Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Ballistic Electron Emitter using Nanocrystallized Poly-Si

Nanocrystallized Poly-Si을 이용한 Ballistic 전자 에미터

  • Choi, Yong-Woon (Quantum Optics Research Division, KAERI (Korea Atomic Energy Research Institute)) ;
  • Lee, Byung-Cheol (Quantum Optics Research Division, KAERI (Korea Atomic Energy Research Institute))
  • 최용운 (한국원자력연구원 양자광학연구부) ;
  • 이병철 (한국원자력연구원 양자광학연구부)
  • Published : 2008.06.18
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Abstract

As anodizing method using poly-Si (polycrystalline silicon) grown by LPCVD (Low Pressure Chemical Vapor Deposition), a ballistic electron emitter was made. An OPPS (Oxidized Porous Poly-Si) structure can generate ballistic electron which can pass through without scattering owing to electric field of oxide layer wrapped around nanocrystal due to applied voltage of between surface and bottom electrode. As electrode, (Al, Au and Pt/ti) were used. In this case, there were the better characteristics in Al and Pt/ti than in Al and Au.

Keywords