• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1399-1401
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• 2001

We studied on structure and resistivity, temperature coefficient of resistance (TCR) of NiCr and NiCr-N thin resistor films prepared by do reactive magnetron sputtering of NiCr target. It is found that while pure NiCr films are polycrystalline, an addition of nitrogen (N2/(Ar+N2) ratios are between 10% and 70%) into the film is changed into amorphous structure and sheet resistance of films is increased. Measurement temperatures of TCR are ratios of $5^{\circ}C$ per 15min from $25^{\circ}C$ to $130^{\circ}C$. TCR for an as-deposited NiCr-N thin film is varied from positive to negative.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.371-374
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• 2002

Bismuth lanthanum titanate thin films with excess Bi contents were prepared onto Pt/Ti/$SiO_2$/Si substrate by metalorganic decomposition (MOD) technique. The structure and morphology of the films were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. From the XRD analysis, BLT thin films show polycrystalline structure and the layered-perovskite phase was obtained over 10% excess of Bi contents. As a result of ferroelectric characteristics related to the Bi content of the BLT thin film, the remanent polarization and dielectric constant decreased with increasing over Bi content of 10 % excess. The BLT film with Bi content of 10% excess was measured to have a dielectric constant of n9 and dielectric loss of 1.85[%]. The BLT thin films showed little polarization fatigue test up to 3.5 x $10^{9}$ bipolar switching cycling.

• Korean Journal of Materials Research
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• v.27 no.9
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• pp.484-488
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• 2017

In the present study, domain evolution processes of a near-morphotropic PZT ceramic during poling was studied using vertical piezoresponse force microscopy (PFM). To perform macroscopic poling in bulk polycrystalline PZT, poling was carried out in a stepwise fashion, and PFM scan was performed after unloading the electric field. To identify the crystallographic orientation and planes for the observed non-$180^{\circ}$ domain walls in the PFM images, compatibility theory and electron backscatter diffraction (EBSD) were used in conjunction with PFM. Accurate registration between PFM and the EBSD image quality map was carried out by mapping several grains on the sample surface. A herringbone-like domain pattern consisting of two sets of lamellae was observed; this structure evolved into a single set of lamellae during the stepwise poling process. The mechanism underlying the observed domain evolution process was interpreted as showing that the growth of lamellae is determined by the potential energy associated with polarization and an externally applied electric field.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1245-1246
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• 2006

Ferroelectric PZT (70/30) thick films were fabricated by the screen printing method. And the PZT (30/70) precusor solution were infiltrated by the spin-coating method on the PZT thick films to obtain a densification. All PZT thick films were sintered at $1050^{\circ}C$ for 10 min. Structural properties, such as crystalline structure, microstructures and compositional ratio, of PZT thick films were investigated with the variation of the number of sol coatings using XRD, SEM and EDS, respectively. All PZT thick films exhibited a perovskite polycrystalline structure without a pyrochloer phase. The thickness of PZT thick films, 4-times screen-printed, was approximately $60{\mu}m$. And the densification of the PZT thick films increased with increasing the number of sol coatings.

• Journal of the Korean Ceramic Society
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• v.33 no.9
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• pp.1045-1049
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• 1996

Pressureless-sintered polycrystalline alumina and carbon steel were joined with Ag-33.5Cu-1.5Ti (wt%) brazing alloy. SEM observation revealed that two reaction layers with different thicknesses were continuously formed between the alumina and the brazing alloy. A thick layer formed on the brazing alloy side was identified as Ti3(Cu0.93Al0.07)3O phase with diamond cubic structure. Another thin layer adjacent to the alumina was revealed as $\delta$-TiO phase of which the crystal structure was HCP with a lattice parameter of a0=0.419 nm and c0=0.284 nm. It was confirmed using XPS analysis that $\delta$-TiO was formed directly by a redox reaction of alumina with titanium ir, molten brazing alloy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.249-250
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• 2008

In this paper, we propose the single polycrystalline silicon flash EEPROM IC with a new structure which does not need the high voltage switching circuit. The design of high voltage switching circuits which are needed for the data program and erase, has been an obstacle to develop the single-poly EEPROM. Therefore, we has proposed the new cell structure which uses the low voltage switching circuits and has designed the full chip. A new single-poly EEPROM cell is designed and the full chip including the control block, the analog block, row decoder block, and the datapath block is designed. And the each block is verified by using the computer simulation. In addition, the full chip layout is performed.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.10
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• pp.475-480
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• 2006

Vanadium oxide thin films (VOx) have been deposited by RF magnetron sputtering from $V_2O_5$ target under different oxygen partial pressure ratios(0%, 10%) and substrate temperatures$(27^{\circ}C,\;400^{\circ}C)$. Crystallographic structure and morphology of the films are studied by XRD and SEM. Humidity-sensing properties of resistive sensors having interdigitated electrode structure are characterized through electrical conduction measurements. The films deposited at room temperature are amorphous whereas the ones deposited above foot are polycrystalline. The sensors show good response to humidity over 20%RH to 80%RH. Vanadium oxide thin films deposited with $0%O_2$ partial pressure at $400^{\circ}C$ exhibit greater sensitivity to humidity change than others.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.9
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• pp.29-35
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• 1992

Dielectric thin film of N/O (Si$_{3}N_[4}/SIO_{2}$) for high density stacked dynamic-RAM cell was formed by LPCVD and oxidation(Dry & pyrogenic oxidation methods) of the top Si$_{3}N_[4}$ film. The thickness, structure and composition of this film were measured by ellipsometer, high frequency C-V meter, high resolution TEM, AES, and SIMS. The thickness limit of Si$_{3}N_[4}$ film in making thin N/O structure layer was 7nm. In this experiment, the film with thinner than 7nm was not thick enough as oxygen diffusion barrier, and oxygen punched through the film and interfacial oxidation occurred at the phase boundary between Si$_{3}N_[4}$ and polycrystalline silicon electrode.

• Journal of Magnetics
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• v.20 no.2
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• pp.138-147
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• 2015

The unique nano-scale inter-lamellar microstructure and unparalleled heat treatment process give our developed metal powder composite its outstanding magnetic property for power inductor & motor applications. Compared to the conventional polycrystalline Fe or amorphous Fe-Cr-Si-B alloys, our unique designed inter-lamellar microstructure strongly decreases the intra-particle eddy current loss at high frequencies by blocking the mutual eddy currents. The combination of optimum permeability, magnetic flux and extremely low core loss makes this powder composite suitable for high frequency applications well above 10 MHz. Moreover, it can be also possible to SMC core for high speed motor applications in order to increase the motor efficiency by decreasing the core loss.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1705-1706
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• 2006

Ferroelectric PZT (70/30) thick films were fabricated by the screen printing method. And the PZT (30/70) precusor solution were infiltrated by the spin-coating method on the PZT thick films to obtain a densification. All PZT thick films were sintered at $1050^{\circ}C$ for 10 min. Structural properties, such as crystalline structure, microstructures and compositional ratio, of PZT thick films were investigated with the variation of the number of sol coatings using XRD, SEM and EDS, respectively. All PZT thick films exhibited a perovskite polycrystalline structure without a pyrochloer phase. The thickness of PZT thick films, 4-times screen-printed, was approximately $60{\mu}m$. And the densification of the PZT thick films increased with increasing the number of sol coatings.