film originating from the sterichindrance of alkylgroup lower the dielectric constant of the film. In this study, methyltriphenylsilane containing bulky substitute was prepared and characterized by using NMR, single-crystal X-ray, GC-MS, GPC, FT-IR and TGA analyses. Solid-state NMR is utilized to investigate the insoluble samples and the chemical shift of $^{29}Si$. X-ray single crystal results confirm that methyltriphenylsilane is composed of one Si molecule, three phenyl rings and one methyl molecule. When methyltriphenylsilane decomposes, it produces radicals such as phenyl, diphenyl, phenylsilane, diphenylsilane, triphenylsilane, etc. From the analytical data, methyltriphenylsilane was found to be very efficient as a CVD or PECVD precursor.

• 마이크로전자및패키징학회지
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• 제20권4호
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• pp.13-16
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• 2013

양극산화(anodization)공정으로 제작된 규칙성 나노구조의 다공성 산화알루미늄(Aluminum Anodic Oxide, AAO)는 공정이 적용된 LED 모듈은 비교적 쉽고 경제적이므로 최근 LED용 방열소재로 응용하기 위하여 다양하게 연구가 진행되고 있다. 일반적으로 LED 모듈은 알루미늄/폴리머/구리 회로층으로 구성되며 절연체 역할을 하는 폴리머는 히트스프레더로 구성되어있다. 그러나 열전도도가 낮은 폴리머로 인하여 LED부품의 열 방출이 원활하지 못하므로 LED의 수명단축 및 오작동에 영향을 미친다. 따라서, 본 연구에서는 폴리머 대신 상대적으로 열전도도가 우수한 AAO를 양극산화 공정으로 제작하여 히트스프레더(heat spread)로 사용하였다. 이때, AAO와 금속인 구리 회로층간의 접착력을 향상시키기 위하여 스퍼터링 DBC(direct bonding copper)법으로 시드층(seed layer)을 형성한 뒤 최종적으로 전해도금공정으로 구리회로층을 형성하였다. 본 연구에서는 양극 산화공정으로 AAO와 금속간의 접착강도를 개선하여 1.18~1.45 kgf/cm와 같은 우수한 peel strength 값을 얻었다.