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http://dx.doi.org/10.4313/JKEM.2010.23.4.343

Growth of Large Scale CdTe(400) Thin Films by MOCVD  

Kim, Kwang-Chon (한국과학기술연구원 재료연구본부 전자재료센터)
Jung, Kyoo-Ho (한국과학기술연구원 재료연구본부 전자재료센터)
You, Hyun-Woo (한국과학기술연구원 재료연구본부 전자재료센터)
Yim, Ju-Hyuk (한국과학기술연구원 재료연구본부 전자재료센터)
Kim, Hyun-Jae (연세대학교 전기전자공학부)
Kim, Jin-Sang (한국과학기술연구원 재료연구본부 전자재료센터)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.23, no.4, 2010 , pp. 343-346 More about this Journal
Abstract
We have investigated growth of CdTe thin films by using (As, GaAs) buffer layers for application of large scale IR focal plane arrays(IFPAs). Buffer layers were grown by molecular beam epitaxy(MBE), which reduced the lattice mismatch of CdTe/Si and prevented native oxide on Si substrates. CdTe thin films were grown by metal organic chemical deposition system(MOCVD). As a result, polycrystalline CdTe films were grown on Si(100) and arsenic coated-Si(100) substrate. In other case, single crystalline CdTe(400) thin film was grown on GaAs coated-Si(100) substrate. Moreover, we observed hillock structure and mirror like surface on the (400) orientated epitaxial CdTe thin film.
Keywords
MOCVD; CdTe thin film; Buffer layer;
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