• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.7
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• pp.462-469
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• 1987

A metal gate MOSFET with source/drain regions self-aligned to gate region is proposed. The proposed MOS transistor is fabricated by utilizing the higher oxidation rate of source/drain regions with high doping concentration when compared with channel region with moderate doping. The thick oxide on the source/drain regions reduces the gate and drain(source) overlap capacitance down to that of a self-aligned polysilicon gate device while allowing the use of a metal gate with much lower resistivity than the more commonly used polycrystalline silicon. A ring oscillator composed of 15 inverter stages has been computer simulated using SPICE. The results of the simulation show good agreement with experimental measurement confirming the fast switching speed of propesed MOSFET.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.632-635
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• 2003

[ $(Ba,Sr,Ca)TiO_3$ ] powders, prepared by the sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. The dielectric properties were investigated for various composition ratio and $Nb_2O_5$ doping contents. All the BSCT thick films, sintered at $1420^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The Curie temperature and the relative dielectric constant decreased with increasing Ca content and $Nb_2O_5$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 1.0wt% $Nb_2O_5$ were 1410, 0.65% and 17.29% respectively.

• Journal of the Korean Ceramic Society
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• v.27 no.7
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• pp.841-850
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• 1990

The electrical conductivity of SrTiO3 thick films, which has been prepared by screen printing and sintering on polycrystalline Al2O3 substrates, was determined as a function of oxygen partial pressure and temperature. The data showed that electrical conductivity was proportional to the -1/4th power of the oxygen partial pressure for the oxygen partial pressure range from 10-4-10-8 to 10-20 atm and proportional to Po2+1/4 for the oxygen partial pressure range from 10-6-10-4 to 1atm. And then n-p transition region of electrical conductivity moved to lower oxygen partial pressure region as the sintering temperature of thick film specimens increased under about 140$0^{\circ}C$. These data were consistent with the presence of small amounts of acceptor impurities in SrTiO3 thick film which have been diffused from Al2O3 substrate in the range of solid solubility limit.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.343-346
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• 2010

We have investigated growth of CdTe thin films by using (As, GaAs) buffer layers for application of large scale IR focal plane arrays(IFPAs). Buffer layers were grown by molecular beam epitaxy(MBE), which reduced the lattice mismatch of CdTe/Si and prevented native oxide on Si substrates. CdTe thin films were grown by metal organic chemical deposition system(MOCVD). As a result, polycrystalline CdTe films were grown on Si(100) and arsenic coated-Si(100) substrate. In other case, single crystalline CdTe(400) thin film was grown on GaAs coated-Si(100) substrate. Moreover, we observed hillock structure and mirror like surface on the (400) orientated epitaxial CdTe thin film.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.489-490
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• 2008

As anodizing method using poly-Si (polycrystalline silicon) grown by LPCVD (Low Pressure Chemical Vapor Deposition), a ballistic electron emitter was made. An OPPS (Oxidized Porous Poly-Si) structure can generate ballistic electron which can pass through without scattering owing to electric field of oxide layer wrapped around nanocrystal due to applied voltage of between surface and bottom electrode. As electrode, (Al, Au and Pt/ti) were used. In this case, there were the better characteristics in Al and Pt/ti than in Al and Au.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.5
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• pp.618-622
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• 2011

Specialized large-scale computational finite-element and molecular dynamic models have been used in order to understand and predict how dislocation density emission and contact stress field due to nanoindentation affect inelastic deformation evolution scales that span the molecular to the continuum level in ductile crystalline systems. Dislocation density distributions and local stress fields have been obtained for different crystalline slip-system and grain-boundary orientations. The interrelated effects of grain-boundary interfaces and orientations, dislocation density evolution and crystalline structure on indentation inelastic regions have been investigated.

• Journal of Magnetics
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• v.9 no.2
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• pp.37-39
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• 2004

Polycrystalline Ni-Mn-Ga films have been deposited onto mica substrates held at 720 K by flash-evaporation method. At room temperature the films have a tetragonal structure with a = b = 0.598 and c = 0.576 nm typical for bulk $Ni_2MnGa$ below a martensitic transformation. Temperature measurements of ferromagnetic resonance reveal a martensitic phase transformation at 310 K. The transformation brings about a substantial decrease in the effective magnetization and a drastic increase in the ferromagnetic resonance linewidth due to a strong increase in the magnetic anisotropy in the martensitic phase.

• Progress in Superconductivity and Cryogenics
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• v.17 no.4
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• pp.8-11
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• 2015

We studied on the visible emission of Cu-ion-doped perovskite hafnate $SrHfO_3$ (SHO:Cu) with the photo-excitation energy dependence. The polycrystalline SHO:Cu samples were newly synthesized in the solid state reaction method. From the X-ray diffraction measurement it was found that the crystalline structure of SHO:Cu is nearly identical to that of undoped $SrHfO_3$. Interestingly, the photoluminescence excitation (PLE) spectra change significantly with the emission energy, which is linked to the strong dependence of the visible emission on the photo-excitation energy. This unusual emission behavior is likely to be associated with the mixed valence states of the doped Cu ions, which were revealed by X-ray photoelectron spectroscopy. We compared our finding of tunable visible emission in the SHO:Cu compounds with the cases of similar materials, $SrTiO_3$ and $SrZrO_3$ with Cu-ion-doping.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.84-89
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• 1992

The polycrystalline $CuInS_2$ thin films are prepared by vacuum heat treatment of layer, which is deposited by vaccum evaporation in order. The electrical and optical properties of the films are investigated at various sulfur deposition mole rate, substrate temperature, heat treatment temperature and time. From data, n type-$CuInS_2$ exhibits resistivity, transmittance and energy band gap with 142[${\Omega}{\cdot}cm$], 73[%], and 1.5[eV] respectively at optimum fabrication condition. Finally, the films are fabricated with chalcoprite structure.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.102-105
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• 2011

This work describes the characteristics of zinc oxide (ZnO) thin films formed on a polycrystalline (poly) 3C-SiC buffer layer using a sol-gel process. The deposited ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence (PL) spectra. ZnO thin films grown on the poly 3C-SiC buffer layer had a nanoparticle structure and porous film. The effects of post-annealing on ZnO film were also studied. The PL spectra at room temperature confirmed the crystal quality and optical properties of ZnO thin films formed on the 3C-SiC buffer layer were improved due to close lattice mismatch in the ZnO/3C-SiC interface.