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http://dx.doi.org/10.4313/TEEM.2011.12.3.102

Characteristics of ZnO Films Deposited on Poly 3C-SiC Buffer Layer by Sol-Gel Method  

Phan, Duy-Thach (School of Electrical Engineering, University of Ulsan)
Chung, Gwiy-Sang (School of Electrical Engineering, University of Ulsan)
Publication Information
Transactions on Electrical and Electronic Materials / v.12, no.3, 2011 , pp. 102-105 More about this Journal
Abstract
This work describes the characteristics of zinc oxide (ZnO) thin films formed on a polycrystalline (poly) 3C-SiC buffer layer using a sol-gel process. The deposited ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence (PL) spectra. ZnO thin films grown on the poly 3C-SiC buffer layer had a nanoparticle structure and porous film. The effects of post-annealing on ZnO film were also studied. The PL spectra at room temperature confirmed the crystal quality and optical properties of ZnO thin films formed on the 3C-SiC buffer layer were improved due to close lattice mismatch in the ZnO/3C-SiC interface.
Keywords
Zinc oxide nanoparticles; 3C-SiC buffer layer; Sol-gel method;
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