• Journal of the Korean Ceramic Society
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• v.36 no.6
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• pp.604-610
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• 1999

Silicide layer structures and morphology degradation of the surface and interface of the silicide layers for he Co/refractory metal bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The CoSi-CoSi2 phase transition temperature is lower an morphology degradation of the silcide layer occurs more severely for the Co/refractorymetal bilayer on the P-doped polycrystalline Si substrate than on the single Si substrate. Also the final layer structure and the morphology of the films after silicidation annealing was found to depend strongly upon the interlayer metal. The layer structure after silicidation annealing of Co/Hf/doped-poly Si is Co-Hf alloy/polycrystalline CoSi2/poly Si substrate while that of Co/Nb is polycrystalline CoSi2/NbSi2/polycrystalline CoSi2/poly Si.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.92-92
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• 2008

The surface flatness of heteroepitaxially grown 3C-SiC thin films is a key factor affecting electronic and mechanical device applications. This paper describes the surface flatness of polycrystalline 3C-SiC thin films by the gas flow control according to the location change of geometric structure. The polycrystalline 3C-SiC thin film was deposited by APCVD(Atmospheric pressure chemical vapor deposition) at $1200^{\circ}C$ using HMDS(Hexamethyildisilane : $Si_2(CH_3)_6)$ as single precursor, and 5 slm Ar as the main flow gas. According to the location of geometric structure, surface fringes and flatness changed. It shows the distribution of thickness is formed uniformly in the specific location of the geometric structure.

• Journal of Industrial Technology
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• v.2
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• pp.13-19
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• 1982

Polycrystalline silicon layers have been deposited by a chemical vapor deposition technique using $SiCl_4$, $H_2$ gas mixture on single crystal silicon substrates. In this work, the effects of depostion temperature and total flow rate on the deposition rate of polycrystalline silicon are investigated. From the experimental results it was found that the formation reaction of polycrystalline silicon was limited by surface reaction and mass transfer controlled as the deposition temperature was increased. The morphology of polycrystalline silicon layer changed from a fine structure to a coarse one as the deposition temperature was increased.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.579-583
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• 1998

Silicide layer structures, agglomeration of silicide layers, and dopant redistributions for the Co/Ti bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The $CoSi_2$ phase transition temperature is higher and agglomeration of the silicide layer occurs more severely for the Co/Ti bilayer on the doped polycrystalline Si substrate than on the single Si substrate. Also, dopant loss by outdiffusion is much more significant on the doped polycrystalline Si substrate than on the single Si substrate. All of these differences are attributed to the grain boundary diffusion and heavier doping concentration in the polycrystalline Si. The layer structure after silicidation annealing of Co/ Tildoped - polycrystalline Si is polycrystalline CoSi,/polycrystalline Si, while that of Co/TiI( 100) Si is Co- Ti- Si/epi- CoSi,/(lOO) Si.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.615-621
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• 2016

SiC-polycrystalline fiber (Tyranno SA, Ube Industries, Ltd.) shows very high heat-resistance and excellent mechanical properties up to very high temperatures. However, further increase in the strength is required. Up to now, we have already clarified the relationship between the strength and the defect-size of the SiC-polycrystalline fiber. The defects are formed during the conversion process from the raw material (amorphous Si-Al-C-O fiber) into SiC-polycrystalline fiber. In this conversion process, a degradation of the Si-Al-C-O fiber and a subsequent sintering of the degraded fiber proceed as well, accompanied by a release of CO gas and compositional changes, to obtain the dense SiC-polycrystalline fiber. Since these changes proceed in each filament, the strict control should be needed to minimize residual defects on the surface and in the inside of each filament for achieving the higher strength. In this paper, the controlling factors of the fiber strength and the fine structure will appear.

• Journal of the Korean Ceramic Society
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• v.26 no.6
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• pp.795-801
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• 1989

The polycrystalline mullite fiber was synthesized from various combination of starting materials including metal alkoxides and colloidal sol by the sol-gel process. The best spinnability was observed in the sol which showed shear thinning and hysteresis (i.e., thixotropic flow), indicating that the network structure was broken down as the shear rate increased. The mullite fiber was polycrystalline after firing and characterized by thermal analysis, XRD, FT-IR spectroscopy, rheological measurements, and SEM.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1309-1310
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• 2006

High-purity and super-hard nano-polycrystalline diamond has been successfully synthesized by direct conversion from high-purity graphite under static pressures above 15 GPa and temperatures above $2300^{\circ}C$. This paper describes research findings on the formation mechanism of nano-structure and on the contributing factor leading to high hardness.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.249-252
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• 1997

Highly oriented ZnO thin films were fabricated by dip-coating technique using zinc acetate 2-methoxyethanol 2-aminoethanol solution as starting materials, and effects of substrates on the film's orientation were investigated. Product films were obtained by prefiring at 300, 400, 500 and 550℃ for 10 min, followed by final heat-treatment at the same temperatures as prefiring for 1h. c-axis oriented films on glass substrates were prepared by heat treatment of prefiring films at 300-550℃, while films on alumina showed polycrystalline structure. Films with c-axis orientation exhibited lower specific resistivities than those of polycrystalline films with partial crack and pore.

• Electrical & Electronic Materials
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• v.7 no.1
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• pp.49-56
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• 1994

Polycrystalline CdS thin films were deposited by using EBE method and its crystal structure, surface morphology, electrical and optical properties as a function of annealing temperature were investigated. It was found that optimum growth conditions were substrate temperature annealing temperature 300[.deg. C]. The films were hexagonal structure preferred(002) plane and maximum grain size was 421[.angs.]. As the results, resistivity and optical transmittance of CdS thin films were $8.3{\times}{10^3}$[.ohm.cm] and 89[%] respectively.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1292-1294
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• 1993

This paper proposes a new structure of polycrystalline silicon(poly-Si) thin film transistor(TFT) having a thick gate-oxide below the gate edge. The new structure is fabricated by the gate re-oxidation in wet ambient. It is shown that the thick gate-oxide below the gate edge is effective in reducing the leakage current and the gate-drain overlap capacitance. We have simulated this device by using the SSUPREM4 process simulator and the SPISCES-2B device simulator. As a simulation result it is found that the new structure provides a low tentage current less than 0.2 pA and achieves a on/off ratio as high as $5{\times}10^7$.